論文 - 宇治原 徹
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Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents 査読有り
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Jpn. J. Appl. Phys 55 巻 頁： 01AC01 2016年
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Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor 査読有り Open Access
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
J. Cryst. Growth 2016年
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Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC 査読有り
T. Umezaki, D. Koike, S. Harada, T. Ujihara
Japanese Journal of Applied Physics 55 巻 ( 12 ) 頁： 125601 2016年
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Two-step SiC solution growth for dislocation reduction Open Access
"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"
J. Cryst. Growth 2016年
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Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth 査読有り
Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 39-42 2015年
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Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds 査読有り
Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 31-34 2015年
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Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC 査読有り
Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura
Materials Science Forum 821-823 巻 頁： 35-38 2015年
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3C-SiC Crystal on Sapphire by Solution Growth Method 査読有り
Kenji Shibata, Shunta Harada and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 185-188 2015年
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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, 821-823 巻 頁： 9-13 2015年
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Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent 査読有り
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum 821-823 巻 頁： 14-17 2015年
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"Effect of forced convection by crucible design in solution growth of SiC single crystal" 査読有り
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
821-823 巻 頁： pp. 22-25 2015年
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バルク結晶成長のこの10年 Open Access
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) 42 巻 ( 1 ) 頁： pp.64-68 2015年
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Non-uniform electrodeposition of zinc on the (0001) plane 査読有り Open Access
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films 590 巻 頁： pp. 207-213 2015年
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Dislocation Conversion during SiC Solution Growth for High-quality Crystals 査読有り
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
821-823 巻 頁： pp. 3-8 2015年
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Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal 査読有り
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
821-823 巻 頁： pp. 18-21 2015年
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Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth 423 巻 頁： 45-49 2015年
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"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" 査読有り
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth 401 巻 頁： 494-498 2014年9月
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"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth 401 巻 頁： 681-685 2014年9月
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"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" 査読有り
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth 395 巻 頁： 68-73 2014年6月
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"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" 査読有り
Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto
Crystal Growth and Design 14 巻 ( 7 ) 頁： 3596-3602 2014年6月