Papers - KUROSAWA Masashi
-
Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 56, No. 1S, pp. 01AB02-1〜7 2016.11
-
Large single-crystal Ge-on-insulator by thermally-assisted (~400C) Si-seeded-pulse-laser annealing Reviewed
T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao
Materials Science in Semiconductor Processing page： Vol. 70, pp. 8-11 2016.11
-
Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed
M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
Materials Science in Semiconductor Processing page： Vol. 70, pp. 156-161 2016.10
-
Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators Reviewed
M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima
ECS Transactions page： Vol. 75, Issue 8, pp. 481-487 2016.9
-
金属誘起層交換法によるAg上Si, Ge極薄膜の形成 ーシリセン, ゲルマネンの創製を目指してー Invited Reviewed
黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明
表面科学 page： Vol. 37, No. 8, pp. 374-379 2016.8
-
Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed
Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 8S2, pp. 08PE04-1〜4 2016.7
-
Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process Reviewed
M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 8S1, pp. 08NB07-1〜5 2016.7
-
Sn系IV族半導体混晶薄膜の成長と物性評価
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
電子情報通信学会 信学技報 page： Vol. 116, No. 1, pp. 23-26 2016.4
-
Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 4S, pp. 04EB12-1〜6 2016.3
-
Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Japanese Journal of Applied Physics page： Vol. 55, No. 4S, pp. 04EB13-1〜5 2016.3
-
Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 108, Issue 5, pp. 052104-1〜4 2016.2
-
界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長
吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回） page： pp. 21-24 2016.1
-
Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析
長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
電子デバイス界面テクノロジー研究会（第21回） page： pp. 17-20 2016.1
-
Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators Reviewed
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Transaction of the Materials Research Society of Japan page： Vol. 40, No. 4, pp. 351-354 2015.12
-
Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates Reviewed
S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films page： Vol. 598, 1 January 2016, pp. 72–81 2015.12
-
Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Applied Physics Letters page： Vol. 107, Issue 21, pp. 212103-1〜5 2015.11
-
Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Reviewed
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawaa, W. Takeuchi, M. Sakashita
ECS Transactions page： Vol. 69, Issue 10, pp. 89-98 2015.10
-
High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed
W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Applied Physics Letters page： Vol. 107, Issue 2, pp.022103-1〜4 2015.7
-
Growth and Application of GeSn-Related Group-IV Semiconductor Materials Invited Reviewed
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita
Science and Technology of Advanced Materials page： Vol.16, Issue 4, pp. 043502-1〜22 2015.7
-
Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed
S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Applied Physics Letters page： Vol. 106, Issue 18, pp. 182104-1〜5 2015.5