論文 - 宇治原 徹
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Modeling and analysis of undoped GaN grown in a horizontal laminar flow MOCVD reactor 査読有り
Takahiro Gotow, Tsutomu Sonoda, Tokio Takahashi, Hisashi Yamada, Toshihide Ide, Reiko Azumi, Mitsuaki Shimizu, Yosuke Tsunooka, Shota Seki, Kentaro Kutsukake, and Toru Ujihara
Materials Science in Semiconductor Processing 188 巻 頁： 109258 2025年3月
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The effects of polyethylene glycol on the nucleation and growth of DNA-functionalized gold nanoparticles crystals 査読有り
Kojima, S; Zhang, LD; Kumar, C; Sumi, H; Ohta, N; Sekiguchi, H; Tsuzuki, K; Harada, S; Ujihara, T; Tsukamoto, K; Tagawa, M
Journal of Crystal Growth 640 巻 2024年8月
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Modulated crystallographic shear structure in titanium–chromium oxides: their structure and phonon-transport properties 査読有り
S. Harada, T. Hattori, M. Inden, S. Sugimoto, M. Ito, M. Tagawa and T. Ujihara
Journal of Applied Crystallography 57 巻 ( 4 ) 頁： 1212 - 1216 2024年8月
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Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth 査読有り
Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara
Journal of Crystal Growth 631 巻 2024年4月
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Effect of Solution Components on Solvent Inclusion in SiC Solution Growth 査読有り
Huiqin Zhou, Hitoshi Miura, Yuma Fukami, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
Crystal Growth & Design 24 巻 ( 4 ) 頁： 1806 - 1817 2024年2月
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Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations 査読有り
Sato, R ; Kutsukake, K ; Harada, S ; Tagawa, M ; Ujihara
ADVANCED THEORY AND SIMULATIONS 2023年7月
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Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions 査読有り
Zhou, HQ (Zhou, Huiqin); Miura, H (Miura, Hitoshi); Dang, YF (Dang, Yifan); Fukami, Y (Fukami, Yuma); Takemoto, H (Takemoto, Hisaki); Harada, S (Harada, Shunta); Tagawa, M (Tagawa, Miho); Ujihara, T (Ujihara, Toru)
CRYSTAL GROWTH & DESIGN 23 巻 ( 5 ) 頁： 3393 - 3401 2023年5月
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Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC 査読有り
Dang, Yifa , Liu, Xinbo,Zhu, Can, Fukami, Yuma,Ma, Shuyang , Zhou, Huiqin ,Liu, Xin ,Kutsukake, Kentaro, Harada, Shunta , Ujihara, Toru
CRYSTAL GROWTH & DESIGN 頁： 1023 - 1032 2023年2月
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Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces 査読有り
Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada
Journal of Alloys and Compounds 934 巻 2023年2月
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非弾性Ｘ線散乱によるルチル型酸化チタンのフォノン分散測定 査読有り
原田 俊太, 小坂 直輝, 筒井 智嗣, 田中 克志, 田川 美穂, 宇治原 徹
SPring-8/SACLA利用研究成果集 10 巻 ( 6 ) 頁： 521 - 523 2022年12月
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Bayesian Optimization for Cascade-Type Multistage Processes 査読有り
Kusakawa, S,Takeno, S , Inatsu, Y, Kutsukake, K, Iwazaki, S,Nakano, T , Ujihara, T,Karasuyama, M ,Takeuchi, I
NEURAL COMPUTATION 34 巻 ( 12 ) 頁： 2408 - 2431 2022年11月
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Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces 査読有り
Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada
SSRN 2022年10月
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Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC 査読有り
Masaru Isono,Shunta Harada,Kentaro Kutsukake,Tomoo Yokoyama,Miho Tagawa,Toru Ujihara
ADVANCED THEORY AND SIMULATIONS 5 巻 ( 9 ) 2022年7月
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A Transfer Learning-Based Method for Facilitating the Prediction of Unsteady Crystal Growth 査読有り
Yifan Dang,Kentaro Kutsukake,Xin Liu,Yoshiki Inoue,Xinbo Liu,Shota Seki,Can Zhu,Shunta Harada,Miho Tagawa,Toru Ujihara
ADVANCED THEORY AND SIMULATIONS 5 巻 ( 9 ) 2022年7月
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Designing a High-Crystallinity Nano-Gapped Particle Superlattice via DNA-Guided Colloidal Crystallization and Dehydration 査読有り
Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, and Miho Tagawa
Crystal Growth＆Design 22 巻 ( 6 ) 頁： 3708 - 3718 2022年4月
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Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs 査読有り
Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara
AIP Advances 12 2022年3月
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Crossover from incoherent to coherent thermal conduction in bulk titanium oxide natural superlattices
Harada Shunta, Kosaka Naoki, Yagi Takashi, Sugimoto Shunya, Tagawa Miho, Ujihara Toru
SCRIPTA MATERIALIA 208 巻 2022年2月
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Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method
Yifan Dang, Can Zhu, Xin Liu, Wancheng Yu, Xinbo Liu, Koki Suzuki, Tomoaki Furusho, Shunta Harada, Miho Tagawa, Toru Ujihara
Journal of Crystal Growth 2022年2月
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Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification 査読有り
Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, Noritaka Usami
ACS OMEGA 7 巻 ( 8 ) 頁： 6665 - 6673 2022年2月
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Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth
Liu Xinbo, Dang Yifan, Suzuki Koki, Zhu Can, Yu Wancheng, Harada Shunta, Tagawa Miho, Ujihara Toru
JOURNAL OF CRYSTAL GROWTH 578 巻 2022年1月
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High fracture toughness AlN achieved by addition of AlN whiskers and tape-casting
Shimizu Hiroki, Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Harada Shunta, Ujihara Toru, Ohnishi Yoshihiro
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 130 巻 ( 1 ) 頁： 195 - 198 2022年1月
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Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
Fujie Fumihiro, Harada Shunta, Suo Hiromasa, Raghothamachar Balaji, Dudley Michael, Hanada Kenji, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
MATERIALIA 20 巻 2021年12月
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Bayesian Optimization for Cascade-type Multi-stage Processes 査読有り
Shunya Kusakawa, Shion Takeno, Yu Inatsu, Kentaro Kutsukake, Shogo Iwazaki, Takashi Nakano, Toru Ujihara, Masayuki Karasuyama, Ichiro Takeuchi
arXiv:2111 2021年11月
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In-operando x-ray topography analysis of SiC metal-oxide-semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations 査読有り
Konishi Kumiko, Fujita Ryusei, Kobayashi Keisuke, Yoneyama Akio, Ishiji Kotaro, Okino Hiroyuki, Shima Akio, Ujihara Toru
