論文 - 宇治原 徹
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Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth 査読有り
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CrystEngComm 23 巻 ( (8) ) 2021年1月
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Geometrical design of a crystal growth system guided by a machine learning algorithm 査読有り
Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
CrystEngComm 2021年
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Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal 査読有り Open Access
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF THERMAL SCIENCE AND TECHNOLOGY 16 巻 ( 1 ) 2021年
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Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints 査読有り Open Access
Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru
MATERIALS TODAY COMMUNICATIONS 25 巻 2020年12月
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Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning 査読有り Open Access
Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS 10 巻 ( 9 ) 2020年9月
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Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
CRYSTAL GROWTH & DESIGN 20 巻 ( 8 ) 頁： 5493 - 5507 2020年8月
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Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography 査読有り
Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA 194 巻 頁： 387 - 393 2020年8月
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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method 査読有り
Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月
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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer 査読有り
Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月
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Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes 査読有り
Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru
ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 8 ) 頁： 9341 - 9346 2020年2月
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Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation 査読有り
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 532 巻 2020年2月
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Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field Open Access
Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS 10 巻 ( 2 ) 2020年2月
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Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 査読有り
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu
Phys. Status Solidi B 257 巻 ( 2 ) 頁： 1900318 2020年
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Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal 査読有り
Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM 21 巻 ( 47 ) 頁： 7260 - 7265 2019年12月
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Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique 査読有り Open Access
Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji
1 巻 ( 3 ) 2019年12月
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Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method 査読有り
Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.
JOURNAL OF CRYSTAL GROWTH 520 巻 頁： 72 - 81 2019年8月
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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process 査読有り
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 517 巻 頁： 59 - 63 2019年7月
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In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi
CRYSTAL GROWTH & DESIGN 19 巻 ( 7 ) 頁： 4138 - 4150 2019年7月
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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method 査読有り
Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara
Mater. Sci. Forum 963 巻 頁： 80-84 2019年7月
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Nondestructive visualization of threading dislocations in GaN by micro raman mapping 査読有り Open Access
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月