Presentations -
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Controlling Impurity Distributions in Crystalline Si for Solar Cells by Using Artificial Designed Defects International conference
Y.Hayama, I.Takahashi, and N.Usami
ICCGE18
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Tuning the Aluminum-Induced Crystallization process to realize a poly-Si seed-layer suitable for epitaxy International conference
S.Tutashkonko, N.Usami
ICCGE18
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Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE International conference
K.Arimoto, S.Yagi, J.Yamanaka, K.Nakagawa, N.Usami, and K.Sawano
ICCGE18
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Growth of Si crystals from the crucible repelling Si melt by directional solidification International conference
R.Komatsu, T.Okubo, C.Mizuno, Y.Fujii, I.Takahashi, and N.Usami
ICCGE18
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Dependence of Grain Boundary Structure Controlled by Artificially Designed Seeds on Dislocation Generation International conference
T.Iwata, I.Takahashi, and N.Usami
ICCGE18
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells International conference
G.Anandha babu, I.Takahashi, T.Muramatsu, and N.Usami
ICCGE18
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モノライクインゴットの新規製造技術：SMART法
高橋勲、宇佐美徳隆
日本学術振興会「結晶加工と評価技術」第145委員会第149回研究会
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Investigation of p-type Emitter Layer Materials for Heterojunction Barium Silicide Thin Film Solar Cells International conference
K.Takahashi, Y.Nakagawa, K.O.Hara, Y.Kurokawa, and N.Usami
APAC Silicide 2016
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Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization International conference
J.A.Wibowo, I.Takahashi, K.O.Hara, and N.Usami
APAC Silicide 2016
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Investigation on Minority-carrier Lifetime and Solar Cell Properties of BaSi2 Formed on Multicrystalline Si Substrates International conference
Y.Li, C.T.Trinh, R. Takabe, K.Toko, N.Usami, and T.Suemasu
APAC Silicide 2016
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Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation International conference
K.O.Hara, C.T.Trinh, Y.Nakgawa, Y.Kurokawa, K.Arimoto, J.Yamanaka, K.Nakagawa, and N.Usami
APAC Silicide 2016
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Post -Annealing Effects on BaSi2 Evaporated Films Grown on Si Substrates International conference
T.Suhara, K.Murata, A.Navabi, K.O.Hara, Y.Nakagawa, C.T.Trinh, Y.Kurokawa, T.Suemasu, K.L.Wang, and N.Usami
APAC Silicide 2016
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Proposal of a Method to Realize BaSi2 Thin Films with Uniform Orientation using Reactivity of Excessive Ba in the Film and Si Substrate in Vacuum Evaporation International conference
Y.Nakagawa, C.T.Trinh, K.O.Hara, Y. Kurokawa, T. Suemasu and N.Usami
APAC Silicide 2016
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The Growth of Polycrystalline Orthorhombic BaSi2 on Ge Substrate by Vacuum Evaporation Method International conference
C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami
APAC Silicide 2016
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Photoresponse Properties of BaSi2 Film Grown on Si (100) by Vacuum Evaporation International conference
C.T.Trinh, Y.Nakagawa,and N.Usami
EUPVSEC
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Effects of Luminescent Coupling in Perovskite/c-Si Multijunction Solar Cells with Nanostructured Interlayer International conference
T.Tayagaki, Y.Kurokawa, and N.Usami
EUPVSEC
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Measurement of charge states in Si/SiGe multiple quantum dots International conference
T.Otsuka, K.Takeda, J.Yoneda, T.Honda, M.R.Delbecq, G.Allison, M.Marx, T.Nakajima, T.Kodera, S. Oda,Y.Hoshi, N.Usami, K.M. Itoh, and S.Tarucha
Silicon Quantum Electronics Workshop
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Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates International conference
Y.Arisawa, Y.Hoshi, K.Sawano , J.Yamanaka, K.Arimoto, C.Yamamoto, and N.Usami
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016)
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Application of New Doping Techniques to Solar Cells for Low Temperature Fabrication International conference
I.Takahashi, Y.Sujihara, H.Yating, J.Wibowo, Y.Kurokawa, and N.Usami
43rd IEEE
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Control of the Electrical Properties of BaSi2 Evaporated Films for Solar Cell Applications International conference
K.O.Hara, C.T. Trinh, K.Arimoto, J.Yamanaka, K.Nakagawa, Y.Kurokawa, T. Suemasu, and N.Usami
43rd IEEE