Papers - KUROSAWA Masashi
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Silicon‐based low-dimensional materials for Thermal Conductivity Suppression: Recent Advances and New Strategies to High Thermoelectric Efficiency Reviewed
H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao
Japanese Journal of Applied Physics page： Vol. 60, No. SA, pp. SA0803-1〜15 2020.10
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Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy Reviewed
R. Yokogawa, M. Kurosawa, and A. Ogura
ECS Transactions page： Vol. 98, No. 5, pp. 291-300 2020.9
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Hydrogen Desorption from Silicane and Germanane Crystals: Toward Creation of Free-Standing Monolayer Silicene and Germanene Reviewed
M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, and K. Shiraishi
Journal of Applied Physics page： Vol. 128, Issue 12, pp. 125301-1〜5 2020.9
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Reviewed
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Transactions page： Vol. 98, No. 5, pp. 149-156 2020.9
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Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed
Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao
Applied Physics Letters page： Vol. 117, Issue 5, pp. 053903-1〜5 2020.8
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Design of a Planar-type Uni-leg SiGe Thermoelectric Generator Reviewed
S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura
Japanese Journal of Applied Physics page： Vol. 59, No. 7, pp. 074003-1〜5 2020.7
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Continuous Growth of Germanene and Stanene Lateral Heterostructures Reviewed
T. Ogikubo, H. Shimazu, Y. Fujii, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, G. L. Lay, J. Yuhara
Advanced Materials Interfaces page： Vol. 7, No. 10, pp. 1902132-1〜7 2020.3
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Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed
H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa
Japanese Journal of Applied Physics page： Vol. 59, No. SG, pp. SGGF09-1〜6 2020.2
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Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface Reviewed
M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 59, No. SG, pp. SGGK15-1〜6 2020.2
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分子線エピタキシー法によるSi1-xSnx薄膜の形成
丹下龍志, 黒澤昌志, 中塚理
電子デバイス界面テクノロジー研究会（第25回） page： pp. 125-128 2020.1
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多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御
中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明
電子デバイス界面テクノロジー研究会（第25回） page： pp. 117-120 2020.1
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Semi-ballistic thermal conduction in polycrystalline SiGe nanowires Reviewed
N. Okamoto, R. Yanagisawa, A. Roman, Md. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura
Applied Physics Letters page： Vol.115, Issue 25, pp. 253101-1〜4 2019.12
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Reviewed
O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima
ECS Transactions page： Vol. 92, Issue 4, pp. 41-46 2019.10
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Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed
Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima
Scientific Reports page： Vol. 9, No.1, pp.14342-1〜9 2019.10
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ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性 Invited Reviewed
中塚理, 黒澤昌志
応用物理 page： Vol. 88, No. 9, pp. 597-603 2019.9
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Formation and Optoelectronic Property of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double Heterostructure on Boron-Ion-Implanted Ge(001) Substrate Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 58, No. SI, pp. SIIB23-1〜6 2019.7
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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
Applied Physics Express page： Vol. 12, No. 5, pp. 051016-1〜6 2019.5
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GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価
丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第24回） page： pp. 71-74 2019.1
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ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定
熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信
電子デバイス界面テクノロジー研究会（第24回） page： pp. 197-200 2019.1
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高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価
福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第24回） page： pp. 265-268 2019.1