Presentations -
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Reduction of Defects in SiC by Solution Growth for High Performance Power Device International conference
Shunta Harada, Yuji Yamamto, Kazuaki Seki, Toru Ujihara, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka
Interational symposium on role of electron microscopy in industry 2012.1.19
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p型SiC溶液成長における欠陥変換挙動 International conference
原田俊太
高品質SiC結晶次世代成長法に関する研究会 2014.3
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Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara
ECSCRM 2012 2012.9.2
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n型およびp型SiC溶液成長過程における欠陥挙動と高品質結晶成長 International conference
原田俊太
第91回バルク成長分科会研究会 2014.3
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Observation of basal plane dislocations generated during solution growth in 4H-silicon carbide
S.Y.Xiao, S.Harada, T.Ujihara
ISETS '13 2013.12.13
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Observation of Conduction Electrons in Superlattice Structure by Visible Light Photoemission Spectroscopy
Kenji Nishitani, Fumiaki Ichihashi, Daiki Shimura, Shunta Harada, Makoto Kuwahara, Miho Tagawa, Takahiro Ito, Toru Ujihara
the 23rd International Photovoltaic Science and Engineering Conference(PVSEC-23) 2013
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Polytype transformation path on 4H-SiC during top-seeded solution growth
Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara
2011 International Conference on Solid State Devices and Materials (SSDM 2011) 2011.9.28
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NEA表面を利用した伝導電子エネルギーの直接測定 International conference
市橋史朗, 志村大樹, 西谷健治, 原田俊太, 桑原真人, 伊藤孝寛, 田川美穂, 宇治原徹
2012年度春季 第60回 応用物理学関係連合講演会 2013.3.27
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NaClO3 溶液成長におけるアキラル-キラル多形転移を介したキラリティの発生と増幅
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男
日本地球惑星科学連合2014年大会 2014.3
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NaClO3溶液成長におけるアキラルな準安定相の溶解度測定 International conference
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男
第43回結晶成長国内会議 2013.11.6
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NaClO3溶液成長におけるアキラルな準安定相を介したキラル結晶形成過程 International conference
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 栗林貴弘上羽牧夫, 塚本勝男
第43回結晶成長国内会議 2013.11.6
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Nanoparticle Assembly mediated by Designed DNA Nanostructures
M. Tagawa, O. Gang, K. Yager, T. Isogai, E. Akada, S. Harada, T. Ujihara
2013.6.30
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N-type doping of 4H-SiC by top-seeded solution growth technique
K. Kusunoki, K. Kamei, K. Seki, S. Harada, Toru Ujihara
ICSCRM 2013 2013.9.29
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Improvement of surface morphology by solution flow control in solution growth of SiC on off-axis seeds
T. Umezaki, D. Koike, S. Harada, T. Ujihara
10th European Conference on Silicon Carbide and Related Materials 2014.9.21
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Increase in the growth rate by rotating the seed crystal at a high speed during the solution growth of SiC
T. Umezaki, D. Koike, S. Harada, T. Ujihara
ICSCRM 2013 2013.9.29
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Influence of solution flow on step bunching in solution growth of SiC
C. Zhu, K. Seki, S. Harada, H. Niinomi, M. Tagawa, T. Ujihara
ECSCRM 2012 2012.9.2
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Mechanisms behind low lattice thermal conduction of high density of planar defects containing TiO2-x by atomistic simulations
Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui
IUMRS-ICEM 2012 2012.9.23
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Heavily Al doped 4H-SiC growth by the top-seeded solution growth technique using Si-Al-Cu melt as a solvent
K. Kusunoki, K. Kamei, K. Seki, Y. Kishida, K. Moriguchi, H. Kaidoh, S. Harada, T. Ujihara
10th European Conference on Silicon Carbide and Related Materials 2014.9.21
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Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
17th International Conference on Crystal Growth and Epitaxy 2013.8.11
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Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
Kazuaki Seki, Shota Yamamoto, Shunta Harada, Toru Ujihara
17th International Conference on Crystal Growth and Epitaxy 2013.8.11