JOURNAL OF APPLIED PHYSICS 130 巻 ( 14 ) 2021年10月
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Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals 査読有り
Ailihumaer Tuerxun, Peng Hongyu, Fujie Fumihiro, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Ujihara Toru
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS 271 巻 2021年9月
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Two-Step Nanoparticle Crystallization via DNA-Guided Self-Assembly and the Nonequilibrium Dehydration Process
Sumi Hayato, Ohta Noboru, Sekiguchi Hiroshi, Harada Shunta, Ujihara Toru, Tsukamoto Katsuo, Tagawa Miho
CRYSTAL GROWTH & DESIGN 21 巻 ( 8 ) 頁： 4506 - 4515 2021年8月
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Y Local Atomic Structures for Tunable Ordered Arrangements of Crystallographic Shear Planes in Titanium-Chromium Oxide Natural Superlattices 査読有り
Harada Shunta, Sugimoto Shunya, Kosaka Naoki, Tagawa Miho, Ujihara Toru
JOURNAL OF PHYSICAL CHEMISTRY C 125 巻 ( 28 ) 頁： 15730 - 15736 2021年7月
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Control of microstructure and mechanical properties of sintered aluminum nitride through addition of aluminum nitride whiskers 査読有り
Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Shimizu Hiroki, Ujihara Toru, Ohnishi Yoshihiro
JOURNAL OF ASIAN CERAMIC SOCIETIES 9 巻 ( 3 ) 頁： 1248 - 1254 2021年7月
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Ordered Arrangement of Planar Faults with Picoscale Perfection in Titanium Oxide Natural Superlattices 査読有り
Harada Shunta, Kosaka Naoki, Tagawa Miho, Ujihara Toru
JOURNAL OF PHYSICAL CHEMISTRY C 125 巻 ( 20 ) 頁： 11175 - 11181 2021年5月
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Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC 査読有り
Fujie Fumihiro, Peng Hongyu, Ailihumaer Tuerxun, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA 208 巻 2021年4月
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Geometrical design of a crystal growth system guided by a machine learning algorithm 査読有り
Yu Wancheng, Zhu Can, Tsunooka Yosuke, Huang Wei, Dang Yifan, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM 23 巻 ( 14 ) 頁： 2695 - 2702 2021年4月
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Intensity Interference in a Coherent Spin-Polarized Electron Beam
Kuwahara Makoto, Yoshida Yuya, Nagata Wataru, Nakakura Kojiro, Furui Masato, Ishida Takafumi, Saitoh Koh, Ujihara Toru, Tanaka Nobuo
PHYSICAL REVIEW LETTERS 126 巻 ( 12 ) 2021年3月
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Chiral Optical Force Generated by a Superchiral Near-Field of a Plasmonic Triangle Trimer as Origin of Giant Bias in Chiral Nucleation: A Simulation Study 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Cheng An-Chieh, Tagawa Miho, Ujihara Toru, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
JOURNAL OF PHYSICAL CHEMISTRY C 125 巻 ( 11 ) 頁： 6209 - 6221 2021年3月
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Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM 23 巻 ( 9 ) 頁： 1982 - 1990 2021年3月
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Detection and classification of dislocations in GaN by optical microscope using birefringence
Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano,
Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV ( 117060Y ) 2021年3月
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Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy
Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月
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Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth 査読有り
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CrystEngComm 23 巻 ( (8) ) 2021年1月
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Geometrical design of a crystal growth system guided by a machine learning algorithm 査読有り
Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
CrystEngComm 2021年
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Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal 査読有り
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF THERMAL SCIENCE AND TECHNOLOGY 16 巻 ( 1 ) 2021年
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Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints 査読有り
Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru
MATERIALS TODAY COMMUNICATIONS 25 巻 2020年12月
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Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning 査読有り
Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS 10 巻 ( 9 ) 2020年9月
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Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
CRYSTAL GROWTH & DESIGN 20 巻 ( 8 ) 頁： 5493 - 5507 2020年8月
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Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography 査読有り
Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA 194 巻 頁： 387 - 393 2020年8月
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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method 査読有り
Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月
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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer 査読有り
Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月
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Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes 査読有り
Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru
ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 8 ) 頁： 9341 - 9346 2020年2月
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Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation 査読有り
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 532 巻 2020年2月
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Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field
Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS 10 巻 ( 2 ) 2020年2月
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Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 査読有り
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu
Phys. Status Solidi B 257 巻 ( 2 ) 頁： 1900318 2020年
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Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal 査読有り
Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM 21 巻 ( 47 ) 頁： 7260 - 7265 2019年12月
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Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique 査読有り
Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji
1 巻 ( 3 ) 2019年12月
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Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method 査読有り
Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.
