研究者詳細 - PRISTOVSEK Markus

The anisotropic hole transport along [0001] and [112¯0] in the p-doped (101¯0) GaN layer was compared for layers grown on bulk (101¯0) GaN substrates and on (101¯0) sapphire. The sheet resistance along [0001] was 1.1 times larger on GaN substrates and even 1.2 times larger on sapphire than that along [112¯0]. The anisotropic hole transport on bulk GaN substrates is due to the anisotropy of the hole’s effective mass and the different contribution of carriers in different bands, whereas the larger anisotropy for GaN on sapphire is also due to additional scattering at stacking faults. The annealing process of metal Mg applied to the m-plane p-type GaN successfully results in a robust p-type ohmic contact, functioning as a p++ layer.

DOI： 10.1063/5.0177681

Web of Science

Impact of graphene state on the orientation of III–nitride 査読有り国際共著

Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek

Applied Physics Letters 123 巻 ( 12 ) 頁： 121601 2023年9月

Growth of N-Polar (000-1) GaN in Metal-Organic Vapour Phase Epitaxy on Sapphire 招待有り査読有り国際共著

Crystals 13 巻 ( 7 ) 頁： 1072 2023年7月

Stress relaxation of AlGaN on nonpolar m-plane GaN substrate 査読有り国際共著

Lin Yingying, Sena Hadi, Frentrup Martin, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

133 巻 ( 22 ) 頁： 225702 2023年6月

Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs 査読有り国際共著国際誌

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kang Chang-Mo, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

LASER & PHOTONICS REVIEWS 2023年6月

Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs 国際共著

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Tanaka Atsushi, Furusawa Yuta, Han Dong-Pyo, Seong Tae-Yeon, Amano Hiroshi

ADVANCED OPTICAL MATERIALS 11 巻 ( 10 ) 頁： 2370029 2023年5月

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters 国際共著

Jmerik Valentin, Nechaev Dmitrii, Semenov Alexey, Evropeitsev Eugenii, Shubina Tatiana, Toropov Alexey, Yagovkina Maria, Alekseev Prokhor, Borodin Bogdan, Orekhova Kseniya, Kozlovsky Vladimir, Zverev Mikhail, Gamov Nikita, Wang Tao, Wang Xinqiang, Pristovsek Markus, Amano Hiroshi, Ivanov Sergey

NANOMATERIALS 13 巻 ( 6 ) 頁： 1077 2023年3月

Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 査読有り

Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

Japanese Journal of Applied Physics 62 巻 ( 2 ) 頁： 020902 2023年2月

Direct Determination of the Internal Quantum Efficiency of Light-Emitting Diodes 査読有り

Pristovsek Markus

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 17 巻 ( 1 ) 頁： 2200331 2023年1月

Wurtzite Al1-xGaxPyN1-y barrier layer growth for high electron mobility transistors 査読有り

Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 600 巻頁： 126908 2022年12月

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

Cai Wentao, Furusawa Yuta, Wang Jia, Park Jeong-Hwan, Liao Yaqiang, Cheong Hea-Jeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

APPLIED PHYSICS LETTERS 121 巻 ( 21 ) 2022年11月

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy 査読有り国際共著

Hu Nan, Avit Geoffrey, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS 121 巻 ( 8 ) 頁： 082106 2022年8月

Interplay of sidewall damage and light extraction efficiency of micro-LEDs

Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kumabe Takeru, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

OPTICS LETTERS 47 巻 ( 9 ) 頁： 2250 - 2253 2022年5月

Defect characterization of (10-1-3) GaN by electron microscopy 査読有り国際共著国際誌

131 巻 ( 1 ) 2022年1月

X-ray characterisation of the basal stacking fault densities of (1122) GaN

Pristovsek Markus, Frentrup Martin, Zhu Tongtong, Kusch Gunnar, Humphreys Colin J.

