論文 - PRISTOVSEK Markus
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Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) 査読有り
Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31 巻 ( 8 ) 2016年8月
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The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy 査読有り
Pristovsek Markus, Poser Florian, Richter Wolfgang
MATERIALS RESEARCH EXPRESS 3 巻 ( 7 ) 2016年7月
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Toward defect-free semi-polar GaN templates on pre-structured sapphire 査読有り
Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 5 ) 頁： 834-839 2016年5月
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Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes 査読有り
Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian
JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月
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MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN 査読有り
Dinh Duc V., Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 93-98 2016年1月
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Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire 査読有り
Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 61-66 2016年1月
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Development of semipolar (11-22) LEDs on GaN templates 査読有り
Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX 9768 巻 2016年
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Breakdown of the Green Gap in (0001) InGaN LEDs 査読有り
Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 頁： . 2016年
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Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes 査読有り
Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 117 巻 ( 19 ) 2015年5月
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Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon 査読有り
Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 5 ) 頁： 1104-1108 2015年5月
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Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire 査読有り
Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin
JOURNAL OF CRYSTAL GROWTH 415 巻 頁： 170-175 2015年4月
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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers 査読有り
Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.
APPLIED SURFACE SCIENCE 307 巻 頁： 461-467 2014年7月
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Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy 査読有り
Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.
JOURNAL OF APPLIED PHYSICS 114 巻 ( 17 ) 2013年11月
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Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy 査読有り
Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 376 巻 頁： 17-22 2013年8月
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Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy 査読有り
Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy 査読有り
Pristovsek Markus, Kadir Abdul, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Wavelength limits for InGaN quantum wells on GaN 査読有り
Pristovsek Markus
APPLIED PHYSICS LETTERS 102 巻 ( 24 ) 2013年6月
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Growth mode transition and relaxation of thin InGaN layers on GaN (0001) 査読有り
Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir
JOURNAL OF CRYSTAL GROWTH 372 巻 頁： 65-72 2013年6月
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Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) 査読有り
Pristovsek Markus, Kremzow Raimund, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 4 ) 2013年4月
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Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy 査読有り
Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 367 巻 頁： 42-47 2013年3月