JOURNAL OF CRYSTAL GROWTH 520 巻 頁： 72 - 81 2019年8月
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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process 査読有り
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 517 巻 頁： 59 - 63 2019年7月
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In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi
CRYSTAL GROWTH & DESIGN 19 巻 ( 7 ) 頁： 4138 - 4150 2019年7月
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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method 査読有り
Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara
Mater. Sci. Forum 963 巻 頁： 80-84 2019年7月
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Nondestructive visualization of threading dislocations in GaN by micro raman mapping 査読有り
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik
CRYSTAL RESEARCH AND TECHNOLOGY 54 巻 ( 5 ) 2019年5月
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Plasmonic Trapping-Induced Crystallization of Acetaminophen 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Uda Satoshi, Tagawa Miho, Ujihara Toni, Miyamoto Katsuhiko, Omatsu Takashige
CRYSTAL GROWTH & DESIGN 19 巻 ( 2 ) 頁： 529-537 2019年2月
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少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発
宇治原 徹
エレクトロニクス実装学会誌 22 巻 ( 3 ) 頁： 195-198 2019年
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結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明
石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹
日本結晶成長学会誌 46 巻 ( 1 ) 頁： 136-140 2019年
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機械学習を用いた結晶成長予測モデルの構築とその応用
宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂
表面と真空 62 巻 ( 3 ) 頁： 136-140 2019年
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Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC 査読有り
Wang Lei, Horiuchi Takashi, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 498 巻 頁： 140 - 147 2018年9月
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In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige
CRYSTAL GROWTH & DESIGN 18 巻 ( 8 ) 頁： 4230 - 4239 2018年8月
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Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state 査読有り
Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru
REVIEW OF SCIENTIFIC INSTRUMENTS 89 巻 ( 7 ) 2018年7月
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Detection of edge component of threading dislocations in GaN by Raman spectroscopy
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月
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Dislocation Behavior in Bulk Crystals Grown by TSSG Method 査読有り
K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara
Mater. Sci. Forum 924 巻 頁： 39-42 2018年
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Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method 査読有り
K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara
Mater. Sci. Forum 924 巻 頁： 60-63 2018年
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Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation 査読有り
F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara
Appl. Phys. Lett 113 巻 頁： 012101 2018年
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Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping
N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara
Appl. Phys. Express 11 巻 頁： 111001 2018年
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Improvement mechanism of sputtered AlN films by high-temperature annealing 査読有り
S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara
J. Cryst. Growth 502 巻 頁： 41-44 2018年
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High-speed prediction of computational fluid dynamics simulation in crystal growth 査読有り
Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara
CrystEngComm 20 巻 頁： 6546 - 6550 2018年
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Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals 査読有り
H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara
Cryst. Growth Des 18 巻 頁： 4749-4755 2018年
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Coherent pulse beam in spin-polarized TEM using an NEA photocathode 査読有り
Kuwahara M., Ujihara T., Saitoh K., Tanaka N.
2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) 頁： . 2018年
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Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements
Ichihashi Fumiaki, Kawaguchi Takahiko, Dong Xinyu, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru
AIP ADVANCES 7 巻 ( 11 ) 2017年11月
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Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method 査読有り
Yamamoto Takuya, Adkar Nikhil, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 474 巻 頁： 50-54 2017年9月
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Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation 査読有り
Yamamoto Takuya, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH 470 巻 頁： 75-88 2017年7月
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Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor
Matsumoto M., Saitou H., Takeuchi Y., Harada S., Tagawa M., Ujihara T.
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 576-580 2017年6月
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Two-step SiC solution growth for dislocation reduction
Murayama K., Hori T., Harada S., Xiao S., Tagawa M., Ujihara T.