CRYSTENGCOMM 23 巻 ( 35 ) 頁： 6059 - 6069 2021年9月

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov Valery, Roginskii Evgenii M., Kitaev Yuri, Smirnov Alexander, Eliseyev Ilya, Zavarin Eugene, Lundin Wsevolod, Nechaev Dmitrii, Jmerik Valentin, Smirnov Mikhail, Pristovsek Markus, Shubina Tatiana

NANOMATERIALS 11 巻 ( 9 ) 2021年9月

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Park Jeong-Hwan, Yang Xu, Lee Jun-Yeob, Park Mun-Do, Bae Si-Young, Pristovsek Markus, Amano Hiroshi, Lee Dong-Seon

CHEMICAL SCIENCE 12 巻 ( 22 ) 頁： 7713 - 7719 2021年6月

A debut for AlPN 招待有り

Markus Pristovsek

compound semiconductor 27 巻 ( 3 ) 頁： 40 - 43 2021年5月

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Avit Geoffrey, Robin Yoann, Liao Yaqiang, Nan Hu, Pristovsek Markus, Amano Hiroshi

SCIENTIFIC REPORTS 11 巻 ( 1 ) 2021年3月

Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001)

Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki

APPLIED PHYSICS EXPRESS 13 巻 ( 11 ) 2020年11月

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 11 ) 2020年11月

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 41 ) 頁： 46466 - 46475 2020年10月

Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

PHYSICAL REVIEW APPLIED 14 巻 ( 2 ) 2020年8月

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF MATERIALS CHEMISTRY C 8 巻 ( 25 ) 頁： 8668 - 8675 2020年7月

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 3 ) 2020年3月

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 2 ) 2020年2月

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS 7 巻 ( 1 ) 2020年1月

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34 巻 ( 12 ) 2019年12月

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SCIENTIFIC REPORTS 9 巻 2019年11月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 516 巻頁： 63 - 66 2019年6月

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 514 巻頁： 13 - 13 2019年5月

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 78 - 83 2019年4月

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 512 巻頁： 100 - 104 2019年4月

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50 - 53 2019年3月

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58 - 65 2019年2月

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 507 巻頁： 205 - 208 2019年2月

MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

Dinh Duc V., Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 502 巻頁： 14 - 18 2018年11月

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

JOURNAL OF APPLIED PHYSICS 124 巻 ( 18 ) 2018年11月

Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 21 ) 2018年11月

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 498 巻頁： 377 - 380 2018年9月

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 12 巻 ( 8 ) 2018年8月

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS 8 巻 ( 1 ) 2018年5月

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 11 巻 ( 5 ) 2018年5月

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy 査読有り

Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 482 巻頁： 1 - 8 2018年1月

Structural and optical properties of Gd implanted GaN with various crystallographic orientations 査読有り

A. Mackova, P. Malinsky, A. Jagerova, Z. Sofer, K. Klimova, D. Sedmidubsky, M. Pristovsek, M. Mikulics, J. Lorincik, R. Boettger, S. Akhmadaliev

THIN SOLID FILMS 638 巻頁： 63 - 72 2017年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation. (C) 2017 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.tsf.2017.07.036

Web of Science

Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy 査読有り

Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月

Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes 査読有り

Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

PHYSICAL REVIEW APPLIED 7 巻 ( 6 ) 2017年6月

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2017年

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures 査読有り

Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.

APPLIED PHYSICS LETTERS 109 巻 ( 15 ) 2016年10月

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence 査読有り

Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus

JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月

Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy 査読有り

Kaspari Christian, Pristovsek Markus, Richter Wolfgang

JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月

Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) 査読有り

Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31 巻 ( 8 ) 2016年8月

The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy 査読有り

Pristovsek Markus, Poser Florian, Richter Wolfgang

MATERIALS RESEARCH EXPRESS 3 巻 ( 7 ) 2016年7月

Toward defect-free semi-polar GaN templates on pre-structured sapphire 査読有り

Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 5 ) 頁： 834-839 2016年5月

Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes 査読有り

Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN 査読有り

Dinh Duc V., Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 93-98 2016年1月

Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire 査読有り

Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 61-66 2016年1月

Development of semipolar (11-22) LEDs on GaN templates 査読有り

Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX 9768 巻 2016年

Breakdown of the Green Gap in (0001) InGaN LEDs 査読有り

Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 頁： . 2016年

Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes 査読有り

Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael

JOURNAL OF APPLIED PHYSICS 117 巻 ( 19 ) 2015年5月

Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon 査読有り

Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 5 ) 頁： 1104-1108 2015年5月

Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire 査読有り

Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin

JOURNAL OF CRYSTAL GROWTH 415 巻頁： 170-175 2015年4月

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers 査読有り

Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.

APPLIED SURFACE SCIENCE 307 巻頁： 461-467 2014年7月

Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy 査読有り

Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.

JOURNAL OF APPLIED PHYSICS 114 巻 ( 17 ) 2013年11月

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy 査読有り

Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.

