Papers - USAMI Noritaka
-
Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration
N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1734-1737 2006.3
-
High-efficiency concave and conventional solar cell integration system using focused reflected light
K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1664-1667 2006.3
-
Intermixing of Ge and Si during exposure of GeH4 on Si
G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima
THIN SOLID FILMS Vol. 508 page： 163-165 2006
-
Strain field and related roughness formation in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
THIN SOLID FILMS Vol. 508 ( 1-2 ) page： 117-119 2006
-
Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells
A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima
Thin Solid Films Vol. 508 page： 402-405 2006
-
Directional growth method to obtain high quality polycrystalline silicon from its melt
K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
J. Cryst. Growth Vol. 292 page： 282-285 2006
-
Determination of lattice parameters of SiGe/Si(110) heterostructures
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami
Thin Solid Films Vol. 508 page： 132-135 2006
-
Thickness dependence of strain field distribution in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 page： 8445-8447 2005.12
-
Analysis of the dark-current density in solar cells based on multicrystalline SiGe
K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 11 ) page： 8019-8022 2005.11
-
Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition
N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 284 page： 57-64 2005.10
-
Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara
Journal of Applied Physics Vol. 98 ( 7 ) 2005.10
-
Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing Vol. 8 ( 6 ) page： 652-652 2005.10
-
Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions
K. Nakajima, K. Fujiwara, Y. Nose and N. Usami
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 7A ) page： 5092-5095 2005.7
-
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 280 page： 419-424 2005.7
-
Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 ( 1 ) page： 206-209 2005.4
-
A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal
Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima
Journal of Crystal Growth Vol. 276 page： 393-400 2005.4
-
Structural properties of directionally grown polycrystalline SiGe for solar cells
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 275 page： 467-473 2005.3
-
On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution
N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 2 ) page： 857-860 2005.2
-
Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami
Applied Physics Letters Vol. 86 ( 3 ) 2005.1
-
Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 273 page： 594-602 2005.1