Papers - USAMI Noritaka
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Exploring mc-Silicon Wafers: Utilizing Machine Learning to Enhance Wafer Quality Through Etching Studies Invited Reviewed International coauthorship
Madhesh Raji, Sreeja Balakrishnapillai Suseela, Srinivasan Manikkam, Gowthami Anbazhagan, Kentaro Kutsukake, Keerthivasan Thamotharan, Ramadoss Rajavel, Noritaka Usami, Ramasamy Perumalsamy
Crystal Research and Technology page： 2300279-1 - 2300279-12 2024.2
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Wang, HT; Kurokawa, Y; Zhang, JH; Gotoh, K; Liu, X; Miyamoto, S; Usami, N
APPLIED PHYSICS EXPRESS Vol. 17 ( 1 ) 2024.1
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Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation Reviewed International coauthorship
Keerthivasan, T; Anbu, G; Srinivasan, M; Kojima, T; Rath, JK; Usami, N; Vijayan, N; Madhesh, R; Balaji, C; Singh, M; Rao, C; Ramasamy, P
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol. 35 ( 1 ) 2024.1
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Pioneering Multicrystalline Informatics Invited Reviewed
Noritaka USAMI
JSAP Review 2024.1
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Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation Reviewed International journal
Hara Kosuke O., Takagaki Ryota, Arimoto Keisuke, Usami Noritaka
JOURNAL OF ALLOYS AND COMPOUNDS Vol. 966 2023.12
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Free-Standing Electrode and Fixed Surface Tiny Electrode Implemented Triboelectric Nanogenerator with High Instantaneous Current Reviewed International coauthorship
Haitao Wang, Yasuyoshi Kurokawa, Jia Wang, Wentao Cai, Jia-Han Zhang, Shinya Kato, Noritaka Usami
Small page： 2308531-1 - 2308531-9 2023.12
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Kenta Yamakoshi, Yutaka Ohno, Kentaro Kutsukake, Takuto Kojima, Tatsuya Yokoi, Hideto Yoshida, Hiroyuki Tanaka, Xin Liu, Hiroaki Kudo, Noritaka Usami
Advanced Materials page： 2308599-1 - 2308599-13 2023.12
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Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts Invited Reviewed International journal
Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani and Noritaka Usami
Nanotechnology 2023.11
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Nanoscale Size Control of Si Pyramid Texture for Perovskite/Si Tandem Solar Cells Enabling Solution‐Based Perovskite Top‐Cell Fabrication and Improved Si Bottom‐Cell Response Reviewed International journal
Yuqing Li, Hitoshi Sai, Calum McDonald, Zhihao Xu, Yasuyoshi Kurokawa, Noritaka Usami, Takuya Matsui
Advanced Materials Interfaces page： 2300504-1 - 2300504-9 2023.9
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Improvement of passivation performance of silicon nanocrystal/silicon oxide compound layer by two-step hydrogen plasma treatment Reviewed International journal
Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Solar Energy Materials and Solar Cells Vol. 262 page： 112358-1 - 112358-6 2023.9
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Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing Reviewed International journal
Kurokawa Yasuyoshi, Sato Kaisei, Shibata Keisuke, Kato Shinya, Miyamoto Satoru, Gotoh Kazuhiro, Itoh Takashi, Usami Noritaka
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 163 2023.8
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Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiO (x) /Si heterostructures by photoluminescence imaging: impact of metallization on passivation performance Reviewed International journal
Fukaya Shohei, Gotoh Kazuhiro, Matsui Takuya, Sai Hitoshi, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SK ) 2023.8
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Impact of B2H6 plasma treatment on contact resistivity in silicon heterojunction solar cells Reviewed International journal
Gotoh Kazuhiro, Ozaki Ryo, Morimura Motoo, Tanaka Aki, Iseki Yoshiko, Nakamura Kyotaro, Muramatsu Kazuo, Kurokawa Yasuyoshi, Ohshita Yoshio, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SK ) 2023.8
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3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon Reviewed International journal
Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami
APL Machine Learning Vol. 1 page： 036106-1 - 036106-9 2023.7
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A machine learning-based prediction of crystal orientations for multicrystalline materials Reviewed International journal
Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami
APL Machine Learning Vol. 1 page： 026113-1 - 026113-9 2023.5
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Fabrication of light trapping structures specialized for near-infrared light by nanoimprinting for the application to thin crystalline silicon solar cells Reviewed International journal
Kimata Yuto, Gotoh Kazuhiro, Miyamoto Satoru, Kato Shinya, Kurokawa Yasuyoshi, Usami Noritaka
DISCOVER NANO Vol. 18 ( 1 ) 2023.5
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Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal
Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami and Yasuyoshi Kurokawa
Japanese Journal of Applied Physics Vol. 62 ( SC ) page： SC1074 2023.4
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Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer Reviewed International journal
Haitao Wang, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Shinya Kato, Shigeru Yamada, Takashi Itoh and Noritaka Usami
Japanese Journal of Applied Physics Vol. 62 ( SC ) page： SC1032 2023.4
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The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation Reviewed International coauthorship International journal
T. Keerthivasan, Xin Liu, M. Srinivasan, Noritaka Usami, G. Anbu, G. Aravindan, P. Ramasamy
Journal of Crystal Growth Vol. 607 page： 127130-1 - 127130-7 2023.4
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Bayesian optimization of hydrogen plasma treatment in silicon quantum dot multilayer and application to solar cells Reviewed International journal
Fuga Kumagai, Kazuhiro Gotoh, Satoru Miyamoto, Shinya Kato, Kentaro Kutsukake, Noritaka Usami and Yasuyoshi Kurokawa
Discover Nano Vol. 43 2023.3
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Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films Reviewed International journal
H. Kojima, T. Nishihara, K. Gotoh, N. Usami, T. Hara, K. Nakamura, Y. Ohshita, and A. Ogura
ECS Journal of Solid State Science and Technology Vol. 12 ( 1 ) page： 015003 2023.1
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Influence of post-oxidizing treatment on passivation performance on the spin-coated titanium oxide films on crystalline silicon Reviewed International journal
Thin Solid Films Vol. 764 page： 139597 2023.1
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Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiOx/Si heterostructures by photoluminescence imaging: Impact of metallization on passivation performance Invited Reviewed International journal
Shohei Fukaya, Kazuhiro Gotoh, Takuya Matsui, Hitoshi Sai, Yasuyoshi Kurokawa, Noritaka Usami
Japanese Journal of Applied Physics 2023
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Impurity analysis of the effect of partial replacement of retort with an insulation material on mc-silicon grown in directional solidification furnace: Computational Modeling Reviewed International coauthorship International journal
T. Keerthivasan, X. Liu, M. Srinivasan, N. Usami, G. Aravindan, P. Ramasamy
Journal of Crystal Growth Vol. 599 page： 126892 2022.12
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Analysis of grain growth behavior of multicrystalline Mg2Si Reviewed International journal
Deshimaru Takumi, Yamakoshi Kenta, Kutsukake Kentaro, Kojima Takuto, Umehara Tsubasa, Udono Haruhiko, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SD ) 2022.11
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Nanopyramid Texture Formation by One-Step Ag-Assisted Solution Process for High-Efficiency Monocrystalline Si Solar Cells Reviewed International journal
Li Yuqing, Sai Hitoshi, Matsui Takuya, Xu Zhihao, Nguyen Van Hoang, Kurokawa Yasuyoshi, Usami Noritaka
SOLAR RRL Vol. 6 ( 11 ) 2022.9
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Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate Reviewed International journal
Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka and Noritaka Usami
Scientific Reports Vol. 12 ( 1 ) 2022.9
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Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model Reviewed International journal
Fukuda Yusuke, Kutsukake Kentaro, Kojima Takuto, Ohno Yutaka, Usami Noritaka
JOURNAL OF APPLIED PHYSICS Vol. 132 ( 2 ) 2022.7
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Estimation of Crystal Orientation of Grains on Polycrystalline Silicon Substrate by Recurrent Neural Network Reviewed International journal
Kato Hikaru, Kamibeppu Soichiro, Kojima Takuto, Matsumoto Tetsuya, Kudo Hiroaki, Takeuchi Yoshinori, Kutsukake Kentaro, Usami Noritaka
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING Vol. 17 ( 11 ) page： 1685 - 1687 2022.7
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Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal
Kurokawa Yasuyoshi, Yoshino Takamasa, Gotoh Kazuhiro, Miyamoto Satoru, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5
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Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2 Invited Reviewed International journal
Fujiwara Michinobu, Takahashi Kazuma, Nakagawa Yoshihiko, Gotoh Kazuhiro, Itoh Takashi, Kurokawa Yasuyoshi, Usami Noritaka
