Papers - KUROSAWA Masashi
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Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed
M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
Applied Physics Letters page: Vol. 106, Issue 17, pp. 171908-1〜5 2015.4
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高Sn組成SiSnの形成とバンド構造 〜直接遷移構造化を目指して〜
黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page: Vol. 115, No. 18, pp. 35-37 2015.4
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Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed
T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page: Vol. 54, Issue 4S, pp. 04DH08-1〜6 2015.2
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Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed
T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid State Electronics page: Vol. 110, pp. 54-58 2015.2
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Epitaxial growth and crystalline properties of Ge1-x-ySixSny layers on Ge(001) substrates Reviewed
T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid State Electronics page: Vol. 110, pp. 49-53 2015.2
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Sn/Ge コンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減
鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第20回研究会) page: pp. 59-62 2015.1
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Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS Reviewed
Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka
Applied Physics Express page: Vol. 7, No. 12, pp.121302-1〜4 2014.11
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Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Journal of Applied Physics page: Vol. 116, Issue17, pp.173510-1〜8 2014.11
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Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates Reviewed
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, S. Ike, M. Kurosawa, W. Takeuchi, and S. Zaima
ECS Transactions page: Vol. 64, Issue 6, pp. 793-799 2014.10
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Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減
鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明
電子情報通信学会 信学技報 page: vol. 114, no. 88, pp. 11-16 2014.6
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絶縁膜上における IV 族半導体の低温形成 〜低融点 Sn の活用〜
黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page: vol. 114, no. 88, pp. 91-95 2014.6
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Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator Reviewed
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
Thin Solid Films page: Vol. 557, pp. 125–128 2014.4
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Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization Reviewed
T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao
Thin Solid Films page: Vol. 557, pp. 135–138 2014.4
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Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films page: Vol. 557, pp. 159–163 2014.4
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Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Thin Solid Films page: Vol. 557, pp. 164–168 2014.4
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Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed
A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page: Vol. 53, Issue 4S, pp. 04EA06-1〜5 2014.3
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Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and melt-back-growth in solid-liquid coexisting region Reviewed
R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
Electrochemical and Solid-State Letters page: Vol. 3, Isuue 5, pp. P61-P64 2014.3
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Large grain growth of Ge-rich Ge1-xSnx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed
M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima
Applied Physics Letters page: Vol. 104, Issue 6, pp. 061901-1〜4 2014.2
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Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method Reviewed
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
ECS Transactions page: Vol. 58, Issue 9, pp. 185-192 2013.10
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Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi Reviewed
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
ECS Transactions page: Vol. 58, Issue 9, pp. 149-155 2013.10