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 874-878 2017年6月
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Phase transition process in DDAB supported lipid bilayer 査読有り
Isogai Takumi, Nakada Sakiko, Yoshida Naoya, Sumi Hayato, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 88-92 2017年6月
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SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation 査読有り
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
Mater. Sci. Forum 897 巻 頁： 24-27 2017年5月
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Solvent design for high-purity SiC solution growth 査読有り
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara
Mater. Sci. Forum 897 巻 頁： 32-35 2017年5月
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Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth 査読有り
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
Mater. Sci. Forum 897 巻 頁： 28-31 2017年5月
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Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors 査読有り
Ishikawa Kohei, Ito Yasumasa, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTAL GROWTH & DESIGN 17 巻 ( 5 ) 頁： 2379-2385 2017年5月
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Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaCIO3 Unsaturated Mother Solution 査読有り
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Maruyama Mihoko, Ujihara Toru, Omatsu Takashige, Mori Yusuke
CRYSTAL GROWTH & DESIGN 17 巻 ( 2 ) 頁： 809-818 2017年2月
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Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents 査読有り
Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime
JOURNAL OF CRYSTAL GROWTH 458 巻 頁： 37-43 2017年1月
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Phase transition process in DDAB supported lipid bilayer
"T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"
J. Cryst. Growth 468 巻 頁： 88-92 2017年
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Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes 査読有り
S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi
Langmuir 頁： 12823–12832 2016年11月
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Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth 査読有り
S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
Cryst. Growth Des. 頁： 6436–6439 2016年10月
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Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles 査読有り
H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara
CrystEngComm 18 巻 ( 39 ) 頁： 7441-7448 2016年7月
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Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis
"S. Xiao, S. Harada, K. Murayama, T. Ujihara"
Cryst. Growth Des. 16 巻 ( 9 ) 頁： 5136-5140 2016年7月
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Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer 査読有り
T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa
Japanese Journal of Applied Physics 55 巻 ( 3S2 ) 頁： 03DF11 2016年3月
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Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method 査読有り
Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara
Mater. Sci. Forum, 858 巻 頁： 57-60 2016年
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High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent 査読有り
S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara
Mater. Sci. Forum, 858 巻 頁： 1210-1213 2016年
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The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode 査読有り
Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka
Appl. Phys. Lett. 109 巻 頁： 013108 2016年
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Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC 査読有り
T. Umezaki, D. Koike, S. Harada, T. Ujihara
Japanese Journal of Applied Physics 55 巻 ( 12 ) 頁： 125601 2016年
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Two-step SiC solution growth for dislocation reduction
"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"
J. Cryst. Growth 2016年
-
Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor 査読有り
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
J. Cryst. Growth 2016年
-
Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution 査読有り
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori
Cryst. Growth Des. 2016年
-
Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles 査読有り
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara
CrystEngComm 18 巻 頁： 7441-7448 2016年
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Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents 査読有り
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Jpn. J. Appl. Phys 55 巻 頁： 01AC01 2016年
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Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth 査読有り
Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 39-42 2015年
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Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds 査読有り
Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 31-34 2015年
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Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC 査読有り
Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura
Materials Science Forum 821-823 巻 頁： 35-38 2015年
-
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, 821-823 巻 頁： 9-13 2015年
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Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent 査読有り
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum 821-823 巻 頁： 14-17 2015年
-
3C-SiC Crystal on Sapphire by Solution Growth Method 査読有り
Kenji Shibata, Shunta Harada and Toru Ujihara
Materials Science Forum 821-823 巻 頁： 185-188 2015年
-
"Effect of forced convection by crucible design in solution growth of SiC single crystal" 査読有り
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
821-823 巻 頁： pp. 22-25 2015年
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バルク結晶成長のこの10年
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) 42 巻 ( 1 ) 頁： pp.64-68 2015年
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Non-uniform electrodeposition of zinc on the (0001) plane 査読有り
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films 590 巻 頁： pp. 207-213 2015年
-
Dislocation Conversion during SiC Solution Growth for High-quality Crystals 査読有り
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
821-823 巻 頁： pp. 3-8 2015年
-
Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal 査読有り
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
821-823 巻 頁： pp. 18-21 2015年
-
Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth 423 巻 頁： 45-49 2015年
-
"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" 査読有り
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth 401 巻 頁： 494-498 2014年9月
-
"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" 査読有り
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth 401 巻 頁： 681-685 2014年9月
-
"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" 査読有り
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth 395 巻 頁： 68-73 2014年6月
-
"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" 査読有り
Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto
Crystal Growth and Design 14 巻 ( 7 ) 頁： 3596-3602 2014年6月
-
"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" 査読有り
Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto
Journal of Crystal Growth 394 巻 頁： 106-111 2014年5月
-
"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" 査読有り
Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara
Applied Physics Express 7 巻 頁： 065501 2014年5月
-
"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" 査読有り
Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara
Journal of Crystal Growth 392 巻 頁： 60-65 2014年4月
-
"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" 査読有り
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta
Superconductor Science and Technology 27 巻 頁： 065005 (6pp) 2014年4月
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"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" 査読有り
Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Materials Science Forum 778-780 巻 頁： Pages 79-82 2014年2月
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"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" 査読有り
Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara
Materials Science Forum 778-780 巻 頁： 63-66 2014年2月
-
"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" 査読有り
Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara
Materials Science Forum 778-780 巻 頁： 67-70 2014年2月
-
"Growth of a smooth CaF2 layer on NdFeAsO thin film" 査読有り
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta
Journal of Physics: Conference Series 507 巻 ( 1 ) 頁： 012047 2014年
-
"Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope" 査読有り
Makoto Kuwahara, Soichiro Kusunoki, Yoshito Nambo, Koh Saitoh, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Yoshikazu Takeda and Nobuo Tanaka
Appl. Phys. Lett. 105 巻 ( 193101 ) 2014年
-
Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy
F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th 頁： 2882-2885 2014年
-
"Critical current density and grain boundary property of BaFe2(As,P)2 thin films" 査読有り
A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta
Physica C: Superconductivity,Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV 494 巻 頁： 181–184 2013年11月
-
Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM 査読有り
Makoto Kuwahara,Yoshito Nambo, Soichiro Kusunoki, Xiuguang Jin, Koh Saitoh, Hidefumi Asano, Toru Ujihara, Yoshikazu Takeda, Tsutomu Nakanishi and Nobuo Tanaka
Microscopy Advance Access 頁： pp.1-8 2013年6月
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"Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals" 査読有り
Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, and Toru Ujihara
Cryst. Growth Des. 13 巻 ( (8) ) 頁： 3691-3696 2013年6月
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"Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth" 査読有り
Materials Science Forum 740-742 巻 頁： pp.15-18 2013年1月
-
"Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method" 査読有り
Materials Science Forum 740-742 巻 頁： pp.311-314 2013年1月
-
"Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC" 査読有り
Materials Science Forum 740-742 巻 頁： 189-192 2013年1月
-
Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method 査読有り
H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara,
52 巻 頁： 08JE17 (4 pages). 2013年
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"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" 査読有り
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara
APL Mater. 1 巻 ( 2 ) 頁： 022109 (7 pages) 2013年
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超高品質SiC溶液成長 査読有り
宇治原徹, 原田俊太, 山本祐治, 関和明
応用物理 82 巻 ( 4 ) 頁： 326-329 2013年
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SiC 結晶成長における多形制御 ～速度論的多形制御法の提案（3C-SiC 溶液成長を例に）～ 査読有り
関 和明、原田 俊太、宇治原 徹
日本結晶成長学会誌 40 巻 ( 4 ) 頁： 253-260 2013年
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SiC溶液成長の最近の展開 査読有り
原田 俊太、山本 祐治、関 和明、宇治原 徹
日本結晶成長学会誌 40 巻 頁： 25-32 2013年
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"Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth" 査読有り
Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, and Katsuo Tsukamoto
Cryst. Growth Des. 13 巻 ( 12 ) 頁： pp.5188-5192 2013年
-
“Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article” 査読有り
Journal of Crystal Growth 360 巻 頁： 176-180. 2012年12月
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Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation 査読有り
Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda
Journal of Crystal Growth 353 巻 ( 1 ) 頁： 84-87 2012年8月
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Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth 査読有り
Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada
Materials Science Forum 717–720 巻 頁： 351-354 2012年5月
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Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth 査読有り
Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara
Materials Science Forum 717–720 巻 頁： 53-56 2012年5月
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Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films 査読有り
Hiroki Uemura, Takahiko Kawaguchi, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda, Hiroshi Ikuta
Solid State Communications 152 巻 ( 8 ) 頁： 735-739 2012年4月
-
Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth 査読有り
Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, and Toru Ujihara
Crystal Growth & Design 12 巻 ( (6) ) 頁： 3209-3214 2012年
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30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode 査読有り
M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka
Appl. Phys. Lett. 101 巻 頁： 033102 2012年
-
“High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth” 査読有り
5 巻 頁： 115501 (3 pages). 2012年
-
“Development of Spin-Polarized and Pulsed TEM “ 査読有り
371 巻 頁： 012004 2012年
-
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system 査読有り
Kazuaki Seki, Alexander, Shigeta Kozawa, Toru Ujihara, Patrick Chaudouët, Didier Chaussende, Yoshikazu Takeda
Journal of Crystal Growth 335 巻 ( 1 ) 頁： 94-99 2011年11月
-
High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method. 査読有り
Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda
Journal of Crystal Growth 318 巻 頁： pp 389-393. 2011年
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Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures 査読有り
Ryugo Tero, Gen Sazaki, Toru Ujihara, and Tsuneo Urisu
27 巻 頁： 9662-9665 2011年
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Development of spin-polarized transmission electron microscope 査読有り
M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka
298 巻 頁： 012016 2011年
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Polytype stability of 4H-SiC seed crystal on solution growth 査読有り
Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda
Materials Science Forum 679-680 巻 頁： pp 24-27 2011年
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Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method 査読有り
S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda
Materials Science Forum 679-680 巻 頁： pp 28-31 2011年
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Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness. 査読有り
Kazuma Tani, Shingo Fuchi, Ryota Mizutani, Toru Ujihara, Yoshikazu Takeda
Journal of Crystal Growth 318 巻 頁： pp 1113-1116 2011年
-
Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method 査読有り
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda and Hiroshi Ikuta
Appl. Phys. Express 4 巻 頁： 083102 (3 pages) 2011年
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Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy 査読有り