AIP ADVANCES Vol. 12 ( 4 ) 2022.4
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Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed
Yamashita Yudai, Takayanagi Kaori, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Suemasu Takashi
ACS APPLIED MATERIALS & INTERFACES Vol. 14 ( 11 ) page： 13828 - 13835 2022.3
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Effects of grain boundary structure and shape of the solid-liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal
Fukuda Yusuke, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka
CRYSTENGCOMM Vol. 24 ( 10 ) page： 1948 - 1954 2022.3
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Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed International journal
Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, and Noritaka Usami
ACS Omega Vol. 7 ( 8 ) page： 6665 - 6673 2022.3
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Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal
Tsubata Ryohei, Gotoh Kazuhiro, Matsumi Masashi, Wilde Markus, Inoue Tetsuya, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
ACS APPLIED NANO MATERIALS Vol. 5 ( 2 ) 2022.2
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Zn1-x Gex Oy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed International journal
Yudai Yamashita, Kaori Takayanagi, Kazuhiro Gotoh, Kaoru Toko, Noritaka Usami, and Takashi Suemasu
ACS Appl. Mater. Interfaces 2022.2
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Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal
Japanese Journal of Applied Physics 2022.2
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Effects of grain boundary structure and shape of the solid–liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal
Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami
CrystEngComm 2022.2
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Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal
ACS Appl. Nano Mater. Vol. 5 ( 2 ) page： 1820 - 187 2022.1
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Fractal dimension analogous scale-invariant derivative of Hirsch's index Reviewed International journal
Fujita Yuji, Usami Noritaka
APPLIED NETWORK SCIENCE Vol. 7 ( 1 ) 2022.1
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Fine Line Screen-Printing Aluminum for Front side p(+) Metallization of High Efficiency Solar Cells Reviewed International coauthorship International journal
Tsuji Kosuke, Suzuki Shota, Dhamrin Marwan, Adrian Adrian, Buck Thomas, Usami Noritaka
11TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2021) Vol. 2487 2022
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Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces Reviewed International journal
Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
APPLIED SURFACE SCIENCE Vol. 567 2021.11
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Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method Reviewed International journal
Nakagawa Yoshihiko, Takahashi Kazuma, Fujiwara Michinobu, Hara Kosuke O., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Suemasu Takashi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 10 ) 2021.10
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Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers International journal
Nakagawa Yuta, Gotoh Kazuhiro, Inoue Tetsuya, Kurokawa Yasuyoshi, Usami Noritaka
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 218 ( 19 ) 2021.10
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Bayesian Optimization of Passivating Contacts for Crystalline Silicon Solar Cells Invited Reviewed International journal
ECS Meeting Abstracts 2021.10
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Contact control of Al/Si interface of Si solar cells by local contact opening method Reviewed International coauthorship International journal
Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Adrian Adrian, Peng Zih-Wei, Buck Thomas, Usami Noritaka
MATERIALS CHEMISTRY AND PHYSICS Vol. 270 2021.9
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Application of Bayesian optimization for high-performance TiOx/SiOy/c-Si passivating contact Reviewed International journal
Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka
SOLAR ENERGY MATERIALS AND SOLAR CELLS Vol. 230 2021.9
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Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices Reviewed International journal
Nezasa Ryota, Gotoh Kazuhiro, Kato Shinya, Miyamoto Satoru, Usami Noritaka, Kurokawa Yasuyoshi
ENERGIES Vol. 14 ( 15 ) 2021.8
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Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning Reviewed International journal
Kutsukake Kentaro, Mitamura Kazuki, Usami Noritaka, Kojima Takuto
APPLIED PHYSICS LETTERS Vol. 119 ( 3 ) 2021.7
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Occurrence Prediction of Dislocation Regions in Photoluminescence Image of Multicrystalline Silicon Wafers Using Transfer Learning of Convolutional Neural Network Reviewed International journal
Kudo Hiroaki, Matsumoto Tetsuya, Kutsukake Kentaro, Usami Noritaka
IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES Vol. E104A ( 6 ) page： 857 - 865 2021.6
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Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry Reviewed International journal
Gotoh Kazuhiro, Miura Hiroyuki, Shimizu Ayako, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) 2021.5
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Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2 Reviewed International journal
Aonuki Sho, Xu Zhihao, Yamashita Yudai, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Filonov Andrew B., Nikitsiuk Siarhei A., Migas Dmitri B., Shohonov Denis A., Suemasu Takashi
THIN SOLID FILMS Vol. 724 2021.4
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Versatile fabrication of a passivation material, solute PEDOT:PSS, for a c-Si substrate using alcoholic solvents Reviewed International coauthorship International journal
Nguyen Van Hoang, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka
SUSTAINABLE ENERGY & FUELS Vol. 5 ( 3 ) page： 666 - 670 2021.2
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Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment Reviewed International journal
Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 14 ( 2 ) 2021.2
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Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal
Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Hara Tomohiko, Ozaki Ryo, Morimura Motoo, Shimizu Ayako, Nakamura Kyotaro, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 2 ) 2021.2
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Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects International coauthorship International journal
Patricia Krenckel , Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe and Noritaka Usami
Crystals Vol. 11 ( 2 ) page： 1 - 10 2021.2
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Origin of recombination activity of non-coherent sigma 3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots Reviewed International journal
Ohno Yutaka, Tamaoka Takehiro, Yoshida Hideto, Shimizu Yasuo, Kutsukake Kentaro, Nagai Yasuyoshi, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 14 ( 1 ) page： . 2021.1
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Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers Reviewed International journal
Gotoh Kazuhiro, Mochizuki Takeya, Hojo Tomohiko, Shibayama Yuki, Kurokawa Yasuyoshi, Akiyama Eiji, Usami Noritaka
CURRENT APPLIED PHYSICS Vol. 21 page： 36 - 42 2021.1
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Realization of the Crystalline Silicon Solar Cell Using Nanocrystalline Transport Path in Ultra-thin Dielectrics for Reinforced Passivating Contact
Tsubata Ryohei, Gotoh Kazuhiro, Inoue Tetsuya, Kurokawa Yasuyoshi, Usami Noritaka
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) page： 908 - 911 2021
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The impact of highly excessive PbI2 on the correlation of MAPbI(3) perovskite morphology and carrier lifetimes Reviewed International coauthorship International journal
Van Hoang Nguyen, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka
JOURNAL OF MATERIALS CHEMISTRY C Vol. 8 ( 41 ) page： 14481 - 14489 2020.11
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Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots Reviewed International journal
Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 13 ( 10 ) 2020.10
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Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation Reviewed International journal
Mitamura Kazuki, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka
JOURNAL OF APPLIED PHYSICS Vol. 128 ( 12 ) 2020.9
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Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask Reviewed International coauthorship International journal
Nguyen V. H., Novikov A., Shaleev M., Yurasov D., Semma M., Gotoh K., Kurokawa Y., Usami N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 114 2020.8
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Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation Reviewed International journal
Hara Kosuke O., Takizawa Shuhei, Yamanaka Junji, Usami Noritaka, Arimoto Keisuke
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 113 2020.7
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Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells Reviewed International coauthorship International journal
