論文 - 宇治原 徹
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Molten metal flux growth and properties of CrSi2 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS. 383 巻 頁: 319-321 2004年
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Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer 査読有り
"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"
Appl. Phys. Lett. 84 巻 頁: 2802-2804 2004年
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In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy 査読有り
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima
J. Crystal Growth 262 巻 頁: 536-542 2004年
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Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate 査読有り
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima
J. Crystal Growth 262 巻 頁: 196-201 2004年
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Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime 査読有り
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Thin Solid Films 451-452 巻 頁: 604-607 2004年
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In-situ observations of melt growth behavior of polycrystalline silicon 査読有り
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth 262 巻 頁: 124 2004年
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Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations 査読有り
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido
J. Crystal Growth 260 巻 頁: 372-383 2004年
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy 査読有り
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum 457-460 巻 頁: 633-637 2004年
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Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method 査読有り
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
頁: ? 2004年
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TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent 査読有り
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁: 347-351 2004年
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Solution growth of self standing 6H-SiC single crystal using metal solvent 査読有り
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁: 123-126 2004年
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals 査読有り
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth 254 巻 頁: 188-195 2003年
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix 査読有り
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics 94 巻 頁: 916-920 2003年
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure 査読有り
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters 83 巻 頁: 1258-1260 2003年
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate 査読有り
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. 42 巻 頁: L232-L234 2003年
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature 査読有り
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 250 巻 頁: 298-304 2003年
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Hightemperature solution growth and characterization of chromium disilicide 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁: 7292-7293 2003年
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Stacked Ge islands for photovoltaic applications 査読有り
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat 4 巻 頁: 367-370 2003年
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High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁: L217-L219 2003年
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) 頁: 1241 - 1244 2003年