Papers - KUROSAWA Masashi
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Au-catalyst induced low temperature (~250oC) layer exchange crystallization for SiGe on insulator Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
ECS Transactions page： Vol. 35, Issue 5, pp. 39-42 2011.5
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Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization Reviewed
M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 35, Issue 5, pp. 51-54 2011.5
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Low-temperature (~250oC) Cu-induced lateral crystallization of Ge on insulator Reviewed
T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao
Electrochemical and Solid-State Letters page： Vol. 17, Issue 7, pp. H274-H276 2011.4
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Au-induced low-temperature (~250oC) crystallization of Si on insulator through layer-exchange process Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Electrochemical and Solid-State Letters page： Vol. 14, Issue 6, pp. H232-H234 2011.3
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SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-on-Insulator Reviewed
T. Sadoh, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and M. Miyao
Key Engineering Materials page： Vol. 470, pp. 8-13 2011.2
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Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth Reviewed
M. Kurosawa, K. Toko, N. Kawabata, T. Sadoh, and M. Miyao
Solid State Electronics page： Volume 60, Issue 1, pp. 7–12 2011.2
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Dehydrogenation-enhanced large strain (~1.6%) in free-standing Si microstructures covered with SiN stress liners Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Electrochemical and Solid-State Letters page： Vol. 14, Issue 4, pp. H174-H176 2011.2
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Selective-mapping of uniaxial and biaxial strains in SOI micro-structures by polarized micro-probe Raman spectroscopy Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 98, Issue 1, pp. 012110-1－3 2011.1
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High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates Reviewed
M. Miyao, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and T. Sadoh
Proceeding of ICSICT2010 (IEEE) page： pp.827-830 2010.12
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Low-temperature (<250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Proceeding of TENCON2010 (IEEE) page： pp.2196-2198 2010.11
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(100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique Reviewed
K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao
Applied Physics Express page： Vol. 3, No. 7, pp. 075603-1－3 2010.6
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ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム
川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
電子情報通信学会 信学技報 page： Vol. 110, No. 15, pp. 13-17 2010.4
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Al-Induced Low-Temperature Crystallization of Si1-xGex (0<x<1) by Controlling Layer Exchange Process Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Thin Solid Films page： Vol. 518,Issue 6, Supplement 1, pp. S174-S178 2010.1
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Stress-enhancement in free-standing Si pillars through non-equilibrium dehydrogenation in SiN:H stress-liners by UV-light irradiation Reviewed
T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao
Applied Physics Letters page： Vol. 95, Issue 26, pp. 262103-1－3 2009.12
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Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 95, Issue 13, pp. 132103-1－3 2009.9
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アルミニウム誘起層交換法によるSiGe/ガラスの低温成長
黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
電子情報通信学会 信学技報 page： Vol. 109, No. 20, pp. 19-23 2009.4
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Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate Reviewed
M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
Japanese Journal of Applied Physics page： Vol. 48, No. 3, pp. 03B002-1－5 2009.3
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Ge Fraction Dependence of Al-induced Crystallization of SiGe at Low Temperatures Reviewed
M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
Journal of the Korean Physical Society page： Vol. 54, No. 1, pp. 451-454 2009.1
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Low-Temperature Oriented-Growth in [CoPt/MgO]n Multi-Layer Reviewed
T. Sadoh, M. Kurosawa, M. Kimura, K Ueda, M. Koyanagi, and M. Miyao
Thin Solid Films page： Vol. 517, Issue 1, pp. 430-433 2008.11