JOURNAL OF CRYSTAL GROWTH 376 巻頁： 17-22 2013年8月

Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy 査読有り

Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月

Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy 査読有り

Pristovsek Markus, Kadir Abdul, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月

Wavelength limits for InGaN quantum wells on GaN 査読有り

Pristovsek Markus

APPLIED PHYSICS LETTERS 102 巻 ( 24 ) 2013年6月

Growth mode transition and relaxation of thin InGaN layers on GaN (0001) 査読有り

Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir

JOURNAL OF CRYSTAL GROWTH 372 巻頁： 65-72 2013年6月

Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) 査読有り

Pristovsek Markus, Kremzow Raimund, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 4 ) 2013年4月

Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy 査読有り

Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.

JOURNAL OF CRYSTAL GROWTH 367 巻頁： 42-47 2013年3月

Interface and Surface Dielectric Anisotropies of GaP/Si(100) 査読有り

Supplie O., Hannappel T., Pristovsek M., Doescher H.

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 頁： 137-+ 2013年

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE 査読有り

Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 209 巻 ( 12 ) 頁： 2487-2491 2012年12月

Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN 査読有り

Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael

APPLIED PHYSICS LETTERS 101 巻 ( 20 ) 2012年11月

Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy 査読有り

Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 356 巻頁： 70-74 2012年10月

MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire 査読有り

Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.

JOURNAL OF CRYSTAL GROWTH 355 巻 ( 1 ) 頁： 59-62 2012年9月

In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces 査読有り

Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning

PHYSICAL REVIEW B 86 巻 ( 3 ) 2012年7月

Growth and characterizations of semipolar (11(2)over-bar2) InN 査読有り

Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.

JOURNAL OF APPLIED PHYSICS 112 巻 ( 1 ) 2012年7月

Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy 査読有り

Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael

JOURNAL OF APPLIED PHYSICS 111 巻 ( 3 ) 2012年2月

Comparison study of N- and In-polar {0001} InN layers grown by MOVPE 査読有り

Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 9 巻 ( 3-4 ) 頁： 977-981 2012年

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy 査読有り

Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 334 巻 ( 1 ) 頁： 40-45 2011年11月

Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy 査読有り

Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael

JOURNAL OF APPLIED PHYSICS 110 巻 ( 7 ) 2011年10月

Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy 査読有り

Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 331 巻 ( 1 ) 頁： 25-28 2011年9月

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy 査読有り

Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS 50 巻 ( 3 ) 2011年3月

Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire 査読有り

Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248 巻 ( 3 ) 頁： 583-587 2011年3月

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor 査読有り

Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.

JOURNAL OF CRYSTAL GROWTH 315 巻 ( 1 ) 頁： 229-232 2011年1月

Determination of the complex linear electro-optic coefficient of GaAs and InP 査読有り

Pristovsek Markus

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 巻 ( 8 ) 頁： 1974-1978 2010年8月

Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy 査読有り

Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 312 巻 ( 15 ) 頁： 2171-2174 2010年7月

Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source 査読有り

Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 312 巻 ( 12-13 ) 頁： 1983-1985 2010年6月

Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE 査読有り

Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 巻 ( 5-6 ) 頁： 127-129 2010年6月

Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy 査読有り

Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻頁： S574-S577 2009年

Growth mode of InGaN on GaN (0001) in MOVPE 査読有り

Pristovsek M., Stellmach J., Leyer M., Kneissl M.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻頁： S565-S569 2009年

Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE 査読有り

Meissner Christian, Ploch Simon, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻頁： S545-S548 2009年

Growth and characterization of manganese-doped InAsP 査読有り

Pristovsek M., Meissner Ch., Kneissl M., Jakomin R., Vantaggio S., Tarricone L.

JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 5028-5031 2008年11月

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy 査読有り

Kremzow Raimund, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4751-4753 2008年11月

The critical thickness of InGaN on (0001)GaN 査読有り

Leyer M., Stellmach J., Meissner Ch., Pristovsek M., Kneissl M.

JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4913-4915 2008年11月

Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy 査読有り

Meissner Christian, Ploch Simon, Leyer Martin, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4959-4962 2008年11月

Properties of InMnP (001) grown by MOVPE 査読有り

Pristovsek M., Philippou A., Raehmer B., Richter W.

