論文 - 宇治原 徹
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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, 821-823 巻 頁： 9-13 2015年
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Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent 査読有り
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum 821-823 巻 頁： 14-17 2015年
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バルク結晶成長のこの10年
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) 42 巻 ( 1 ) 頁： pp.64-68 2015年
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Non-uniform electrodeposition of zinc on the (0001) plane 査読有り
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films 590 巻 頁： pp. 207-213 2015年
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Dislocation Conversion during SiC Solution Growth for High-quality Crystals 査読有り
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
821-823 巻 頁： pp. 3-8 2015年
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Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal 査読有り
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
821-823 巻 頁： pp. 18-21 2015年
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"Effect of forced convection by crucible design in solution growth of SiC single crystal" 査読有り
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
821-823 巻 頁： pp. 22-25 2015年
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Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth 423 巻 頁： 45-49 2015年
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"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" 査読有り
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth 401 巻 頁： 494-498 2014年9月
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"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth 401 巻 頁： 681-685 2014年9月
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"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" 査読有り
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth 395 巻 頁： 68-73 2014年6月
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"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" 査読有り
Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto
Crystal Growth and Design 14 巻 ( 7 ) 頁： 3596-3602 2014年6月
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"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" 査読有り
Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto
Journal of Crystal Growth 394 巻 頁： 106-111 2014年5月
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"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" 査読有り
Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara
Applied Physics Express 7 巻 頁： 065501 2014年5月
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"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" 査読有り
Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara
Journal of Crystal Growth 392 巻 頁： 60-65 2014年4月
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"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" 査読有り
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta
Superconductor Science and Technology 27 巻 頁： 065005 (6pp) 2014年4月
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"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" 査読有り
Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Materials Science Forum 778-780 巻 頁： Pages 79-82 2014年2月
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"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" 査読有り
Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara
Materials Science Forum 778-780 巻 頁： 63-66 2014年2月
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"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" 査読有り
Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara
Materials Science Forum 778-780 巻 頁： 67-70 2014年2月
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"Growth of a smooth CaF2 layer on NdFeAsO thin film" 査読有り
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta
Journal of Physics: Conference Series 507 巻 ( 1 ) 頁： 012047 2014年