論文 - 宇治原 徹
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Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe 査読有り
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima
Jpn. J. Appl. Phys. 43 巻 頁: L250-L252 2004年
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Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution 査読有り
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa
J. Appl. Phys. 96 (2) 巻 頁: 1238-1241 2004年
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Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation 査読有り
Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara
Jpn. J. Appl. Phys. Feb-46 巻 頁: L907 2004年
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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate 査読有り
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Appl. Surf. Sci. 224 巻 頁: 604-607 2004年
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Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy 査読有り
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
J. Crystal Growth 266 巻 頁: 467-474 2004年
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材料工学からの太陽電池研究
宇治原徹
まてりあ 43 巻 頁: 949-953 2004年
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SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦
日本結晶成長学会誌 31 巻 頁: 29-37 2004年
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy 査読有り
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum 457-460 巻 頁: 633-637 2004年
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Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method 査読有り
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
頁: ? 2004年
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TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent 査読有り
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁: 347-351 2004年
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Solution growth of self standing 6H-SiC single crystal using metal solvent 査読有り
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁: 123-126 2004年
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals 査読有り
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth 254 巻 頁: 188-195 2003年
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High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁: L217-L219 2003年
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix 査読有り
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics 94 巻 頁: 916-920 2003年
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure 査読有り
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters 83 巻 頁: 1258-1260 2003年
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate 査読有り
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. 42 巻 頁: L232-L234 2003年
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature 査読有り
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 250 巻 頁: 298-304 2003年
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Hightemperature solution growth and characterization of chromium disilicide 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁: 7292-7293 2003年
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Stacked Ge islands for photovoltaic applications 査読有り
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat 4 巻 頁: 367-370 2003年
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) 頁: 1241 - 1244 2003年