Papers - KUROSAWA Masashi
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Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 oC and in-situ Sb doping Reviewed
S. Shibayama, K. Takagi, M. Sakshita, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing page： Vol. 176, pp. 108302-1〜8 2024.3
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Planar-type SiGe thermoelectric generator with double cavity structure Reviewed
S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura
Applied Physics Letters page： Vol. 124, Issue 12, pp. 123902-1〜6 2024.3
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Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films Reviewed
T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka
Materials Science in Semiconductor Processing page： Vol. 176, pp. 108304-1〜7 2024.3
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Effect of nanostructuring on thermoelectric performance of SiGe thin films Reviewed
S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura
Japanese Journal of Applied Physics page： Voi. 62, No. 9, pp. 095001-1〜4 2023.9
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Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence Reviewed
K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 62, No. 7, pp. 075506-1〜8 2023.7
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Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy Reviewed
K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
Applied Physics Express page： Vol. 16, No. 4, pp. 045501-1〜4 2023.4
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed
K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa
Materials Science in Semiconductor Processing page： Vol. 161, pp. 107462-1〜6 2023.3
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Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed
K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa
Japanese Journal of Applied Physics page： Vol. 62, No. SC, pp. SC1074-1〜8 2023.2
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Superior Power Generation Capacity of GeSn over Si Demonstrated in Cavity-free Thermoelectric Device Architecture Reviewed
M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
Japanese Journal of Applied Physics page： Vol. 62, No. SC, pp. SC1058-1〜6 2023.2
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Investigation of Band Structure in Strained Single Crystalline Si1-xSnx Reviewed
K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura
ECS Transactions page： Vol. 109, No. 4, pp. 359-366 2022.9
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Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001) Reviewed
M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1048-1〜6 2022.7
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High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride Reviewed
K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa
AIP Advances page： Vol. 12, Issue 5, pp.055318-1〜5 2022.5
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Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed
R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1086-1～6 2022.4
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Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed
M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa
Japanese Journal of Applied Physics page： Vol. 61, No. SC, pp. SC1048-1〜6 2022.2
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Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region Reviewed
Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori
Advanced Energy Materials page： Vol. 12, Issue 2, 2103191-1〜9 2021.11
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Thermoelectric properties of tin-incorporated group-IV thin films Reviewed
M. Kurosawa and O. Nakatsuka
ECS Transactions page： Vol. 104, No. 4, pp. 183-189 2021.10
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Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed
H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao
Applied Physics Letters page： Vol. 119, Issue 11, pp. 113903-1〜6 2021.9
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Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application Reviewed
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Transactions page： Vol. 102, No. 4, pp. 3-9 2021.5
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Close-spaced evaporation of CaGe2 films for scalable GeH film formation Reviewed
K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa
Materials Science in Semiconductor Processing page： Vol. 132, pp. 105928-1〜6 2021.5
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No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film Reviewed
Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao
Journal of Materiomics page： Vol. 7, Issue 4, pp. 665-671 2020.12
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Silicon‐based low-dimensional materials for Thermal Conductivity Suppression: Recent Advances and New Strategies to High Thermoelectric Efficiency Reviewed
H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao
Japanese Journal of Applied Physics page： Vol. 60, No. SA, pp. SA0803-1〜15 2020.10
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Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy Reviewed
R. Yokogawa, M. Kurosawa, and A. Ogura
ECS Transactions page： Vol. 98, No. 5, pp. 291-300 2020.9
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Hydrogen Desorption from Silicane and Germanane Crystals: Toward Creation of Free-Standing Monolayer Silicene and Germanene Reviewed
M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, and K. Shiraishi
Journal of Applied Physics page： Vol. 128, Issue 12, pp. 125301-1〜5 2020.9
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Reviewed
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Transactions page： Vol. 98, No. 5, pp. 149-156 2020.9
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Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed
Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao
Applied Physics Letters page： Vol. 117, Issue 5, pp. 053903-1〜5 2020.8
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Design of a Planar-type Uni-leg SiGe Thermoelectric Generator Reviewed
S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura
Japanese Journal of Applied Physics page： Vol. 59, No. 7, pp. 074003-1〜5 2020.7
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Continuous Growth of Germanene and Stanene Lateral Heterostructures Reviewed
T. Ogikubo, H. Shimazu, Y. Fujii, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, G. L. Lay, J. Yuhara
Advanced Materials Interfaces page： Vol. 7, No. 10, pp. 1902132-1〜7 2020.3
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Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed
H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa
Japanese Journal of Applied Physics page： Vol. 59, No. SG, pp. SGGF09-1〜6 2020.2
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Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface Reviewed
M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 59, No. SG, pp. SGGK15-1〜6 2020.2
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分子線エピタキシー法によるSi1-xSnx薄膜の形成
丹下龍志, 黒澤昌志, 中塚理
電子デバイス界面テクノロジー研究会（第25回） page： pp. 125-128 2020.1
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多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御
中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明
電子デバイス界面テクノロジー研究会（第25回） page： pp. 117-120 2020.1
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Semi-ballistic thermal conduction in polycrystalline SiGe nanowires Reviewed
N. Okamoto, R. Yanagisawa, A. Roman, Md. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura
Applied Physics Letters page： Vol.115, Issue 25, pp. 253101-1〜4 2019.12
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Reviewed
O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima
ECS Transactions page： Vol. 92, Issue 4, pp. 41-46 2019.10
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Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed
Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima
Scientific Reports page： Vol. 9, No.1, pp.14342-1〜9 2019.10
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ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性 Invited Reviewed
中塚理, 黒澤昌志
応用物理 page： Vol. 88, No. 9, pp. 597-603 2019.9
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Formation and Optoelectronic Property of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double Heterostructure on Boron-Ion-Implanted Ge(001) Substrate Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 58, No. SI, pp. SIIB23-1〜6 2019.7
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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
Applied Physics Express page： Vol. 12, No. 5, pp. 051016-1〜6 2019.5
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GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価
丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第24回） page： pp. 71-74 2019.1
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ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定
熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信
電子デバイス界面テクノロジー研究会（第24回） page： pp. 197-200 2019.1
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高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価
福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第24回） page： pp. 265-268 2019.1
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Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed
M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 58, No. SA, pp. SAAD02-1〜4 2018.11
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Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111) Reviewed
J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay
ACS Nano page： Vol. 12, Issue 11, pp. 11632-11637 2018.10
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Optoelectronic properties of High-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Semiconductor Science and Technology page： Vol. 33, No. 12, pp. 124018-1〜9 2018.10
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Ultra-thin Germanium-Tin on Insulator structure through the direct bonding technique Reviewed
T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida
Semiconductor Science and Technology page： Vol. 33, No. 12, pp. 124002-1〜5 2018.10
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Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth Reviewed
R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura
ECS Transactions page： Vol. 86, Issue 7, pp. 87-93 2018.9
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A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS Transactions page： Vol. 86, issue 7, pp. 321-328 2018.9
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エネルギーハーベスティング応用に向けたIV族混晶（Ge1-xSnx）薄膜の結晶成長 Invited Reviewed
黒澤昌志
日本熱電学会学会誌 page： Vol. 15, No.1, pp.26-31 2018.8
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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient Reviewed
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 57, No. 6S1, pp. 06HD08-1〜5 2018.5
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Segregated SiGe Ultrathin Layer Formation and Surface Planarization on Epitaxial Ag(111) by Annealing of Ag/SiGe(111) with Different Ge/(Si+Ge) Compositions Reviewed
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 57, No. 4S, pp. 04FJ05-1〜6 2018.3
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Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 57, No. 4S, pp. 04FJ02-1〜6 2018.2
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High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 112, Issue 6, pp. 062104-1〜5 2018.2
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Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed
M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 111, Issue 19, pp. 192106-1〜4 2017.11
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Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed
M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
Semiconductor Science and Technology page： Vol. 32, No. 10, pp. 104008-1〜8 2017.9
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First-principles study on adsorption structures and electronic states of stanene on α-alumina surface Reviewed
M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
Japanese Journal of Applied Physics page： Vol. 56, No. 9, pp. 095701-1〜4 2017.8
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Growth and Applications of Si1-xSnx Thin Films Reviewed