JOURNAL OF CRYSTAL GROWTH 310 巻 ( 18 ) 頁： 4046-4049 2008年8月

In-Situ Monitoring for Nano-Structure Growth in MOVPE 査読有り

Pristovsek Markus, Richter Wolfgang

SEMICONDUCTOR NANOSTRUCTURES 頁： 67-86 2008年

Segregation and desorption of antimony in InP (001) in MOVPE 査読有り

Weeke S., Leyer M., Pristovsek M., Brunner F., Weyers M., Richter W.

JOURNAL OF CRYSTAL GROWTH 298 巻頁： 159-162 2007年1月

In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy 査読有り

Pristovsek M., Raehmer B., Breusig M., Kremzow R., Richter W.

JOURNAL OF CRYSTAL GROWTH 298 巻頁： 8-11 2007年1月

Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy 査読有り

Kaspari Christian, Pristovsek Markus, Richter Wolfgang

JOURNAL OF CRYSTAL GROWTH 298 巻頁： 46-49 2007年1月

In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy 査読有り

Raehmer Bert, Pristovsek Markus, Breusing Markus, Kremzow Raimund, Richter Wolfgang

APPLIED PHYSICS LETTERS 89 巻 ( 6 ) 2006年8月

InN growth on sapphire using different nitridation procedures 査読有り

Drago M, Werner C, Pristovsek M, Pohl UW, Pichter W

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 巻 ( 7 ) 頁： 1622-1625 2006年5月

Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry 査読有り

Drago M, Werner C, Pristovsek M, Pohl UW, Richter W

CRYSTAL RESEARCH AND TECHNOLOGY 40 巻 ( 10-11 ) 頁： 993-996 2005年11月

A fast reflectance anisotropy spectrometer for in situ growth monitoring 査読有り

Kaspari C, Pristovsek M, Richter W

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 242 巻 ( 13 ) 頁： 2561-2569 2005年11月

Growth of strained GaAsSb layers on GaAs(001) by MOVPE 査読有り

Pristovsek M, Zorn M, Zeimer U, Weyers M

JOURNAL OF CRYSTAL GROWTH 276 巻 ( 3-4 ) 頁： 347-353 2005年4月

InN growth and annealing investigations using in-situ spectroscopic ellipsometry 査読有り

Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W

JOURNAL OF CRYSTAL GROWTH 272 巻 ( 1-4 ) 頁： 87-93 2004年12月

Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE 査読有り

Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W

JOURNAL OF CRYSTAL GROWTH 272 巻 ( 1-4 ) 頁： 30-36 2004年12月

Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) 査読有り

Pulci O, Fleischer K, Pristovsek M, Tsukamoto S, Del Sole R, Richter W

JOURNAL OF PHYSICS-CONDENSED MATTER 16 巻 ( 39 ) 頁： S4367-S4374 2004年10月

In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy 査読有り

Pristovsek M, Tsukamoto S

JOURNAL OF CRYSTAL GROWTH 265 巻 ( 3-4 ) 頁： 425-433 2004年5月

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy 査読有り

Pristovsek M, Zorn M, Weyers M

JOURNAL OF CRYSTAL GROWTH 262 巻 ( 1-4 ) 頁： 78-83 2004年2月

Lateral short range ordering of step bunches in InGaAs/GaAs superlattices 査読有り

Hanke M, Schmidbauer M, Kohler R, Kirmse H, Pristovsek M

JOURNAL OF APPLIED PHYSICS 95 巻 ( 4 ) 頁： 1736-1739 2004年2月

Gallium-rich reconstructions on GaAs(001) 査読有り

Pristovsek M, Tsukamoto S, Ohtake A, Koguchi N, Orr BG, Schmidt WG, Bernholc J

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 240 巻 ( 1 ) 頁： 91-98 2003年11月

In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth 査読有り

Bell GR, Pristovsek M, Tsukamoto S, Orr BG, Arakawa Y, Koguchi N

SURFACE SCIENCE 544 巻 ( 2-3 ) 頁： 234-240 2003年10月

Structure of Ga-stabilized GaAs(001) surfaces at high temperatures 査読有り

Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N

APPLIED SURFACE SCIENCE 212 巻頁： 146-150 2003年5月

Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE 査読有り

Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N

JOURNAL OF CRYSTAL GROWTH 251 巻 ( 1-4 ) 頁： 46-50 2003年4月

Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties 査読有り

Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH 248 巻頁： 254-258 2003年2月

Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface 査読有り

Arisawa M, Tsukamoto S, Shimoda M, Pristovsek M, Nishida A

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 巻 ( 11A ) 頁： L1197-L1199 2002年11月