Xu Zhihao, Sato Takuma, Benincasa Louise, Yamashita Yudai, Deng Tianguo, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Filonov Andrew B., Migas Dmitri B., Shohonov Denis A., Suemasu Takashi
JOURNAL OF APPLIED PHYSICS Vol. 127 ( 23 ) 2020.6
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Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction Reviewed International journal
Semma Masanori, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
AIP ADVANCES Vol. 10 ( 6 ) 2020.6
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Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal
Aonuki Sho, Yamashita Yudai, Sato Takuma, Xu Zhihao, Gotoh Kazuhiro, Toko Kaoru, Terai Yoshikazu, Usami Noritaka, Suemasu Takashi
APPLIED PHYSICS EXPRESS Vol. 13 ( 5 ) page： . 2020.5
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Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells Reviewed International journal
Kimura Yuki, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 13 ( 5 ) 2020.5
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Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers Reviewed International coauthorship International journal
Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 535 2020.4
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3D visualization of growth interfaces in cast Si ingot using inclusions distribution Reviewed International coauthorship International journal
Kamibeppu Soichiro, Krenckel Patricia, Troetschler Theresa, Hess Adam, Riepe Stephan, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 535 2020.4
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Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering Reviewed International journal
Nemoto T., Matsuno S., Sato T., Gotoh K., Mesuda M., Kuramochi H., Toko K., Usami N., Suemasu T.
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality Reviewed International journal
Horiba Issei, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal
Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Ozaki Ryo, Nakamura Kyotaro, Morimura Motoo, Naitou Shimako, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal
Kobayashi Hisayoshi, Akaishi Ryushiro, Kato Shinya, Kurosawa Masashi, Usami Noritaka, Kurokawa Yasuyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation Reviewed International journal
Yoshino Takamasa, Nakagawa Yoshihiko, Kimura Yuki, Fujiwara Michinobu, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Fabrication of group IV semiconductor alloys on Si substrate applying Al paste with screen-printing Reviewed International journal
Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Dhamrin Marwan, Miyamoto Satoru, Hainey Mel Forrest Jr., Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Effects of evaporation vapor composition and post-annealing conditions on carrier density of undoped BaSi2 evaporated films Reviewed International journal
Kimura Yuki, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications Reviewed International coauthorship International journal
Mai Thi Kieu Lien, Usami Noritaka
INTERNATIONAL JOURNAL OF MODERN PHYSICS B Vol. 34 ( 8 ) 2020.3
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Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates International coauthorship
Hainey Mel Jr., Zhou Eddie (Chenhui), Viguerie Loic, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 533 2020.3
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Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition Reviewed International journal
Miyagawa Shinsuke, Gotoh Kazuhiro, Ogura Shohei, Wilde Markus, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Vol. 38 ( 2 ) 2020.3
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Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts Reviewed International journal
Nakagawa Yuta, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Vol. 38 ( 2 ) 2020.3
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Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy International coauthorship
Montes A., Eijt S. W. H., Tian Y., Gram R., Schut H., Suemasu T., Usami N., Zeman M., Serra J., Isabella O.
JOURNAL OF APPLIED PHYSICS Vol. 127 ( 8 ) 2020.2
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Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer Reviewed International journal
Akaishi Ryushiro, Kitazawa Kohei, Gotoh Kazuhiro, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi
NANOSCALE RESEARCH LETTERS Vol. 15 ( 1 ) 2020.2
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Work function of indium oxide thin films on p-type hydrogenated amorphous silicon
Semma Masanori, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) page： 124 - 127 2020
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Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots
Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) page： 2340 - 2340 2020
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Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts
Tsubata Ryohei, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) page： 969 - 972 2020
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Application of artificial neural network to optimize sensor positions for accurate monitoring: an example with thermocouples in a crystal growth furnace Reviewed International journal
Boucetta Abderahmane, Kutsukake Kentaro, Kojima Takuto, Kudo Hiroaki, Matsumoto Tetsuya, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 12 ( 12 ) 2019.12
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Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures
Gotoh Kazuhiro, Mochizuki Takeya, Kurokawa Yasuyoshi, Usami Noritaka
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 216 ( 22 ) 2019.11
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Mossbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer Reviewed
Yoshida Yutaka, Watanabe Tomio, Ino Yuji, Kobayashi Masashi, Takahashi Isao, Usami Noritaka
HYPERFINE INTERACTIONS Vol. 240 ( 1 ) 2019.9
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Hydrogen concentration at a-Si:H/c-Si heterointerfaces-The impact of deposition temperature on passivation performance
Gotoh Kazuhiro, Wilde Markus, Kato Shinya, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka
AIP ADVANCES Vol. 9 ( 7 ) 2019.7
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Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen International coauthorship
Xu Zhihao, Shohonov Denis A., Filonov Andrew B., Gotoh Kazuhiro, Deng Tianguo, Honda Syuta, Toko Kaoru, Usami Noritaka, Migas Dmitri B., Borisenko Victor E., Suemasu Takashi
PHYSICAL REVIEW MATERIALS Vol. 3 ( 6 ) 2019.6
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Evidence of solute PEDOT:PSS as an efficient passivation material for fabrication of hybrid c-Si solar cells Reviewed International journal
Van Hoang Nguyen, Kato Shinya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
SUSTAINABLE ENERGY & FUELS Vol. 3 ( 6 ) page： 1448 - 1454 2019.6
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Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures International coauthorship
Ota Yushi, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 4 ) 2019.4
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Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste Reviewed International journal
Fukami Shogo, Nakagawa Yoshihiko, Hainey Mel E. Jr., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Nakahara Masahiro, Dhamrin Marwan, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 4 ) 2019.4
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Local Structure of High Performance TiOx Electron-Selective Contact Revealed by Electron Energy Loss Spectroscopy Reviewed
Mochizuki Takeya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Yamamoto Takahisa, Usami Noritaka
ADVANCED MATERIALS INTERFACES Vol. 6 ( 3 ) 2019.2
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Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy Reviewed
Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2
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3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science Reviewed
Hayama Yusuke, Matsumoto Tetsuya, Muramatsu Tetsuro, Kutsukake Kentaro, Kudo Hiroaki, Usami Noritaka
SOLAR ENERGY MATERIALS AND SOLAR CELLS Vol. 189 page： 239-244 2019.1
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Fabrication of Si1-xGex layer on Si substrate by Screen-Printing
Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Fukami Shogo, Dhamrin Manvan, Usami Noritaka
MRS ADVANCES Vol. 4 ( 13 ) page： 749 - 754 2019
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Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts Reviewed
Lee Hyunju, Kamioka Takefumi, Usami Noritaka, Ohshita Yoshio
MRS ADVANCES Vol. 4 ( 13 ) page： 769-775 2019
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Significant improvement on electrical properties of BaSi2 due to atomic H passivation by radio-frequency plasma Reviewed
Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Toko Kaoru, Usami Noritaka, Suemasu Takashi
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) page： 12-14 2019
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Fine Line Al Printing on Narrow Point Contact Opening for Front Side Metallization Reviewed
Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Peng Zih-Wei, Buck Thomas, Usami Noritaka
9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019) Vol. 2147 2019
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Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift Reviewed International coauthorship
Takeda K., Yoneda J., Otsuka T., Nakajima T., Delbecq M. R., Allison G., Hoshi Y., Usami N., Itoh K. M., Oda S., Kodera T., Tarucha S.
