Papers - KUROSAWA Masashi
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics Reviewed
T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
ECS Transactions page： Vol. 58, Issue 9, pp. 213-221 2013.10
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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
Applied Physics Letters page： Vol. 103, Issue 11, pp. 101904-1〜4 2013.9
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Nucleation-controlled gold-induced crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250oC) Reviewed
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
Applied Physics Letters page： Vol. 103, Issue 8, pp. 082102-1〜4 2013.8
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates Reviewed
K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, T. Suemasu
Journal of Crystal Growth page： Vol. 372, pp. 189–192 2013.6
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High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Reviewed
Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 102, Issue 2, pp. 092102-1〜4 2013.3
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Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization Reviewed
M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao
ECS Journal of Solid State Science and Technology page： Vol. 2, Issue 3, pp. P54-P57 2012.12
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Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao
Applied Physics Letters page： Vol. 101, Issue 24, pp. 241904-1〜5 2012.12
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Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process Reviewed
R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 50, Issue 9, pp. 431-436 2012.10
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(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- Reviewed
M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
ECS Transactions page： Vol. 50, Issue 5, pp. 59-70 2012.10
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Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth Reviewed
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 50, Issue 9, pp. 747-751 2012.10
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Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature Poster Session Reviewed
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
ECS Transactions page： Vol. 50, Issue 9, pp. 475-480 2012.10
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Single-crystalline laterally-graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed
M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 101, Issue 9, pp. 091905-1〜4 2012.8
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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization Reviewed
K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu
Applied Physics Letters page： Vol. 101, Issue 7, pp. 072106-1〜3 2012.8
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Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0<x<1) Films on Insulating Substrates Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
ECS Journal of Solid State Science and Technology page： Vol. 1, Issue 3, pp. P144-P147 2012.8
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SiGeミキシング誘起溶融成長によるGOI（Ge on Insulator）の形成―人工単結晶への道― Invited Reviewed
宮尾正信，佐道泰造，都甲薫，黒澤昌志
応用物理 page： Vol. 81, No. 5, pp. 410-414 2012.5
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Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 100, Issue 17, pp. 172107-1〜5 2012.4
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界面酸化膜挿入型 Au 誘起層交換成長法による大粒径 Ge(111)/絶縁膜の低温成長-界面酸化膜厚依存性-
鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造
電子情報通信学会 信学技報 page： vol. 112, no. 18, pp. 71-73 2012.4
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絶縁膜上におけるGe(Si)薄膜の溶融成長 〜Si偏析効果による大粒径化〜
加藤立奨，黒澤昌志，横山裕之，佐道泰造，宮尾正信
電子情報通信学会 信学技報 page： vol. 112, no. 18, pp. 61-62 2012.4
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Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures Reviewed
T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao
Thin Solid Films page： Vol. 520, Issue 8, pp. 3276–3278 2012.2
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Low Temperature (~250oC) Layer Exchange Crystallization of Si1-xGex (x= 1-0) on Insulator for Advanced Flexible Devices Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Thin Solid Films page： Vol. 520, Issue 8, pp. 3293–3295 2012.2