M. Kurosawa, O. Nakatsuka, and S. Zaima
ECS Transactions page： Vol. 80, Issue 4, pp. 253-258 2017.8
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エピタキシャルAg(111)上の極薄IV族結晶形成
伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一
電子情報通信学会 信学技報 page： Vol. 117, No. 101, pp. 43-48 2017.6
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Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed
Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 4S, pp.04CR10-1〜5 2017.3
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Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
Materials Science in Semiconductor Processing page： Vol. 70, pp. 151-155 2017.1
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水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化
高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第22回） page： pp. 67-70 2017.1
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Hydrogen-surfactant-mediated epitaxy of Ge1-x Snx layer and its effects on crystalline quality and photoluminescence property Reviewed
O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 1S, pp. 01AB05-1〜6 2016.12
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Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 1S, pp. 01AB02-1〜7 2016.11
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Large single-crystal Ge-on-insulator by thermally-assisted (~400C) Si-seeded-pulse-laser annealing Reviewed
T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao
Materials Science in Semiconductor Processing page： Vol. 70, pp. 8-11 2016.11
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Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed
M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
Materials Science in Semiconductor Processing page： Vol. 70, pp. 156-161 2016.10
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Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators Reviewed
M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima
ECS Transactions page： Vol. 75, Issue 8, pp. 481-487 2016.9
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金属誘起層交換法によるAg上Si, Ge極薄膜の形成 ーシリセン, ゲルマネンの創製を目指してー Invited Reviewed
黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明
表面科学 page： Vol. 37, No. 8, pp. 374-379 2016.8
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Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed
Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 8S2, pp. 08PE04-1〜4 2016.7
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Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process Reviewed
M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 8S1, pp. 08NB07-1〜5 2016.7
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Sn系IV族半導体混晶薄膜の成長と物性評価
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page： Vol. 116, No. 1, pp. 23-26 2016.4
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Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 4S, pp. 04EB12-1〜6 2016.3
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Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 4S, pp. 04EB13-1〜5 2016.3
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Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 108, Issue 5, pp. 052104-1〜4 2016.2
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界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回） page： pp. 21-24 2016.1
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Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析
長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回） page： pp. 17-20 2016.1
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Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators Reviewed
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Transaction of the Materials Research Society of Japan page： Vol. 40, No. 4, pp. 351-354 2015.12
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Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates Reviewed
S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films page： Vol. 598, 1 January 2016, pp. 72–81 2015.12
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Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Applied Physics Letters page： Vol. 107, Issue 21, pp. 212103-1〜5 2015.11
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Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Reviewed
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawaa, W. Takeuchi, M. Sakashita
ECS Transactions page： Vol. 69, Issue 10, pp. 89-98 2015.10
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High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed
W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 107, Issue 2, pp.022103-1〜4 2015.7
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Growth and Application of GeSn-Related Group-IV Semiconductor Materials Invited Reviewed
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita
Science and Technology of Advanced Materials page： Vol.16, Issue 4, pp. 043502-1〜22 2015.7
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Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed
S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Applied Physics Letters page： Vol. 106, Issue 18, pp. 182104-1〜5 2015.5
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Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed
M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 106, Issue 17, pp. 171908-1〜5 2015.4
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高Sn組成SiSnの形成とバンド構造 〜直接遷移構造化を目指して〜
黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page： Vol. 115, No. 18, pp. 35-37 2015.4
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Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed
T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 54, Issue 4S, pp. 04DH08-1〜6 2015.2
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Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed
T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid State Electronics page： Vol. 110, pp. 54-58 2015.2
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Epitaxial growth and crystalline properties of Ge1-x-ySixSny layers on Ge(001) substrates Reviewed
T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid State Electronics page： Vol. 110, pp. 49-53 2015.2