T. Kawaguchi , H. Uemura , T. Ohno , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta
Physica C: Superconductivity Volume 471 巻 ( Issues 21-22 ) 頁： pp. 1174-1176 2011年
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Status of the high brightness polarized electron source using transmission photocathode
N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,
298 巻 頁： 012017 2011年
-
Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction 査読有り
T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa
-Journal of Surface Science and Nanotechnology 8 巻 頁： 125-130 2010年
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Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth 査読有り
K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda
Mater. Sci. Forum 645-648 巻 頁： 363-366 2010年
-
Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun 査読有り
M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka
Appl. Phys. Express 3 巻 頁： 026601 2010年
-
Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices. 査読有り
X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda
J. Appl. Phys. 108 巻 ( 9 ) 頁： 094509 - 094509-6 2010年
-
TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth 査読有り
K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda
International Journal of Advanced Microscopy and Theoretical Calculations Letters 2 巻 頁： pp 242-243 2010年
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In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy 査読有り
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta
Appl. Phys. Lett. 97 巻 ( 4 ) 頁： 042509 2010年
-
High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers 査読有り
R. Tanaka, K. Seki, T. Ujihara, Y. Takeda
Mater. Sci Forum 615-617 巻 頁： 37-40 2009年
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High Brightness and High Polarization Electron Source Using Transmission Photocathode 査読有り
N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa
AIP Proceedings 1149 巻 頁： 1052-1056 2009年
-
Status of 200keV Beam Operations at Nagoya University 査読有り
M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto
AIP Proceedings 1149 巻 頁： 987-991 2009年
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Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation 査読有り
R. Tero, T. Ujihara and T. Urisu
Trans. Mater. Res. Soc. Jpn. 34 巻 ( 2 ) 頁： 183-188 2009年
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Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates 査読有り
Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda
Trans. Mater. Res. Soc. Jpn. 34 巻 ( 2 ) 頁： 217-220 2009年
-
Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System 査読有り
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda
Trans. Mater. Res. Soc. Jpn. 34 巻 ( 2 ) 頁： 179-182 2009年
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次世代のＳｉＣ高品質基板結晶作製技術 溶液法によりマイクロパイプ・基底面転位を低減 産学の連携を深め、実用化をめざす
宇治原徹, 竹田美和
Semiconductor FPD World 11 巻 頁： 55-58 2009年
-
ＳｉＣ単結晶の溶液成長
宇治原徹
Materials Stage 9 巻 頁： 46-49 2009年
-
Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy 査読有り
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta
Applied Physics Express 2 巻 頁： 093002 2009年
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Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates 査読有り
T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa
Phys. Status Solidi 8 巻 頁： 1785 2009年
-
*Stability Growth Condition for 3C-SiC Crystals by Solution Technique 査読有り
T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,
Mater. Sci Forum 600-603 巻 頁： 63-66 2009年
-
Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent 査読有り
R. Tanaka, T. Ujihara, Y. Takeda,
Mater. Sci Forum 600-603 巻 頁： 59-62 2009年
-
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method 査読有り
K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,
Mater. Sci Forum 615-617 巻 頁： 27-30 2009年
-
Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy 査読有り
Masaki Takihara, Takuji Takahashi, Toru Ujihara
Appl. Phys. Lett. 95 巻 頁： 19 2009年
-
High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers 査読有り
N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
J. Appl. Phys. 103 巻 頁： 64905 2008年
-
固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響 査読有り
手老龍吾, 宇治原徹, 宇理須恒雄,
表面 HYOMEN(SURFACE) 46 巻 頁： 287-299 2008年
-
Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy 査読有り
M. Takihara, T. Ujihara, T. Takahashi
Appl. Phys. Lett. 93 巻 頁： 021902 2008年
-
Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation 査読有り
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,
Langmuir 24 巻 頁： 10974-10980 2008年
-
Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface 査読有り
R. Tero, T. Ujihara, T. Urisu,
Langmuir 24 巻 頁： 11567-11576 2008年
-
Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer 査読有り
X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa
J. Crystal Gorwth 310 巻 頁： 5039-5043 2008年
-
" 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係,"
"前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範"
信学技報 108 巻 頁： 75-84 2008年
-
Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy 査読有り
S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda
J. Crystal Gorwth 310 巻 頁： 2239-2243 2008年
-
*Solution growth of high-quality 3C-SiC crystals 査読有り
T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda
J. Crystal Gorwth 310 巻 頁： 1438-1442 2008年
-
*Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate 査読有り
X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi11, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa
Appl. Phys. Express 1 巻 頁： 45002 2008年
-
Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation 査読有り
R. Tero, T. Ujihara, T. Urisu
Proceedings of SPIE 6769 巻 頁： 1-12 2007年
-
" Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大,"
宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和
信学技報 107 巻 頁： 29-34 2007年
-
"歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上,"
加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西 彊, 竹田美和
信学技報 107 巻 頁： 109-114 2007年
-
生体膜における相分離構造に関する研究
宇治原徹
まてりあ 46 巻 頁： 433 2007年
-
Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever 査読有り
M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi
Jpn. J. Appl. Phys. Part 1 46 巻 頁： 5548-5551 2007年
-
Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods 査読有り
N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda
J. Appl. Phys. 102 巻 頁： 24904 2007年
-
"Effect of Li doping on photoluminescence from Er, O-codoped GaAs" 査読有り
D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda
J. Crystal Growth 298 巻 頁： 69-72 2007年
-
Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method 査読有り
"T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda"
Appl. Phys. Lett. 89 巻 頁： 083110 2006年
-
Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique 査読有り
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima
Mater. Sci Forum 527-529 巻 頁： 119-122 2006年
-
分散量子ドット構造を利用した広帯域発光素子 査読有り
李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和
日本結晶成長学会誌 33 巻 頁： 106-110 2006年
-
Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever 査読有り
T. Igarashi, T. Ujihara, T. Takahashi
Jpn. J. Appl. Phys. Part 1 45 巻 頁： 2128-2131 2006年
-
"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" 査読有り
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima
Mater. Sci Forum 527-529 巻 頁： 115-118 2006年
-
Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon
"T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"
Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4) 頁： 272 2006年
-
GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化
宇治原徹, 陳 博, 安井健一, 酒井良介、山本将博、中西 彊、竹田美和
信学技報 106 巻 頁： 79-84 2006年
-
The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution 査読有り
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda
頁： p. 208-210 2006年
-
Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy 査読有り
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda
J. Crystal Growth 289 巻 頁： 89-95 2006年
-
Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study 査読有り
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films 476 巻 頁： 206-209 2005年
-
Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent 査読有り
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara
J. Appl. Phys. 98 巻 頁： 073708 2005年
-
メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御
宇治原 徹, 吉田義浩, 李祐植, 竹田美和
信学技報 105 巻 頁： 23-26 2005年
-
Structural properties of directionally grown polycrystalline SiGe for solar cells 査読有り
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
J.Cryst.Growth. 275 巻 頁： 467-473 2005年
-
Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams 査読有り
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Material & Product Technology. 22 巻 頁： 185-212 2005年
-
"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" 査読有り
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
J.Cryst.Growth. 273 巻 頁： 594-602 2005年
-
A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal 査読有り
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima
J.Cryst.Growth 276 巻 頁： 393-400 2005年
-
太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性 ―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― 査読有り
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 32 巻 頁： 291-296 2005年
-
Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM
T. Ujihara, K. Nakajima, Y. Takeda
Proc. 15th PVSEC 頁： 118-119 2005年
-
Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution 査読有り
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima
Mater. Sci Forum 483 巻 頁： 13-16 2005年
-
Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE 査読有り
Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda
頁： p112 2005年
-
Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer 査読有り
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima
J. Cryst. Growth 275 巻 頁： 1203-1207 2005年
-
Grain growth behaviors of polycrystalline silicon during melt growth processes 査読有り
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth 266 巻 頁： 441-448 2004年
-
Molten metal flux growth and properties of CrSi2 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS. 383 巻 頁： 319-321 2004年
-
Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer 査読有り
"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"
Appl. Phys. Lett. 84 巻 頁： 2802-2804 2004年
-
In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy 査読有り
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima
J. Crystal Growth 262 巻 頁： 536-542 2004年
-
Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate 査読有り
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima
J. Crystal Growth 262 巻 頁： 196-201 2004年
-
Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime 査読有り
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Thin Solid Films 451-452 巻 頁： 604-607 2004年
-
In-situ observations of melt growth behavior of polycrystalline silicon 査読有り
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth 262 巻 頁： 124 2004年
-
Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations 査読有り
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido
J. Crystal Growth 260 巻 頁： 372-383 2004年
-
On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates 査読有り
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima
Appl. Phys. Lett. 85 巻 頁： 1335-1337 2004年
-
Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe 査読有り
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima
Jpn. J. Appl. Phys. 43 巻 頁： L250-L252 2004年
-
Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution 査読有り
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa
J. Appl. Phys. 96 (2) 巻 頁： 1238-1241 2004年
-
Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation 査読有り
Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara
Jpn. J. Appl. Phys. Feb-46 巻 頁： L907 2004年
-
Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate 査読有り
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Appl. Surf. Sci. 224 巻 頁： 604-607 2004年
-
Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy 査読有り
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
J. Crystal Growth 266 巻 頁： 467-474 2004年
-
材料工学からの太陽電池研究
宇治原徹
まてりあ 43 巻 頁： 949-953 2004年
-
SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦
日本結晶成長学会誌 31 巻 頁： 29-37 2004年
-
Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy 査読有り
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum 457-460 巻 頁： 633-637 2004年
-
Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method 査読有り
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
頁： ? 2004年
-
TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent 査読有り
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁： 347-351 2004年
-
Solution growth of self standing 6H-SiC single crystal using metal solvent 査読有り
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum 457-460 巻 頁： 123-126 2004年
-
Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals 査読有り
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth 254 巻 頁： 188-195 2003年
-
High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁： L217-L219 2003年
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix 査読有り
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics 94 巻 頁： 916-920 2003年
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure 査読有り
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters 83 巻 頁： 1258-1260 2003年
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate 査読有り
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. 42 巻 頁： L232-L234 2003年
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature 査読有り
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 250 巻 頁： 298-304 2003年
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Hightemperature solution growth and characterization of chromium disilicide 査読有り
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. 42 巻 頁： 7292-7293 2003年
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Stacked Ge islands for photovoltaic applications 査読有り
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat 4 巻 頁： 367-370 2003年
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? 査読有り
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) 頁： 1241 - 1244 2003年
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Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure 査読有り
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima
( 3 ) 頁： 2746 - 2749 2003年
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Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application 査読有り
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima
( 1 ) 頁： 98-101 2003年
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Direct observations of crystal growth from silicon melt 査読有り
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima
( 1 ) 頁： 110 - 113 2003年
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Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution 査読有り
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima
( 1 ) 頁： 158 - 160 2003年