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures 査読有り

Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N, Ozeki M

PHYSICAL REVIEW B 65 巻 ( 23 ) 2002年6月

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE 査読有り

Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH 240 巻 ( 1-2 ) 頁： 87-97 2002年4月

In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy 査読有り

Pristovsek M, Tsukamoto S, Koguchi N, Han B, Haberland K, Zettler JT, Richter W, Zorn M, Weyers M

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 巻 ( 4 ) 頁： 1423-1429 2001年12月

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy 査読有り

Pristovsek M, Han B, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH 221 巻頁： 149-155 2000年12月

Surface structure of ordered InGaP(001): The (2x4) reconstruction 査読有り

Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

PHYSICAL REVIEW B 62 巻 ( 19 ) 頁： 12601-12604 2000年11月

Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth 査読有り

Pristovsek M, Menhal H, Zettler JT, Richter W

APPLIED SURFACE SCIENCE 166 巻 ( 1-4 ) 頁： 433-436 2000年10月

Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption 査読有り

Pristovsek M, Trepk T, Klein M, Zettler JT, Richter W

JOURNAL OF APPLIED PHYSICS 87 巻 ( 3 ) 頁： 1245-1250 2000年2月

Atomic structure and composition of the (2X4) reconstruction of InGaP(001) 査読有り

Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 巻 ( 4 ) 頁： 2210-2214 2000年

(2x4) GaP(001) surface: Atomic structure and optical anisotropy 査読有り

Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W

PHYSICAL REVIEW B 60 巻 ( 4 ) 頁： 2488-2494 1999年7月

GaP(001) and InP(001): Reflectance anisotropy and surface geometry 査読有り

Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17 巻 ( 4 ) 頁： 1691-1696 1999年

Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy 査読有り

Pristovsek M, Menhal H, Schmidtling T, Esser N, Richter W

MICROELECTRONICS JOURNAL 30 巻 ( 4-5 ) 頁： 449-453 1999年

Photoluminescence scanning near-field optical microscopy on III-V quantum dots 査読有り

Pahlke D, Poser F, Steimetz E, Pristovsek M, Esser N, Richter W

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 170 巻 ( 2 ) 頁： 401-410 1998年12月

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques 査読有り

Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M

JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 151-162 1998年12月

Reconstructions of the GaAs (1 1 3) surface 査読有り

Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K

JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 1-5 1998年12月

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere 査読有り

Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D

JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 211-216 1998年12月

Atomic structure of InP(001)-(2x4): A dimer reconstruction 査読有り

Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W

PHYSICAL REVIEW B 57 巻 ( 23 ) 頁： 14596-14599 1998年6月

Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry 査読有り

Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W

THIN SOLID FILMS 313 巻頁： 537-543 1998年2月

Ellipsometric and reflectance-anisotropy measurements on rotating samples 査読有り

Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W

THIN SOLID FILMS 313 巻頁： 620-624 1998年2月

Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing 査読有り

Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W

PHYSICAL REVIEW B 56 巻 ( 4 ) 頁： R1661-R1663 1997年7月

Optical anisotropies of InP(001) surfaces 査読有り

Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W

JOURNAL OF APPLIED PHYSICS 81 巻 ( 8 ) 頁： 3611-3615 1997年4月

In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers 査読有り

Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W

JOURNAL OF CRYSTAL GROWTH 170 巻 ( 1-4 ) 頁： 230-236 1997年1月

Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples 査読有り

Esser N, ReschEsser U, Pristovsek M, Richter W

PHYSICAL REVIEW B 53 巻 ( 20 ) 頁： 13257-13259 1996年5月

Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy 査読有り

Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M

SEMICONDUCTOR CHARACTERIZATION 頁： 537-543 1996年

Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) 査読有り

Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W

APPLIED PHYSICS LETTERS 67 巻 ( 25 ) 頁： 3783-3785 1995年12月

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) 査読有り

Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 35-47 1995年11月

Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy 査読有り

Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 49-59 1995年11月

SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) 査読有り

PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH

JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 44-52 1994年12月

EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY 査読有り

KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M

JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 36-43 1994年12月

　前のページ - 次のページ　

<PRISTOVSEK Markus>

論文 - PRISTOVSEK Markus