Presentations -
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透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察
陳 鵬磊, 原田 俊太, 荒井 重勇, 藤榮 文博, 肖 世玉, 加藤 智久, 田川 美穂, 宇治原 徹
先進パワー半導体分科会 第3回講演会
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Crystallization of NaClO3 metastable phase from unsaturated mother solution achieved by excitation of plasmonic Au nanoarray
H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu
Optics & Photonics Japan 2016
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Trial of Process Informatics in SiC Solution Growth International conference
T. Ujihara, S. Harada, Y. Tsunooka, N. Kokubo, K. Murayama, R. Murai, M. Tagawa
The 3rd International Conference on Universal Village (UV 2016)
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Effect of Crystal Orientation of Cu Current Collector on Morphology of Li Electrodeposition International conference
K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara
Nucleation and Growth Research Conference (NGRC 2016)
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Formation Mechanism of AlN Whiskers by Reacting N2 Gas and Al Vapor International conference
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
Nucleation and Growth Research Conference (NGRC 2016)
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Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth International conference
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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In-situ observation during solution growth of SiC by X-ray transmission method International conference
T. Sakai, M. Kado, H. Daikoku, S. Harada, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth International conference
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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Solvent design for high-purity SiC solution growth International conference
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara
The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)
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AlN 溶液成長における機械学習を用いた溶液流動の高効率予測
小久保 信彦, 角岡 洋介, 原田 俊太, 田川 美穂, 宇治原 徹
2016年第78回応用物理学会秋季学術講演会
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n 型 4H-SiC 中 SSF 起因フォトルミネッセンスの時間分解測定
加藤 正史, 片平 真哉, 市川 義人, 市村 正也, 原田 俊太
2016年第82回応用物理学会秋季学術講演会
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機械学習を用いた溶液成長における過飽和度分布の予測
角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹
2016年第81回応用物理学会秋季学術講演会
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X 線透過法による溶液法 SiC 結晶成長の溶液表面形状の経時変化の観察
酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹
2016年第80回応用物理学会秋季学術講演会
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X 線透過法による溶液法 SiC 結晶成長のその場観察
酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹
2016年第79回応用物理学会秋季学術講演会
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Controlling two-dimensional structuer of DNA-linked Au nanoparticle lattices on supported lipid bilayer International conference
T. Isogai, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa
The 22nd International Conference on DNA Computing and Molecular Programming (DNA22)
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Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy International conference
T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth International conference
S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Effect of Crystal Shape on Solution Flow and Surface Morphology in Solution Growth of SiC International conference
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S.Harada, M. Tagawa, T. Sakai, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Two-step growth of SiC solution growth for reduction of dislocations International conference
K. Murayama, T. Hori, S. Harada, S. Xiao, M.Tagawa, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Threading Screw Dislocation Conversion by Macrosteps during SiC Solution Growth for High-quality Crystals International conference
S. Harada, K. Murayama, S. Xiao, F. Fujie, T.Sakai, M. Tagawa, T. Ujihara
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)