論文 - 坂下 満男
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Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 巻 頁： 79 - 85 2025年
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Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
APPLIED PHYSICS EXPRESS 17 巻 ( 11 ) 2024年11月
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Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 176 巻 2024年6月
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Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 4 ) 2024年4月
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Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method
Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 163 巻 2023年8月
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Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence
Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 7 ) 2023年7月
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Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy
Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS 16 巻 ( 4 ) 2023年4月
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り
Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
Mater. Sci. Semicond. Proc. 161 巻 頁： 107462 2023年3月
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Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping 査読有り
Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Mater. Sci. Semicond. Proc. 176 巻 頁： 108302 2023年
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Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface 査読有り
Kagoshima E., Takeuchi W., Kutsuki K., Sakashita M., Fujiwara H., Nakatsuka O.
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月
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Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray 査読有り
W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O. Nakatsuka
Japanese Journal of Applied Physics 61 巻 頁： SC1072 2022年5月
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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs 招待有り 査読有り
T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 2 ) 頁： 021007 2022年2月
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Photoluminescence properties of heavily Sb doped Ge1-x Sn (x) and heterostructure design favorable for n(+)-Ge1-x Sn (x) active layer
Zhang Shiyu, Fukuda Masahiro, Jeon Jihee, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月
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Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Kojima Kazutoshi, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS EXPRESS 15 巻 ( 1 ) 2022年1月
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Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts 招待有り 査読有り
K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
IEEE Journal of the Electron Devices Society 2021年12月
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Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Shimizu Mitsuaki, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( 7 ) 2021年7月
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Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System
Shibayama Shigehisa, Nagano Jotaro, Asaka Koji, Sakashita Mitsuo, Nakatsuka Osamu
ACS APPLIED ELECTRONIC MATERIALS 3 巻 ( 5 ) 頁： 2203 - 2211 2021年5月
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Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application 招待有り 査読有り
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Trans. 102 巻 ( 4 ) 頁： 3 - 9 2021年4月
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property
Kasahara Kentaro, Senga Kazuki, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) 頁： 58 - 60 2021年
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Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode 査読有り
Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu
APPLIED PHYSICS LETTERS 117 巻 ( 23 ) 2020年12月