論文 - 宇治原 徹
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature 査読有り
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 250 巻 頁： 298-304 2003年
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Hightemperature solution growth and characterization of chromium disilicide 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁： 7292-7293 2003年
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Stacked Ge islands for photovoltaic applications 査読有り
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat 4 巻 頁： 367-370 2003年
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) 頁： 1241 - 1244 2003年
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Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure 査読有り
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima
( 3 ) 頁： 2746 - 2749 2003年
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Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application 査読有り
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima
( 1 ) 頁： 98-101 2003年
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Direct observations of crystal growth from silicon melt 査読有り
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima
( 1 ) 頁： 110 - 113 2003年
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Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution 査読有り
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima
( 1 ) 頁： 158 - 160 2003年
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications 査読有り
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido
Sol. Energy Mater. Sol. Cells 72 巻 頁： 93-100 2002年
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth 241 巻 頁： 387-394 2002年
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均一組成SiGeバルク結晶成長と関連する測定技術
宇治原徹, 我妻幸長, 宇佐美徳隆, 佐崎 元, 藤原航三, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 29 巻 ( 5 ) 頁： 339 2002年
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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution 査読有り
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
J. Appl. Phys. 92 巻 頁： 7098-7101 2002年
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Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Non-Cryst. Solids 312-314 巻 頁： 196-202 2002年
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In situ observation of crystal growth behavior from silicon melt 査読有り
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima
J. Crystal Growth 243 巻 頁： 275-282 2002年
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals 査読有り
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido
J. Crystal Growth 240 巻 頁： 370-381 2002年
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells 査読有り
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Sol. Energy Mater. Sol. Cells 73 巻 頁： 305-320 2002年
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Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution 査読有り
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
Jpn. J. Appl. Phys. 41 巻 頁： 4462-4465 2002年
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures 査読有り
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima
Mat. Sci. Eng. B 89 巻 頁： 364-367 2002年
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In-situ monitoring system of the position and temperature at the crystal-solution interface 査読有り
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 236 巻 頁： 364-367 2002年
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*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth 242 巻 頁： 313-320 2002年