Presentations -
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting
Supawan Joonwichien
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Si/SiGe多重量子ドットの形成と電荷状態測定
大塚朋廣、武田健太、米田淳、本田拓夢、Matthieu Delbecq、Giles Allison、Marian Marx、中島峻、 小寺哲夫、小田俊理、星裕介、宇佐美徳隆、伊藤公平、樽茶清悟
日本物理学会秋季年会
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伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造の結晶成長中における表面形状形成過程に関する研究
山田崇峰、宇津山直人、佐藤圭、白倉麻衣、山本千綾、有元圭介、山中淳二、原康祐、宇佐美徳隆、澤野憲太郎、中川清和
第77回応用物理学会秋季学術講演会
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伸張歪みSi/SiGe/Si(110)ヘテロ構造の表面モフォロジーに成長速度が及ぼす影響
佐藤圭、宇津山直人、山田崇峰、有元圭介、山中淳二、原康祐、澤野憲太朗、宇佐美徳隆、中川清和
第77回応用物理学会秋季学術講演会
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イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価
村上太陽、有元圭介、山中淳二、原康祐、山本千綾、宇佐美徳隆、星裕介、有澤洋、澤野憲太郎、中川清和
第77回応用物理学会秋季学術講演会
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Silicon-based materials for heterojunction solar cells International conference
N.Usami
Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes
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Novel light trapping structure by alkaline etching using a Ge dot mask for crystalline Si solar cells International conference
A.Hombe, Y.Kurokawa, and N.Usami
IEEE Nano2016
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique International conference
Y.Arisawa, K.Sawano, and N.Usami
ICCGE18
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On the growth mechanism of a muticrystalline silicon ingot with small grains by using single layer silicon beads International conference
T.Muramatsu, I.Takahashi, G.Anandha Babu, and N.Usami
ICCGE18
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Controlling Impurity Distributions in Crystalline Si for Solar Cells by Using Artificial Designed Defects International conference
Y.Hayama, I.Takahashi, and N.Usami
ICCGE18
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Tuning the Aluminum-Induced Crystallization process to realize a poly-Si seed-layer suitable for epitaxy International conference
S.Tutashkonko, N.Usami
ICCGE18
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Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE International conference
K.Arimoto, S.Yagi, J.Yamanaka, K.Nakagawa, N.Usami, and K.Sawano
ICCGE18
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Growth of Si crystals from the crucible repelling Si melt by directional solidification International conference
R.Komatsu, T.Okubo, C.Mizuno, Y.Fujii, I.Takahashi, and N.Usami
ICCGE18
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Dependence of Grain Boundary Structure Controlled by Artificially Designed Seeds on Dislocation Generation International conference
T.Iwata, I.Takahashi, and N.Usami
ICCGE18
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells International conference
G.Anandha babu, I.Takahashi, T.Muramatsu, and N.Usami
ICCGE18
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モノライクインゴットの新規製造技術：SMART法
高橋勲、宇佐美徳隆
日本学術振興会「結晶加工と評価技術」第145委員会第149回研究会
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Investigation of p-type Emitter Layer Materials for Heterojunction Barium Silicide Thin Film Solar Cells International conference
K.Takahashi, Y.Nakagawa, K.O.Hara, Y.Kurokawa, and N.Usami
APAC Silicide 2016
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Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization International conference
J.A.Wibowo, I.Takahashi, K.O.Hara, and N.Usami
APAC Silicide 2016
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Investigation on Minority-carrier Lifetime and Solar Cell Properties of BaSi2 Formed on Multicrystalline Si Substrates International conference
Y.Li, C.T.Trinh, R. Takabe, K.Toko, N.Usami, and T.Suemasu
APAC Silicide 2016
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Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation International conference
K.O.Hara, C.T.Trinh, Y.Nakgawa, Y.Kurokawa, K.Arimoto, J.Yamanaka, K.Nakagawa, and N.Usami
APAC Silicide 2016