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Sn/Ge コンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減
鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会） page： pp. 59-62 2015.1
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Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS Reviewed
Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka
Applied Physics Express page： Vol. 7, No. 12, pp.121302-1〜4 2014.11
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Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Journal of Applied Physics page： Vol. 116, Issue17, pp.173510-1〜8 2014.11
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Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates Reviewed
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, S. Ike, M. Kurosawa, W. Takeuchi, and S. Zaima
ECS Transactions page： Vol. 64, Issue 6, pp. 793-799 2014.10
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Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減
鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明
電子情報通信学会 信学技報 page： vol. 114, no. 88, pp. 11-16 2014.6
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絶縁膜上における IV 族半導体の低温形成 〜低融点 Sn の活用〜
黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page： vol. 114, no. 88, pp. 91-95 2014.6
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Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator Reviewed
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
Thin Solid Films page： Vol. 557, pp. 125–128 2014.4
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Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization Reviewed
T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao
Thin Solid Films page： Vol. 557, pp. 135–138 2014.4
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Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films page： Vol. 557, pp. 159–163 2014.4
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Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Thin Solid Films page： Vol. 557, pp. 164–168 2014.4
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Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed
A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 53, Issue 4S, pp. 04EA06-1〜5 2014.3
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Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and melt-back-growth in solid-liquid coexisting region Reviewed
R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
Electrochemical and Solid-State Letters page： Vol. 3, Isuue 5, pp. P61-P64 2014.3
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Large grain growth of Ge-rich Ge1-xSnx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed
M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 104, Issue 6, pp. 061901-1〜4 2014.2
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Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method Reviewed
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
ECS Transactions page： Vol. 58, Issue 9, pp. 185-192 2013.10
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Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi Reviewed
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
ECS Transactions page： Vol. 58, Issue 9, pp. 149-155 2013.10
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics Reviewed
T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
ECS Transactions page： Vol. 58, Issue 9, pp. 213-221 2013.10
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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
Applied Physics Letters page： Vol. 103, Issue 11, pp. 101904-1〜4 2013.9
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Nucleation-controlled gold-induced crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250oC) Reviewed
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
Applied Physics Letters page： Vol. 103, Issue 8, pp. 082102-1〜4 2013.8
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates Reviewed
K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, T. Suemasu
Journal of Crystal Growth page： Vol. 372, pp. 189–192 2013.6
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High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Reviewed
Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 102, Issue 2, pp. 092102-1〜4 2013.3
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Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization Reviewed
M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao
ECS Journal of Solid State Science and Technology page： Vol. 2, Issue 3, pp. P54-P57 2012.12
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Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao
Applied Physics Letters page： Vol. 101, Issue 24, pp. 241904-1〜5 2012.12
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Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process Reviewed
R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 50, Issue 9, pp. 431-436 2012.10
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(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- Reviewed
M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
ECS Transactions page： Vol. 50, Issue 5, pp. 59-70 2012.10
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Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth Reviewed
R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 50, Issue 9, pp. 747-751 2012.10
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Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature Poster Session Reviewed
J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh
ECS Transactions page： Vol. 50, Issue 9, pp. 475-480 2012.10
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Single-crystalline laterally-graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed
M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 101, Issue 9, pp. 091905-1〜4 2012.8
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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization Reviewed
K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu
Applied Physics Letters page： Vol. 101, Issue 7, pp. 072106-1〜3 2012.8
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Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0<x<1) Films on Insulating Substrates Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
