Papers - USAMI Noritaka
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In-situ observations of melt growth behavior of polycrystalline silicon
K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima
Journal of Crystal Growth Vol. 262 page： 124-129 2004.2
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Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing Vol. 78 ( 1 ) page： 25-28 2004.1
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Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki and T. Shishido
Journal of Crystal Growth Vol. 260 page： 372-383 2004.1
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Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki and K. Nakajima
THIN SOLID FILMS Vol. 451 page： 604-607 2004
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
MATERIALS SCIENCE FORUM Vol. 457-460 page： 633-636 2004
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Molten metal flux growth and properties of CrSi2
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS Vol. 383 page： 319-321 2004
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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang and Y. Segawa
Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 95-98 2004
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Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y. Shiraki
Applied Physics Letters Vol. 84 ( 15 ) page： 2802-2804 2004
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High-temperature solution growth and characterization of chromium disilicide
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. H. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, Y. Murakami, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y. Yokoyama, S. Kohiki, Y. Kawazoe and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 42 ( 12 ) page： 7292-7293 2003.12
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In-plane strain fluctuation in strained-Si/SiGe heterostructures
K. Sawano, S. Koh, Y. Shiraki, N. Usami and K. Nakagawa
Applied Physics Letters Vol. 83 ( 21 ) page： 4339-4341 2003.11
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Optical properties of ZnO rods formed by metalorganic chemical vapor deposition
B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami
Applied Physics Letters Vol. 83 ( 8 ) page： 1635-1637 2003.8
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki
Applied Physics Letters Vol. 83 ( 6 ) page： 1258-1260 2003.8
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki and K. Nakajima
Journal of Applied Physics Vol. 94 ( 2 ) page： 916-920 2003.7
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 254 page： 188-195 2003.6
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Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 250 page： 298-304 2003.4
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In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition
B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3B ) page： L264-L266 2003.3
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High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L217-L219 2003.3
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Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L232-L234 2003.3
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Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition
B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 42 page： 2291-2295 2003
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Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures
K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 251 ( 1-4 ) page： 693-696 2003