論文 - 坂下 満男
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り 査読有り
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Trans. 98 巻 ( 5 ) 頁： 149 - 156 2020年9月
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Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks 査読有り
Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS LETTERS 116 巻 ( 22 ) 2020年6月
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Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing 査読有り
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
Jpn. J. Appl. Phys. 59 巻 頁： SMMA04-1 2020年4月
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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor 査読有り
Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications 招待有り 査読有り
O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima
ECS Trans. 2019 92 巻 頁： 41 2019年10月
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Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate 査読有り
Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process 査読有り
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
Applied Physics Express 12 巻 頁： 051016 2019年5月
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) 査読有り
Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment 査読有り
T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. 58 巻 頁： SBBD05 2019年2月
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2
Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 頁： . 2019年
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Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures
Suwito Galih Ramadana, Fukuda Masahiro, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 頁： . 2019年
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Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination 査読有り
M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. 58 巻 頁： SAAS02 2018年11月
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Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure 査読有り
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Semicond. Sci. Tech. 33 巻 ( 12 ) 頁： 124018 2018年11月
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A New Application of Ge1-xSnx: Thermoelectric Materials 招待有り 査読有り
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS Trans. 2018 86 巻 ( 7 ) 頁： 321-328 2018年10月
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Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge 査読有り
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water 査読有り
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
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High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water 査読有り
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
APPLIED PHYSICS LETTERS 112 巻 ( 6 ) 2018年2月
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Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor 査読有り
Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月
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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator
Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) 頁： 313 - 315 2018年
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Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers 査読有り
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 巻 頁： 162-166 2017年11月