NPJ QUANTUM INFORMATION Vol. 4 2018.10
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Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots Reviewed
Muramatsu Tetsuro, Hayama Yusuke, Kutsukake Kentaro, Maeda Kensaku, Matsumoto Tetsuya, Kudo Hiroaki, Fujiwara Kozo, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 499 page： 62-66 2018.10
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Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates Reviewed
Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka
THIN SOLID FILMS Vol. 663 page： 14-20 2018.10
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Activation mechanism of TiOx passivating layer on crystalline Si
Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 11 ( 10 ) 2018.10
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Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed
Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells
Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed
Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization
Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks
Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Photovoltaic Science and Engineering FOREWORD
Matsubara Koji, Yamada Akira, Minemoto Takashi, Itoh Takashi, Arafune Koji, Fujiwara Hiroyuki, Hayase Shuzi, Hiramoto Masahiro, Hishikawa Yoshihiro, Imaizumi Mitsuru, Ito Masakazu, Kaizuka Izumi, Kato Takuya, Komoto Keiichi, Kubo Takaya, Maitani Masato, Masuda Atsushi, Miyajima Shinsuke, Morita Kengo, Negami Takayuki, Ogimoto Kazuhiko, Ohdaira Keisuke, Ohshita Yoshio, Okada Yoshitaka, Okamoto Tamotsu, Osaka Itaru, Sai Hitoshi, Sakurai Takeaki, Shen Qing, Shibata Hajima, Sugaya Takeyoshi, Sugiyama Mutsumi, Takamoto Tatsuya, Tanaka Tooru, Terakawa Akira, Ueda Yuzuru, Usami Noritaka, Wakao Shinji, Yagi Shuhei, Yamanaka Sanshiro, Yoshida Yuji, Yoshita Masahiro
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering
Cheng Xuemei, Gotoh Kazuhiro, Nakagawa Yoshihiko, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 491 page： 120-125 2018.6
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Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma
Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Takabe Ryota, Toko Kaoru, Usami Noritaka, Suemasu Takashi
AIP ADVANCES Vol. 8 ( 5 ) 2018.5
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BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration
Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation
N.M. Shaalan, K.O. Hara, C.T. Trinh, Y. Nakagawa, and N. Usami
Materials Science in Semiconductor Processing Vol. 76 page： 37-41 2018.3
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Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation
Shaalan N. M., Hara K. O., Trinh C. T., Nakagawa Y., Usami N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 76 page： 37 - 41 2018.3
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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
D. V. Yurasov, A. V. Novikov, M. V. Shaleev, N. A. Baidakova, E. E. Morozova, E. V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, and N. Usami
Materials Science in Semiconductor Processing ( 75 ) page： 143-148 2018.3
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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 75 page： 143 - 148 2018.3
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BaSi2 formation mechanism in thermally-evaporated films and its application to reducing oxygen impurity concentration
K.O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami
Japanese Journal of Applied Physics ( 57 ) page： 04FS01 2018.2
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A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%
Yoneda Jun, Takeda Kenta, Otsuka Tomohiro, Nakajima Takashi, Delbecq Matthieu R., Allison Giles, Honda Takumu, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo
NATURE NANOTECHNOLOGY Vol. 13 ( 2 ) page： 102 - + 2018.2
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Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications
Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka
MRS ADVANCES Vol. 3 ( 25 ) page： 1435-1442 2018
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Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p(+)-Si Diodes
Hara Kosuke O., Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka
MRS ADVANCES Vol. 3 ( 25 ) page： 1387-1392 2018
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Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films
Kurokawa Yasuyoshi, Nezasa Ryota, Kato Shinya, Miyazaki Hisashi, Takahashi Isao, Usami Noritaka
MRS ADVANCES Vol. 3 ( 25 ) page： 1419-1426 2018
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Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy
Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Kurokawa Yasuyoshi, Miyazaki Seiichi, Yamamoto Takahisa, Usami Noritaka
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 3896-3899 2018
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Photoresponsivity improvement of BaSi2 epitaxial films by capping with hydrogenated amorphous Si layers by radio-frequency H-2 plasma
Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Toko Kaoru, Usami Noritaka, Suemasu Takashi
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 1871-1873 2018
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Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell
Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Usami Noritaka
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 3097-3101 2018
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Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials
Nezasa R., Kurokawa Y., Usami N.
2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) page： . 2018
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Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells
Cui Min, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 2118-2120 2018
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Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases
Akaishi Ryushiro, Kitazawa Kouhei, Ono Satoshi, Gotoh Kazuhiro, Ichihara Eiji, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 2852-2856 2018
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Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering
Cheng Xuemei, Gotoh Kazuhiro, Mochizuki Takeya, Usami Noritaka
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) page： 1986-1990 2018
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Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation
Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 72 page： 93-98 2017.12
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Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Baidakova N. A., Verbus V. A., Morozova E. E., Novikov A. V., Skorohodov E. V., Shaleev M. V., Yurasov D. V., Hombe A., Kurokawa Y., Usami N.
