Papers - USAMI Noritaka
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1781-1784 2013.12
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1756-1768 2013.12
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Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications
W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1765-1768 2013.12
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Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure
R.Numata, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1769-1772 2013.12
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Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy
R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1753-1755 2013.12
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Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
physica status solidi © Vol. 10 page： 1677-1680 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 page： 112302 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 ( 11 ) page： 112302 2013.10
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Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells
K.O.Hara, N.Usami
Journal of Applied Physics Vol. 114 page： 153101 2013.10
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Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu
Applied Physics Letters Vol. 103 page： 142113 2013.9
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Investigation of the open-circuit voltage in solar cells doped with quantum dots
T.Tayagaki, Y.Hoshi, N.Usami
Scientific Reports Vol. 3 page： 2703 2013.9
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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries
K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga
Applied Physics Express Vol. 6 page： 025505 2013.9
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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
Journal of Crystal Growth Vol. 378 page： 365-367 2013.9
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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature
XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 636-639 2013.9
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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique
K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 251-253 2013.9
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 201-204 2013.9
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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 198-200 2013.9
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Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates
K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 212-217 2013.9
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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 193-197 2013.9
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Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization
K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu
Ecs Journal of Solid State Science and Technology Vol. 2 ( 11 ) page： Q195-Q199 2013.8