ECS Journal of Solid State Science and Technology page： Vol. 1, Issue 3, pp. P144-P147 2012.8
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SiGeミキシング誘起溶融成長によるGOI（Ge on Insulator）の形成―人工単結晶への道― Invited Reviewed
宮尾正信，佐道泰造，都甲薫，黒澤昌志
応用物理 page： Vol. 81, No. 5, pp. 410-414 2012.5
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Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 100, Issue 17, pp. 172107-1〜5 2012.4
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界面酸化膜挿入型 Au 誘起層交換成長法による大粒径 Ge(111)/絶縁膜の低温成長-界面酸化膜厚依存性-
鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造
電子情報通信学会 信学技報 page： vol. 112, no. 18, pp. 71-73 2012.4
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絶縁膜上におけるGe(Si)薄膜の溶融成長 〜Si偏析効果による大粒径化〜
加藤立奨，黒澤昌志，横山裕之，佐道泰造，宮尾正信
電子情報通信学会 信学技報 page： vol. 112, no. 18, pp. 61-62 2012.4
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Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures Reviewed
T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao
Thin Solid Films page： Vol. 520, Issue 8, pp. 3276–3278 2012.2
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Low Temperature (~250oC) Layer Exchange Crystallization of Si1-xGex (x= 1-0) on Insulator for Advanced Flexible Devices Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Thin Solid Films page： Vol. 520, Issue 8, pp. 3293–3295 2012.2
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Au-catalyst induced low temperature (~250oC) layer exchange crystallization for SiGe on insulator Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
ECS Transactions page： Vol. 35, Issue 5, pp. 39-42 2011.5
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Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization Reviewed
M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao
ECS Transactions page： Vol. 35, Issue 5, pp. 51-54 2011.5
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Low-temperature (~250oC) Cu-induced lateral crystallization of Ge on insulator Reviewed
T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao
Electrochemical and Solid-State Letters page： Vol. 17, Issue 7, pp. H274-H276 2011.4
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Au-induced low-temperature (~250oC) crystallization of Si on insulator through layer-exchange process Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Electrochemical and Solid-State Letters page： Vol. 14, Issue 6, pp. H232-H234 2011.3
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SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-on-Insulator Reviewed
T. Sadoh, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and M. Miyao
Key Engineering Materials page： Vol. 470, pp. 8-13 2011.2
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Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth Reviewed
M. Kurosawa, K. Toko, N. Kawabata, T. Sadoh, and M. Miyao
Solid State Electronics page： Volume 60, Issue 1, pp. 7–12 2011.2
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Dehydrogenation-enhanced large strain (~1.6%) in free-standing Si microstructures covered with SiN stress liners Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Electrochemical and Solid-State Letters page： Vol. 14, Issue 4, pp. H174-H176 2011.2
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Selective-mapping of uniaxial and biaxial strains in SOI micro-structures by polarized micro-probe Raman spectroscopy Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 98, Issue 1, pp. 012110-1－3 2011.1
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High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates Reviewed
M. Miyao, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and T. Sadoh
Proceeding of ICSICT2010 (IEEE) page： pp.827-830 2010.12
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Low-temperature (<250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique Reviewed
J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
Proceeding of TENCON2010 (IEEE) page： pp.2196-2198 2010.11
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(100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique Reviewed
K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao
Applied Physics Express page： Vol. 3, No. 7, pp. 075603-1－3 2010.6
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ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム
川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
電子情報通信学会 信学技報 page： Vol. 110, No. 15, pp. 13-17 2010.4
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Al-Induced Low-Temperature Crystallization of Si1-xGex (0<x<1) by Controlling Layer Exchange Process Reviewed
M. Kurosawa, T. Sadoh, and M. Miyao
Thin Solid Films page： Vol. 518,Issue 6, Supplement 1, pp. S174-S178 2010.1
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Stress-enhancement in free-standing Si pillars through non-equilibrium dehydrogenation in SiN:H stress-liners by UV-light irradiation Reviewed
T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao
Applied Physics Letters page： Vol. 95, Issue 26, pp. 262103-1－3 2009.12
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Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Reviewed
M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao
Applied Physics Letters page： Vol. 95, Issue 13, pp. 132103-1－3 2009.9
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アルミニウム誘起層交換法によるSiGe/ガラスの低温成長
黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
電子情報通信学会 信学技報 page： Vol. 109, No. 20, pp. 19-23 2009.4
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Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate Reviewed
M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
Japanese Journal of Applied Physics page： Vol. 48, No. 3, pp. 03B002-1－5 2009.3
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Ge Fraction Dependence of Al-induced Crystallization of SiGe at Low Temperatures Reviewed
M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
Journal of the Korean Physical Society page： Vol. 54, No. 1, pp. 451-454 2009.1
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Low-Temperature Oriented-Growth in [CoPt/MgO]n Multi-Layer Reviewed
T. Sadoh, M. Kurosawa, M. Kimura, K Ueda, M. Koyanagi, and M. Miyao
Thin Solid Films page： Vol. 517, Issue 1, pp. 430-433 2008.11