研究者詳細 - PRISTOVSEK Markus

The anisotropic hole transport along [0001] and [112¯0] in the p-doped (101¯0) GaN layer was compared for layers grown on bulk (101¯0) GaN substrates and on (101¯0) sapphire. The sheet resistance along [0001] was 1.1 times larger on GaN substrates and even 1.2 times larger on sapphire than that along [112¯0]. The anisotropic hole transport on bulk GaN substrates is due to the anisotropy of the hole’s effective mass and the different contribution of carriers in different bands, whereas the larger anisotropy for GaN on sapphire is also due to additional scattering at stacking faults. The annealing process of metal Mg applied to the m-plane p-type GaN successfully results in a robust p-type ohmic contact, functioning as a p++ layer.

DOI： 10.1063/5.0177681

Web of Science

Impact of graphene state on the orientation of III–nitride 査読有り国際共著

Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek

Applied Physics Letters 123 巻 ( 12 ) 頁： 121601 2023年9月

Growth of N-Polar (000-1) GaN in Metal-Organic Vapour Phase Epitaxy on Sapphire 招待有り査読有り国際共著

Crystals 13 巻 ( 7 ) 頁： 1072 2023年7月

Stress relaxation of AlGaN on nonpolar m-plane GaN substrate 査読有り国際共著

Lin Yingying, Sena Hadi, Frentrup Martin, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

133 巻 ( 22 ) 頁： 225702 2023年6月

Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs 査読有り国際共著国際誌

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kang Chang-Mo, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

LASER & PHOTONICS REVIEWS 2023年6月

Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs 国際共著

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Tanaka Atsushi, Furusawa Yuta, Han Dong-Pyo, Seong Tae-Yeon, Amano Hiroshi

ADVANCED OPTICAL MATERIALS 11 巻 ( 10 ) 頁： 2370029 2023年5月

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters 国際共著

Jmerik Valentin, Nechaev Dmitrii, Semenov Alexey, Evropeitsev Eugenii, Shubina Tatiana, Toropov Alexey, Yagovkina Maria, Alekseev Prokhor, Borodin Bogdan, Orekhova Kseniya, Kozlovsky Vladimir, Zverev Mikhail, Gamov Nikita, Wang Tao, Wang Xinqiang, Pristovsek Markus, Amano Hiroshi, Ivanov Sergey

NANOMATERIALS 13 巻 ( 6 ) 頁： 1077 2023年3月

Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 査読有り

Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

Japanese Journal of Applied Physics 62 巻 ( 2 ) 頁： 020902 2023年2月

Direct Determination of the Internal Quantum Efficiency of Light-Emitting Diodes 査読有り

Pristovsek Markus

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 17 巻 ( 1 ) 頁： 2200331 2023年1月

Wurtzite Al1-xGaxPyN1-y barrier layer growth for high electron mobility transistors 査読有り

Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 600 巻頁： 126908 2022年12月

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

Cai Wentao, Furusawa Yuta, Wang Jia, Park Jeong-Hwan, Liao Yaqiang, Cheong Hea-Jeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

APPLIED PHYSICS LETTERS 121 巻 ( 21 ) 2022年11月

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy 査読有り国際共著

Hu Nan, Avit Geoffrey, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS 121 巻 ( 8 ) 頁： 082106 2022年8月

Interplay of sidewall damage and light extraction efficiency of micro-LEDs

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kumabe Takeru, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

OPTICS LETTERS 47 巻 ( 9 ) 頁： 2250 - 2253 2022年5月

Defect characterization of (10-1-3) GaN by electron microscopy 査読有り国際共著国際誌

131 巻 ( 1 ) 2022年1月

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