SEMICONDUCTORS Vol. 51 ( 12 ) page： 1542 - 1546 2017.12
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Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates
Y. Arisawa, Y. Hoshi, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami
Materials Science in Semiconductor Processing ( 70 ) page： 127-132 2017.11
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Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates
Arisawa You, Hoshi Yusuke, Sawano Kentarou, Yamanaka Junji, Arimoto Keisuke, Yamamoto Chiaya, Usami Noritaka
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 127 - 132 2017.11
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Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
Arimoto Keisuke, Nakazawa Hiroki, Mitsui Shohei, Utsuyama Naoto, Yamanaka Junji, Hara Kosuke O., Usami Noritaka, Nakagawa Kiyokazu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 11 ) 2017.11
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Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation
K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami
Materials Science in Semiconductor Processing ( 72 ) page： 93-98 2017.10
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Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets
Deng Tianguo, Gotoh Kazuhiro, Takabe Ryota, Xu Zhihao, Yachi Suguru, Yamashita Yudai, Toko Kaoru, Usami Noritaka, Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH Vol. 475 page： 186-191 2017.10
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Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation
Hara Kosuke O., Suzuki Shintaro, Usami Noritaka
THIN SOLID FILMS Vol. 639 page： 7 - 11 2017.10
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Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K. O. Hara, N. Usami, and K. Nakagawa
Semiconductor Science and Technology ( 32 ) page： 114002 2017.9
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Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka
THIN SOLID FILMS Vol. 636 page： 546-551 2017.8
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Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation
K. O. Hara, S. Suzuki, N. Usami
Thin Solid Films ( 639 ) page： 7-11 2017.8
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Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures
Kurokawa Yasuyoshi, Aonuma Osamu, Tayagaki Takeshi, Takahashi Isao, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 8 ) 2017.8
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Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed
Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 08MA02 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells
M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 page： 7 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 ( 7 ) page： 2886-2892 2017.7
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On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads
Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal
Iwata Taisho, Takahashi Isao, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires
Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka
SOLAR ENERGY MATERIALS AND SOLAR CELLS Vol. 166 page： 39 - 44 2017.7
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Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami
Thin Solid Films ( 646 ) page： 546-551 2017.6
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Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets
T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu
Journal of Crystal Growth ( 475 ) page： 186-191 2017.6
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique
Y. Arisawa, K. Sawano, and N. Usami
Journal of Crystal Growth Vol. 468 page： 601-604 2017.6
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Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects
Hayama Yusuke, Takahashi Isao, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 610 - 613 2017.6
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells
G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami
Journal of Crystal Growth Vol. 468 page： 620-624 2017.6
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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa
Journal of Crystal Growth Vol. 468 page： 625-629 2017.6
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Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique
Y. Hayama, I. Takahashi, and N. Usami
Energy Procedia Vol. 127 page： 610-613 2017.6
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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
Arimoto Keisuke, Yagi Sosuke, Yamanaka Junji, Hara Kosuke O., Sawano Kentarou, Usami Noritaka, Nakagawa Kiyokazu
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 625 - 629 2017.6
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique
Arisawa You, Sawano Kentarou, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 601 - 604 2017.6
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells
Babu G. Anandha, Takahashi Isao, Muramatsu Tetsurou, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 620 - 624 2017.6
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On the growth mechanism of multicrystalline silicon ingots with small grains by using single layer silicon beads
T. Muramatsu, I. Takahashi, G. Anandha babu, and N. Usami
Japanese Journal of Applied Physics ( 56 ) page： 075502 2017.6
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Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation
T. Iwata, I. Takahashi, and N. Usami
Japanese Journal of Applied Physics ( 56 ) page： 075501 2017.6
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Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells
Bayu M. Emha, Cham Thi Trinh, Takabe Ryota, Yachi Suguru, Toko Kaoru, Usami Noritaka, Suemasu Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5
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Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties
Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5
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Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells
Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5
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Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates
Suhara Takamichi, Murata Koichi, Navabi Aryan, Hara Kosuke O., Nakagawa Yoshihiko, Cham Thi Trinh, Kurokawa Yasuyoshi, Suemasu Takashi, Wang Kang L., Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5
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Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties Reviewed
C. T. Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 05DB06 2017.4
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Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates Reviewed
T. Suhara, K. Murata, A. Navabi, K. O. Hara, Y. Nakagawa, C. T. Trinh, Y. Kurokawa, T. Suemasu, K. L. Wang, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 05DB05 2017.4
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Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells Reviewed
K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 05DB04 2017.4
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Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films
Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells
Tayagaki Takeshi, Furuta Daichi, Aonuma Osamu, Takahashi Isao, Hoshi Yusuke, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires
V. H. Nguyen, P. Sichanugrist, S. Kato, and N. Usami
Solar Energy Materials and Solar Cells Vol. 166 page： 39-44 2017.3
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Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films Reviewed
K. O. Hara, C. T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami
Japanese Journal of Applied Physics Vol. 56 page： 04CS07 2017.3
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Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells Reviewed
M. E. Bayu, C. T. Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu
Jpn. J. Appl. Phys. ( 56 ) page： 05DB01 2017.2
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Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells Reviewed
T.Tayagaki, D.Furuta, O.Aonuma, I.Takahashi, Y.Hoshi, Y.Kurokawa, and N.Usami
Japanese Journal of Applied Physics Vol. 56 page： 04CS01 2017.1
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Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications
Suemasu Takashi, Usami Noritaka
JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 50 ( 2 ) page： 1-18 2017.1
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TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon Reviewed
J. Yamanaka, N. Usami, S. Amtablian, A. Fave, M. Lemiti, C. Yamamoto, and K. Nakagawa
Journal of Materials Science and Chemical Engineering Vol. 5 page： 26-34 2017.1
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Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation
K. O. Hara, C. T. Trinh, Y. Nakagawa, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami
JJAP Conference Proceedings ( 5 ) page： 11202 2017
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Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization
J. A. Wibowo, I. Takahashi, K. O. Hara, and N. Usami
JJAP Conference Proceedings ( 5 ) page： 11201 2017
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Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects
Y.Hayama, I.Takahashi, and N.Usami
Journal of Crystal Growth Vol. 468 page： 625-629 2017
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Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells
N.A. Baidakova, V.A. Verbus, E.E. Morozova, A.V. Novikov, E.V. Skorohodov, M.V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami
Semiconductors Vol. 51 ( 12 ) page： 1542-1546 2017
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Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts
K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami
Energy Procedia Vol. 124 page： 598-603 2017
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Controlling impurity distribution in quasi-mono crystalline Si ingot by seed manipulation for artificially controlled defects technique
Hayama Yusuke, Takahashi Isao, Usami Noritaka
7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017 Vol. 124 page： 734-739 2017
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Development of spin-coated copper iodide on silicon for use in hole-selective contacts
Gotoh Kazuhiro, Cui Min, Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka
7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017 Vol. 124 page： 598-603 2017
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Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells
Gotoh Kazuhiro, Cui Min, Thanh Nguyen Cong, Koyama Koichi, Takahashi Isao, Kurokawa Yasuyoshi, Matsumura Hideki, Usami Noritaka
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) page： 1765-1768 2017
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Solar Cells Application of p-type poly-Si Thin Film by Aluminum Induced Crystallization
Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) page： 1794-1796 2017
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Numerical simulation and performance optimization of perovskite solar cell
Nanduri Sai Naga Raghuram, Siddiki Mahbube K., Chaudhry Ghulam M., Alharthi Yahya Z.
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) page： 1018 - 1021 2017
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Exploring the Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications Reviewed
T. Suemasu and N. Usami
Journal of Physics D: Applied Physics Vol. 50 page： 023001 2016.11
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Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization
S.Tutashkonko, N.Usami
Thin Solid Films Vol. 616 page： 213-219 2016.10
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Growth direction control of dendrite crystals in parallel direction to realize high-quality multicrystalline silicon ingot
T.Hiramatsu, I.Takahashi, S.Matsushima, and N.Usami
Jpn. J. Appl. Phys. Vol. 55 page： 091302 2016.8
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Light-induced recovery of effective carier lifetime in boron-doped Czochralski silicon at room temperature Reviewed
H.Ichikawaa, I.Takahashi, N.Usami, K.Shirasawa, H.Takato
Energy Procedia Vol. 92 page： 801-807 2016.8
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Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation .
C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami
Materials Research Express Vol. 3 ( 7 ) page： 076204 2016.7
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Evidence for efficient passivation of vertical silicon nanowires by anodic aluminum oxide
V.H.Nguyen, S.Kato, and N.Usami
Solar Energy Materials and Solar Cells Vol. 157 page： 393-398 2016.7
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Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities Reviewed
S.Joonwichien, I.Takahashi, K.Kutsukake, and N.Usami
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS 2016.5
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p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%
D.Tsukahara, S.Yachi, H.Takeuchi, R.Takabe, W.Du, M.Baba, Y.Li, K.Toko, N.Usami, and T.Suemasu
APPLIED PHYSICS LETTERS Vol. 108 page： 152101 2016.4
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Modulated surface nanostructures for enhanced light trapping and reduced surface reflection of crystalline silicon solar cells Reviewed
T.Tayagaki, Y.Hoshi, Y.Hirai, Y.Matsuo, and N.Usami
Japanese Journal of Applied Physics ( 55 ) page： 52302 2016.4
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Simple vacuum evaporation route to BaSi2 thin films for solar cell applications Reviewed
K.O.Hara, Y.Nakagawa, T.Suemasu, and N. Usami
Energy Procedia Vol. 141 page： 27-31 2016.3
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On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation Reviewed
Y.Nakagawaa, K.O.Hara, T.Suemasu, and N.Usami
Energy Procedia Vol. 141 page： 23-26 2016.3
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Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer
G.Anandha babu, I.Takahashi, S.Matsushima, and N.Usami
Journal of Crystal Growth Vol. 441 page： 124-130 2016.2
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Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells
M.M.Rahman, A.Higo, H.Sekhar, M.E.Syazwan, Y.Hoshi, N.Usami, and S.Samukawa
Japanese Journal of Applied Physics ( 55 ) page： 032303 2016.2
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Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed
K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko, T. Suemasu, and N.Usami
Thin Solid Films Vol. 603 page： 218-223 2016.2
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Compressively strained Si/Si1_xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed
Y.Hoshi, Y.Arisawa, K. Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, and N.Usami
Japanese Journal of Applied Physics Vol. 55 page： 031302 2016.2
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Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
M.M.Rahman, M-Y, Lee, Y-C,Tsai, A. Higo, H.Sekhar, M.Igarashi, M.E.Syazwan, Y.Hoshi, K.Sawano, N.Usami, Y.Li, and S.Samukawa
PROGRESS IN PHOTOVOLTAICS ( 28 ) page： 774-780 2015.12
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Structural and electrical characterizations of crack-free BaSi2 thin filmsfabricated by thermal evaporation
K.O.Hara, J.Yamanaka, K. Arimoto, K.Nakagawa, T.Suemasu, N.Usami
Thin Solid Films Vol. 595 page： 68-72 2015.10
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed
I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami
Applied Physics Express Vol. 8 page： 105501 2015.9
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Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed
V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai
Japanese Journal of Applied Physics Vol. 54 page： 095003 2015.8
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Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KD11 2015.7
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Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed
I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA06 2015.7
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Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed
Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KC03 2015.7
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Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed
V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA02 2015.6
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Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed
O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA01 2015.6
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Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed
K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka
Applied Physics Letters Vol. 106 page： 222102 2015.6
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Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot
I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami
Journal of Applied Physics ( 117 ) page： 095701 2015.3
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Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed
K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 07JE02 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 ( 3 ) page： 030306 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 page： 030306 2015.2
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Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics ( 54 ) page： 04DR03 2015.1
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Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed
K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu
INTERNATIONAL JOURNAL OF PHOTOENERGY ( 2015 ) page： 790242 2015.1
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バルク結晶成長のこの10年 Reviewed
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
Vol. 42 ( 1 ) page： pp.64-68 2015
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Light trapping by direction-dependent light transmission in front-surface photonic nanostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Applied Physics Express Vol. 7 page： 122301 2014.11
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Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency
T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami
Japanese Journal of Applied Physics ( 53 ) page： 110312 2014.10
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Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu Vol. 116 page： 123709 2014.9
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Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS ( 22 ) page： 726-732 2014.7
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Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique
M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu
Japanese Journal of Applied Physics ( 53 ) page： 078004 2014.6
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed
R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu
( 115 ) page： 193510 2014.5
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Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 368-371 2014.4
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Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties
Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 338-341 2014.4
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Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
R.Numata, K.Toko, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 147-150 2014.4
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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 143-146 2014.4
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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu
Thin Solid Films Vol. 557 page： 90-93 2014.4
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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 ( 9 ) page： 094301 2014.3
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Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method
K.Nakajima, K.Morishita, R.Murai, N.Usami
Journal of Crystal Growth Vol. 389 page： 112-119 2014.3
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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CrystEngComm Vol. 16 ( 13 ) page： 2578-2583 2014.2
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Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange
R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH03 2014.2
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Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates
K.Nakazawa, K.Toko, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH01 2014.2
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Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed
R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04ER04 2014.2
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Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots
T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami
Optics Express Vol. 22 ( 52 ) page： A225-A232 2014.1
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Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu
Applied Physics Letters Vol. 104 ( 2 ) page： 022106 2014.1
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Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays
T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa
Journal of Synchrotron Radiation Vol. 21 page： 161-164 2014.1
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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains
K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga
Ieee Journal of Photovoltaics Vol. 4 ( 1 ) page： 84-87 2014.1
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1781-1784 2013.12
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1756-1768 2013.12
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Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications
W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1765-1768 2013.12
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Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure
R.Numata, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1769-1772 2013.12
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Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy
R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1753-1755 2013.12
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Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
physica status solidi © Vol. 10 page： 1677-1680 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 page： 112302 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 ( 11 ) page： 112302 2013.10
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Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells
K.O.Hara, N.Usami
Journal of Applied Physics Vol. 114 page： 153101 2013.10
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Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu
Applied Physics Letters Vol. 103 page： 142113 2013.9
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Investigation of the open-circuit voltage in solar cells doped with quantum dots
T.Tayagaki, Y.Hoshi, N.Usami
Scientific Reports Vol. 3 page： 2703 2013.9
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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries
K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga
Applied Physics Express Vol. 6 page： 025505 2013.9
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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
Journal of Crystal Growth Vol. 378 page： 365-367 2013.9
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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature
XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 636-639 2013.9
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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique
K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 251-253 2013.9
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 201-204 2013.9
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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 198-200 2013.9
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Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates
K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 212-217 2013.9
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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 193-197 2013.9
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Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization
K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu
Ecs Journal of Solid State Science and Technology Vol. 2 ( 11 ) page： Q195-Q199 2013.8
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Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties
Y.Hoshi, WG.Pan, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) page： UNSP 080202 2013.8
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Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Crystal Growth & Design Vol. 13 ( 9 ) page： 3908-3912 2013.7
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
K.Toko, N.Fukata, K.Nakazawa, M.Kurosawa, N.Usami, M.Miyao, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 372 page： 189-192 2013.6
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Effect of Ga content and growth temperature on Cu(In,Ga)Se2 thin film deposited on heat-resistant glass substrates
