Papers - USAMI Noritaka
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The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Journal of Ceramic Processing Research Vol. 12 page： S187-S192 2011.11
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Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima
Journal of Applied Physics Vol. 110 ( 8 ) 2011.10
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Formation mechanism of twin boundaries during crystal growth of silicon
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima
Scripta Materialia Vol. 65 ( 6 ) page： 556-559 2011.9
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Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 4 ( 9 ) 2011.9
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Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films
T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno
Science and Technology of Advanced Materials Vol. 12 ( 3 ) 2011.6
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Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells
N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 109 ( 8 ) 2011.4
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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki
Microelectronic Engineering Vol. 88 page： 465-468 2011.4
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In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami
Japanese Journal of Applied Physics Vol. 50 ( 4 ) 2011.4
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Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities
I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima
Journal of Applied Physics Vol. 109 ( 3 ) 2011.2
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Pattern formation mechanism of a periodically faceted interface during crystallization of Si
M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 24 ) page： 3670-3674 2010.12
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A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures
H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata
Journal of Physics-Condensed Matter Vol. 22 ( 47 ) 2010.12
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Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization
H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu
Journal of Crystal Growth Vol. 312 ( 22 ) page： 3257-3260 2010.11
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Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope
L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken
Applied Physics Letters Vol. 97 ( 21 ) 2010.11
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Room-temperature electroluminescence from Si microdisks with Ge quantum dots
J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki
Optics Express Vol. 18 ( 13 ) page： 13945-13950 2010.6
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Growth mechanism of the Si < 110 > faceted dendrite
K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda
Physical Review B Vol. 81 ( 22 ) 2010.6
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Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed
I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 7 ) page： 897-901 2010.3
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Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique
Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Journal of Applied Physics Vol. 107 ( 10 ) 2010.3
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Optical anisotropies of Si grown on step-graded SiGe(110) layers
R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Applied Physics Letters Vol. 96 ( 9 ) 2010.3
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Formation of uniaxially strained SiGe by selective ion implantation technique
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Thin Solid Films Vol. 518 ( 9 ) page： 2454-2457 2010.2
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Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth
N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 107 ( 1 ) 2010.1