Presentations -
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting
Supawan Joonwichien
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Si/SiGe多重量子ドットの形成と電荷状態測定
大塚朋廣、武田健太、米田淳、本田拓夢、Matthieu Delbecq、Giles Allison、Marian Marx、中島峻、 小寺哲夫、小田俊理、星裕介、宇佐美徳隆、伊藤公平、樽茶清悟
日本物理学会秋季年会
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伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造の結晶成長中における表面形状形成過程に関する研究
山田崇峰、宇津山直人、佐藤圭、白倉麻衣、山本千綾、有元圭介、山中淳二、原康祐、宇佐美徳隆、澤野憲太郎、中川清和
第77回応用物理学会秋季学術講演会
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伸張歪みSi/SiGe/Si(110)ヘテロ構造の表面モフォロジーに成長速度が及ぼす影響
佐藤圭、宇津山直人、山田崇峰、有元圭介、山中淳二、原康祐、澤野憲太朗、宇佐美徳隆、中川清和
第77回応用物理学会秋季学術講演会
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イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価
村上太陽、有元圭介、山中淳二、原康祐、山本千綾、宇佐美徳隆、星裕介、有澤洋、澤野憲太郎、中川清和
第77回応用物理学会秋季学術講演会
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Silicon-based materials for heterojunction solar cells International conference
N.Usami
Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes
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Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells International conference
A.Hombe, Y.Kurokawa, and N.Usami
IEEE Nano2016
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique International conference
Y.Arisawa, K.Sawano, and N.Usami
ICCGE18
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On the growth mechanism of a muticrystalline silicon ingot with small grains by using single layer silicon beads International conference
T.Muramatsu, I.Takahashi, G.Anandha Babu, and N.Usami
ICCGE18
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Controlling Impurity Distributions in Crystalline Si for Solar Cells by Using Artificial Designed Defects International conference
Y.Hayama, I.Takahashi, and N.Usami
ICCGE18
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Tuning the Aluminum-Induced Crystallization process to realize a poly-Si seed-layer suitable for epitaxy International conference
S.Tutashkonko, N.Usami
ICCGE18
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Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE International conference
K.Arimoto, S.Yagi, J.Yamanaka, K.Nakagawa, N.Usami, and K.Sawano
ICCGE18
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Growth of Si crystals from the crucible repelling Si melt by directional solidification International conference
R.Komatsu, T.Okubo, C.Mizuno, Y.Fujii, I.Takahashi, and N.Usami
ICCGE18
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Dependence of Grain Boundary Structure Controlled by Artificially Designed Seeds on Dislocation Generation International conference
T.Iwata, I.Takahashi, and N.Usami
ICCGE18
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells International conference
G.Anandha babu, I.Takahashi, T.Muramatsu, and N.Usami
ICCGE18
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モノライクインゴットの新規製造技術：SMART法
高橋勲、宇佐美徳隆
日本学術振興会「結晶加工と評価技術」第145委員会第149回研究会
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Investigation of p-type Emitter Layer Materials for Heterojunction Barium Silicide Thin Film Solar Cells International conference
K.Takahashi, Y.Nakagawa, K.O.Hara, Y.Kurokawa, and N.Usami
APAC Silicide 2016
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Post -Annealing Effects on BaSi2 Evaporated Films Grown on Si Substrates International conference
T.Suhara, K.Murata, A.Navabi, K.O.Hara, Y.Nakagawa, C.T.Trinh, Y.Kurokawa, T.Suemasu, K.L.Wang, and N.Usami
APAC Silicide 2016
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Proposal of a Method to Realize BaSi2 Thin Films with Uniform Orientation using Reactivity of Excessive Ba in the Film and Si Substrate in Vacuum Evaporation International conference
Y.Nakagawa, C.T.Trinh, K.O.Hara, Y. Kurokawa, T. Suemasu and N.Usami
APAC Silicide 2016
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The Growth of Polycrystalline Orthorhombic BaSi2 on Ge Substrate by Vacuum Evaporation Method International conference
C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami
APAC Silicide 2016