T.Higuchi, N.Usami, T.Minemoto
Phys.Status Solidi C Vol. 10 page： 1035-1037 2013.5
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Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells
M.Igarashi, WG.Hu, M.M.Rahman, N.Usami, S.Samukawa
NANOSCALE RESEARCH LETTERS Vol. 8 page： 228 2013.5
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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu,
THIN SOLID FILMS Vol. 534 page： 470-473 2013.5
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Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si
S.Joonwichien, S.Matsushima, N.Usami
JOURNAL OF APPLIED PHYSICS Vol. 113 ( 13 ) page： 133503 2013.4
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Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CRYSTAL GROWTH & DESIGN Vol. 13 ( 4 ) page： 1767-1770 2013.4
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In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications
M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K.Toko, N.Usami, T.Suemasu
APPLIED PHYSICS LETTERS Vol. 102 ( 11 ) page： 112107 2013.3
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Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
K. Nakamura, M. Baba, M. A. Khan, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko and T. Suemasu
Journal of Applied Physics Vol. 113 ( 5 ) 2013.2
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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto and I. Yonenaga
Applied Physics Express Vol. 6 ( 2 ) 2013.2
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On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process
N. Usami, M. N. Jung and T. Suemasu
Journal of Crystal Growth Vol. 362 page： 16-19 2013.1
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Effects of formation of mini-bands in two-dimensional array of silicon nanodisks with SiC interlayer for quantum dot solar cells
M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, Y. Tamura, M. E. Syazwan, N. Usami and S. Samukawa
Nanotechnology Vol. 24 ( 1 ) 2013.1
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Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy
K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano and Y. Shiraki
Journal of Crystal Growth Vol. 362 page： 276-281 2013.1
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Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)
R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramirez-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter and K. Hingerl
Applied Physics Letters Vol. 102 ( 1 ) 2013.1
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Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi and T.Suemasu
Applied Physics Letters Vol. 103 page： 142113 2013
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Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells
K.O. Hara, N.Usami
Journal of Applied Physics Vol. 114 ( 15 ) page： 153101 2013
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Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities
X. J. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki
Ieee Journal of Selected Topics in Quantum Electronics Vol. 18 ( 6 ) page： 1830-1838 2012.12
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Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells
T. Tayagaki, N. Usami and Y. Kanemitsu
Japanese Journal of Applied Physics Vol. 51 ( 10 ) 2012.10
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Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
A. Okada, K. Toko, K. O. Hara, N. Usami and T. Suemasu
Journal of Crystal Growth Vol. 356 page： 65-69 2012.10
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Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
K. Ohdaira, K. Sawada, N. Usami, S. Varlamov and H. Matsumura
Japanese Journal of Applied Physics Vol. 51 ( 10 ) 2012.10
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Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate
K. O. Hara, N. Usami, K. Toh, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 10 ) 2012.10
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Growth velocity and grain size of multicrystalline solar cell silicon
I. Brynjulfsen, K. Fujiwara, N. Usami and L. Amberg
Journal of Crystal Growth Vol. 356 page： 17-21 2012.10
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Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko and T. Suemasu
Journal of Applied Physics Vol. 112 ( 8 ) 2012.10
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Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 9 ) 2012.9
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Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation
T. Tayagaki, N. Usami, W. G. Pan, Y. Hoshi, K. Ooi and Y. Kanemitsu
Applied Physics Letters Vol. 101 ( 13 ) 2012.9
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Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 mu m on Si(111)
M. Baba, K. Nakamura, W. J. Du, M. A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 9 ) 2012.9
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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao and T. Suemasu
Applied Physics Letters Vol. 101 ( 7 ) 2012.8
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Quantum dot solar cells using 2-dimensional array of 6.4-nm-diameter silicon nanodisks fabricated using bio-templates and neutral beam etching
M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, N. Usami and S. Samukawa
Applied Physics Letters Vol. 101 ( 6 ) 2012.8
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Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities
X. J. Xu, T. Tsuboi, T. Chiba, N. Usami, T. Maruizumi and Y. Shiraki
Optics Express Vol. 20 ( 13 ) page： 14714-14721 2012.6
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Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami and T. Suemasu
Journal of Crystal Growth Vol. 348 ( 1 ) page： 75-79 2012.6
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Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals
N. Usami, W. G. Pan, T. Tayagaki, S. T. Chu, J. S. Li, T. H. Feng, Y. Hoshi and T. Kiguchi
Nanotechnology Vol. 23 ( 18 ) 2012.5
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Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
T. Tsuboi, X. J. Xu, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki
Applied Physics Express Vol. 5 ( 5 ) 2012.5
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Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki and K. M. Itoh
Applied Physics Letters Vol. 100 ( 22 ) 2012.5
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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu
Journal of Crystal Growth Vol. 345 ( 1 ) page： 16-21 2012.4
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Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress
K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami
Journal of Crystal Growth Vol. 344 ( 1 ) 2012.4
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Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN
T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers
W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu
Applied Physics Letters Vol. 100 ( 15 ) 2012.4
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Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 50 ( 12 ) 2011.12
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The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Journal of Ceramic Processing Research Vol. 12 page： S187-S192 2011.11
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Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima
Journal of Applied Physics Vol. 110 ( 8 ) 2011.10
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Formation mechanism of twin boundaries during crystal growth of silicon
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima
Scripta Materialia Vol. 65 ( 6 ) page： 556-559 2011.9
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Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 4 ( 9 ) 2011.9
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Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films
T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno
Science and Technology of Advanced Materials Vol. 12 ( 3 ) 2011.6
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Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells
N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 109 ( 8 ) 2011.4
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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki
Microelectronic Engineering Vol. 88 page： 465-468 2011.4
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In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami
Japanese Journal of Applied Physics Vol. 50 ( 4 ) 2011.4
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Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities
I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima
Journal of Applied Physics Vol. 109 ( 3 ) 2011.2
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Pattern formation mechanism of a periodically faceted interface during crystallization of Si
M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 24 ) page： 3670-3674 2010.12
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A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures
H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata
Journal of Physics-Condensed Matter Vol. 22 ( 47 ) 2010.12
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Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization
H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu
Journal of Crystal Growth Vol. 312 ( 22 ) page： 3257-3260 2010.11
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Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope
L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken
Applied Physics Letters Vol. 97 ( 21 ) 2010.11
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Room-temperature electroluminescence from Si microdisks with Ge quantum dots
J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki
Optics Express Vol. 18 ( 13 ) page： 13945-13950 2010.6
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Growth mechanism of the Si < 110 > faceted dendrite
K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda
Physical Review B Vol. 81 ( 22 ) 2010.6
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Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed
I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 7 ) page： 897-901 2010.3
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Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique
Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Journal of Applied Physics Vol. 107 ( 10 ) 2010.3
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Optical anisotropies of Si grown on step-graded SiGe(110) layers
R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Applied Physics Letters Vol. 96 ( 9 ) 2010.3
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Formation of uniaxially strained SiGe by selective ion implantation technique
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Thin Solid Films Vol. 518 ( 9 ) page： 2454-2457 2010.2
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Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth
N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 107 ( 1 ) 2010.1
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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation
Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa and Y. Shiraki
Thin Solid Films Vol. 518 page： S162-S164 2010.1
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Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
I. Takahashi, N. Usami, K. Kutsukake, K. Morishita and K. Nakajima
Japanese Journal of Applied Physics Vol. 49 ( 4 ) 2010
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Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami
Applied Physics Express Vol. 3 ( 2 ) 2010
-
Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate
S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 49 ( 4 ) 2010
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Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase
Japanese Journal of Applied Physics Vol. 49 2010
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On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Applied Physics Express Vol. 3 ( 9 ) 2010
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Growth behavior of faceted Si crystals at grain boundary formation
K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 1 ) page： 19-23 2009.12
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Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth
M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima
Physical Review B Vol. 80 ( 17 ) 2009.11
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Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
R. Nihei, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 48 ( 11 ) 2009.11
