Presentations -
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Al 誘起成長Si 層の結晶方位・粒径に与える成長温度効果
沼田諒平，都甲薫，宇佐美徳隆，末益崇
第74回応用物理学会秋季学術講演会
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絶縁基板上における大粒径Ge(111)薄膜の極低温(200˚C)Al誘起成長
沼田諒平，都甲薫，大谷直生，宇佐美徳隆，末益崇
第74回応用物理学会秋季学術講演会
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導電膜/ガラス上における非晶質 Ge 薄膜の Al 誘起成長
中沢宏紀，都甲薫，宇佐美徳隆，末益崇
第74回応用物理学会秋季学術講演会
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Control of microstructures and reduction of stress in multicrystalline Si ingot grown by floating cast method using designed double crucibles
S.Joonwichien, S.Matsushima , I.Takahashi, N.Usami
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浮遊キャスト成長法により作製した大型インゴットの粒界性格と転位発生の関係
高橋勲，Supawan Joonwichien, 松島悟, 宇佐美徳隆
第74回応用物理学会秋季学術講演会
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機能性粒界を利用した70ｋｇモノライクSiインゴットの成長
沓掛 健太朗，宇佐美 徳隆，大野 裕，徳本 有紀，米永 一郎
第74回応用物理学会秋季学術講演会
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Control of grain boundaries and its impact on materials properties in International conference
N.Usami
10th Topical Workshop on Heterostructure Microelectronics
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次世代太陽電池創製に向けたマルチスケールシリコン系結晶
宇佐美 徳隆、太野垣 健、星 裕介、高橋 勲、Supawan Joonwichien
応用物理学会シリコンテクノロジー分科会研究集会 「最先端エネルギーナノデバイス」
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Fabrication of large-area photonic nanostructuers coupled with Ge quantum dots and their appilcation to solar cells International conference
Noritaka Usami, Yusuke Hoshi, Takanori Kiguchi, Kazufumi Ooi, and Takeshi
17th International Conference on Crystal Growth and Epitaxy ICCGE-17
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Mechanism of Strain Relaxation in BaSi2 Epitaxial Films on Si(111) Substrates during Post-Growth Annealing and Application for Film Exfoliation International conference
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, and T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Al-induced crystallized Si and Ge thin films on insulators as epitaxial seeds for silicide International conference
K.Toko, K.Nakazawa, R.Numata, N.Usami, T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates International conference
M.Baba, K.O.Hara, N.Saito, N.Yoshizawa, N.Usami, K.Toko, and T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy International conference
R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, and T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates International conference
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Investigation on the Surface Morphologies and Tunneling Properties of BaSi2/Si hetero-junction for BaSi2 International conference
W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization International conference
R.Numata, K.Toko, N.Usami, T.Suemasu
the Asia-Pacific Conference on Green Technology with Silicides and Related Materials2013
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Landau level crossing and anti-crossing in Ge/SiGe bilayer two-dimensional hole systems International conference
R.Moriya, Y.Hoshi, Y.Inoue, S.Masubuchi, K.Sawano, N.Usami, Y.Shiraki, T.Machida
Symposium on Quantum Hall Effects and Related Topics
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Grain boundary engineering for mono-like Si International conference
K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga
39th IEEE Photovoltaic Specialists Conference
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Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots International conference
T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami
39th IEEE Photovoltaic Specialists Conference
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Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications International conference
W.Hu, M.E.Syazwan, M.Igarashi, A.Higo, M.Y.Lee, Y.M.Li, N.Usami, and S. Samukawa
39th IEEE Photovoltaic Specialist Conference