Papers - KUROSAWA Masashi
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Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed
M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 58, No. SA, pp. SAAD02-1〜4 2018.11
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Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111) Reviewed
J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay
ACS Nano page： Vol. 12, Issue 11, pp. 11632-11637 2018.10
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Optoelectronic properties of High-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Semiconductor Science and Technology page： Vol. 33, No. 12, pp. 124018-1〜9 2018.10
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Ultra-thin Germanium-Tin on Insulator structure through the direct bonding technique Reviewed
T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida
Semiconductor Science and Technology page： Vol. 33, No. 12, pp. 124002-1〜5 2018.10
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Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth Reviewed
R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura
ECS Transactions page： Vol. 86, Issue 7, pp. 87-93 2018.9
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A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS Transactions page： Vol. 86, issue 7, pp. 321-328 2018.9
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エネルギーハーベスティング応用に向けたIV族混晶（Ge1-xSnx）薄膜の結晶成長 Invited Reviewed
黒澤昌志
日本熱電学会学会誌 page： Vol. 15, No.1, pp.26-31 2018.8
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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient Reviewed
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 57, No. 6S1, pp. 06HD08-1〜5 2018.5
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Segregated SiGe Ultrathin Layer Formation and Surface Planarization on Epitaxial Ag(111) by Annealing of Ag/SiGe(111) with Different Ge/(Si+Ge) Compositions Reviewed
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Journal of Applied Physics page： Vol. 57, No. 4S, pp. 04FJ05-1〜6 2018.3
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Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 57, No. 4S, pp. 04FJ02-1〜6 2018.2
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High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 112, Issue 6, pp. 062104-1〜5 2018.2
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Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed
M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 111, Issue 19, pp. 192106-1〜4 2017.11
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Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed
M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
Semiconductor Science and Technology page： Vol. 32, No. 10, pp. 104008-1〜8 2017.9
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First-principles study on adsorption structures and electronic states of stanene on α-alumina surface Reviewed
M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
Japanese Journal of Applied Physics page： Vol. 56, No. 9, pp. 095701-1〜4 2017.8
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Growth and Applications of Si1-xSnx Thin Films Reviewed
M. Kurosawa, O. Nakatsuka, and S. Zaima
ECS Transactions page： Vol. 80, Issue 4, pp. 253-258 2017.8
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エピタキシャルAg(111)上の極薄IV族結晶形成
伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一
電子情報通信学会 信学技報 page： Vol. 117, No. 101, pp. 43-48 2017.6
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Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed
Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 4S, pp.04CR10-1〜5 2017.3
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Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
Materials Science in Semiconductor Processing page： Vol. 70, pp. 151-155 2017.1
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水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化
高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第22回） page： pp. 67-70 2017.1
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Hydrogen-surfactant-mediated epitaxy of Ge1-x Snx layer and its effects on crystalline quality and photoluminescence property Reviewed
O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 1S, pp. 01AB05-1〜6 2016.12