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications 査読有り
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido
Sol. Energy Mater. Sol. Cells 72 巻 頁： 93-100 2002年
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth 241 巻 頁： 387-394 2002年
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均一組成SiGeバルク結晶成長と関連する測定技術
宇治原徹, 我妻幸長, 宇佐美徳隆, 佐崎 元, 藤原航三, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 29 巻 ( 5 ) 頁： 339 2002年
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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution 査読有り
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
J. Appl. Phys. 92 巻 頁： 7098-7101 2002年
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Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Non-Cryst. Solids 312-314 巻 頁： 196-202 2002年
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In situ observation of crystal growth behavior from silicon melt 査読有り
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima
J. Crystal Growth 243 巻 頁： 275-282 2002年
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals 査読有り
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido
J. Crystal Growth 240 巻 頁： 370-381 2002年
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells 査読有り
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Sol. Energy Mater. Sol. Cells 73 巻 頁： 305-320 2002年
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Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution 査読有り
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
Jpn. J. Appl. Phys. 41 巻 頁： 4462-4465 2002年
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures 査読有り
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima
Mat. Sci. Eng. B 89 巻 頁： 364-367 2002年
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In-situ monitoring system of the position and temperature at the crystal-solution interface 査読有り
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth 236 巻 頁： 364-367 2002年
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*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions 査読有り
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth 242 巻 頁： 313-320 2002年
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Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties 査読有り
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima
頁： 1339-1342 2002年
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Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution 査読有り
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi
Jpn. J. Appl. Phys. 41 巻 頁： L37-L39 2002年
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In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity 査読有り
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima
J. Crystal Growth 234 巻 頁： 516-522 2002年
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Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique 査読有り
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima
頁： 408-411 2002年
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Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency 査読有り
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
頁： 247-249 2002年
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Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr 査読有り
T. Ujihara, K. Osamura
Mater. Sci. Eng. A 312 巻 頁： 128 2001年
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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method 査読有り
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama
Semicon. Sci. and Technol. 16 巻 頁： 699-703 2001年
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Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes 査読有り
K. Nakajima, T. Ujihara, and G. Sazaki
J. Appl. Phys. 89 巻 頁： 146-153 2001年
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Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface 査読有り
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima
Jpn. J. Appl. Phys. 44 巻 頁： 4141-4144 2001年
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Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system 査読有り
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima
J. Crystal Growth 224 巻 頁： 204-211 2001年
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Physical model for the evaluation of solid-liquid interfacial tension in silicon 査読有り
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima
J. Appl. Phys. 90 巻 頁： 750-755 2001年
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Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering 査読有り
T. Ujihara, K. Osamura
Acta Materialia 48 巻 頁： 1629-1637 2000年
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Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems 査読有り
K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki
In Mat. Res. Soc. Symp. Proc. 618 巻 頁： 285-290 2000年
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"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" 査読有り
K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami
J. Crystal Growth 220 巻 頁： 413-424 2000年
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SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications 査読有り
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima
Appl. Phys. Lett. 77 巻 頁： 3565-3567 2000年
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In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry 査読有り
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima
Jpn J. Appl. Phys 39 巻 頁： 5981-5982 2000年
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Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system 査読有り
K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki
Journal of Crystal Growth 209 巻 頁： 637-647 2000年
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"The excess free energy due to composition gradient for ferromagnetic alloys""" 査読有り
T. Ujihara, K. Osamura
Acta Materialia 47 巻 頁： 3041-3048 1999年
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Phase diagrams and stable structures for Sranski-Krastanov mode of III-V ternary quantum dots 査読有り
K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki
Journal of Korean Association of Crystal Growth 9 巻 頁： 387-395 1999年
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Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogenous of 10 T 査読有り
G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa
Jpn. J. Appl. Phys. 38 巻 頁： L842-L844 1999年
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Kinetics of Spinodal Decomposition with Composition Dependent Mobility 査読有り
T. Ujihara, K. Osamura
Proceeding of the International Conference on Solid-Solid Phase Transformation 99 巻 頁： 117-120 1999年
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Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys 査読有り
T. Ujihara, K. Osamura
Physical Review B58 巻 ( 17 ) 頁： 11371 1998年
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Al-Znの合金における相分解初期過程でのGPゾーンの形状異方性 査読有り
宇治原 徹, 長村 光造, 雨宮 慶幸
日本金属学会誌 62 巻 ( 2 ) 頁： 117 1998年
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Effect of Third Elements on Cu Precipitation on Fe-Cu Alloys 査読有り
Toru Ujihara, Kozo Osamura
Ann. Physiq. C3 巻 ( 20 ) 頁： 3 1995年
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Phase Decomposition in Fe-Cr-Mo Alloy 査読有り
Kozo Osamura Toru Ujihara, Hiroshi Okuda, Michihiro Furusaka
Proc. Int. Conf. On PTM'94 Solid-Solid Transformation in Inorganic Materials 頁： ",377" 1994年