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Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Solid-State Electronics Vol. 53 ( 10 ) page： 1135-1143 2009.10
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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Letters Vol. 95 2009.9
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Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Journal of Crystal Growth Vol. 311 ( 14 ) page： 3581-3586 2009.7
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Microstructures of Si multicrystals and their impact on minority carrier diffusion length
H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima
Acta Materialia Vol. 57 ( 11 ) page： 3268-3276 2009.6
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Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Applied Physics Express Vol. 2 ( 5 ) 2009.5
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Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Vol. 48 ( 2 ) 2009.2
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Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance
K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 105 ( 4 ) 2009.2
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Floating cast method to realize high-quality Si bulk multicrystals for solar cells
Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 311 ( 2 ) page： 228-231 2009.1
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Resonant photoluminescence from Ge self-assembled dots in optical microcavities
J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 page： 883-887 2009
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Local control of strain in SiGe by ion-implantation technique
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 3 ) page： 806-808 2009
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Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 3 ) page： 825-828 2009
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Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth Vol. 311 page： 819-824 2009
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Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth Vol. 311 page： 809-813 2009
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Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates
K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth Vol. 311 page： 814-818 2009
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Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt
Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Crystal Growth Vol. 310 ( 24 ) page： 5248-5251 2008.12
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Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima
Japanese Journal of Applied Physics Vol. 47 ( 12 ) page： 8790-8792 2008.12
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Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 12 ) 2008.12
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Room-temperature light-emission from Ge quantum dots in photonic crystals
J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 125-127 2008.11
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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials
N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 14-16 2008.11
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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 254-256 2008.11
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Thin Solid Films Vol. 517 ( 1 ) page： 235-238 2008.11
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Vacancy formation during oxidation of silicon crystal surface
M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga
Applied Physics Letters Vol. 93 ( 10 ) 2008.9
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Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 8 ) 2008.8
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Growth mechanism of Si-faceted dendrites
K. Fujiwara, K. Maeda, N. Usami and K. Nakajima
Physical Review Letters Vol. 101 ( 5 ) 2008.8
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Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals
N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima
Applied Physics Express Vol. 1 ( 7 ) 2008.7
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Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy
M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 47 ( 6 ) page： 4630-4633 2008.6
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In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
Acta Materialia Vol. 56 ( 11 ) page： 2663-2668 2008.6
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On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures
K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 1 ) 2008.1
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Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 40 ( 6 ) page： 2122-2124 2008
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Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films
K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura
THIN SOLID FILMS Vol. 516 ( 5 ) page： 600-603 2008
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Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method
R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami
Jpn. J. Appl. Phys. Vol. 47 page： 2927-2931 2008
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Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis
N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 102 ( 10 ) 2007.11
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High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition
K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 46 ( 11 ) page： 7198-7203 2007.11
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Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks
J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami
Applied Physics Letters Vol. 91 ( 1 ) 2007.7
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SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio
S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima
Applied Physics Letters Vol. 91 2007.7
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Formation mechanism of parallel twins related to Si-facetted dendrite growth
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima
Scripta Materialia Vol. 57 ( 2 ) page： 81-84 2007.7
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Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells
N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima
Applied Physics Letters Vol. 90 ( 18 ) 2007.4
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Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution
M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 5 ) 2007.3
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Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 6 ) 2007.3
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Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface
S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima
Crystal Growth & Design Vol. 7 ( 2 ) page： 439-444 2007.2
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Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima
Materials Transactions Vol. 48 ( 2 ) page： 143-147 2007.2
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Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells
N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima
Solar Energy Materials and Solar Cells Vol. 91 page： 123-128 2007.1
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Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti
Applied Physics Letters Vol. 90 ( 3 ) 2007.1
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 301 page： 339-342 2007
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth Vol. 301 page： 343-348 2007
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Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation
M. Suezawa, K. Koilma, A. Kasuya, I. Yonenaga and N. Usami
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 12 ) page： 9162-9166 2006.12
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Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature
J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami and Y. Nakata
Applied Physics Letters Vol. 89 ( 20 ) 2006.11
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Magnetotransport properties of Ge channels with extremely high compressive strain
K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami and K. Nakagawa
Applied Physics Letters Vol. 89 ( 16 ) 2006.10
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Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting
K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
Acta Materialia Vol. 54 ( 12 ) page： 3191-3197 2006.7
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High sensitive imaging of atomic arrangement of Ge clusters buried in a Si crystal by X-ray fluorescence holography
S. Kusano, S. Nakatani, K. Sumitani, T. Takahashi, Y. Yoda, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 6A ) page： 5248-5253 2006.6
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Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate
N. Usami, Y. Nose, K. Fujiwara and K. Nakajima
Applied Physics Letters Vol. 88 2006.5
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Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration
N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1734-1737 2006.3
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High-efficiency concave and conventional solar cell integration system using focused reflected light
K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1664-1667 2006.3
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Intermixing of Ge and Si during exposure of GeH4 on Si
G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima
THIN SOLID FILMS Vol. 508 page： 163-165 2006
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Strain field and related roughness formation in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
THIN SOLID FILMS Vol. 508 ( 1-2 ) page： 117-119 2006
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Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells
A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima
Thin Solid Films Vol. 508 page： 402-405 2006
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Directional growth method to obtain high quality polycrystalline silicon from its melt
K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
J. Cryst. Growth Vol. 292 page： 282-285 2006
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Determination of lattice parameters of SiGe/Si(110) heterostructures
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami
Thin Solid Films Vol. 508 page： 132-135 2006
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Thickness dependence of strain field distribution in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 page： 8445-8447 2005.12
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Analysis of the dark-current density in solar cells based on multicrystalline SiGe
K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 11 ) page： 8019-8022 2005.11
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Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition
N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 284 page： 57-64 2005.10
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Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara
Journal of Applied Physics Vol. 98 ( 7 ) 2005.10
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Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing Vol. 8 ( 6 ) page： 652-652 2005.10
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Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions
K. Nakajima, K. Fujiwara, Y. Nose and N. Usami
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 7A ) page： 5092-5095 2005.7
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Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 280 page： 419-424 2005.7
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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 ( 1 ) page： 206-209 2005.4
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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal
Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima
Journal of Crystal Growth Vol. 276 page： 393-400 2005.4
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Structural properties of directionally grown polycrystalline SiGe for solar cells
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 275 page： 467-473 2005.3
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On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution
N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 2 ) page： 857-860 2005.2
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Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami
Applied Physics Letters Vol. 86 ( 3 ) 2005.1
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Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 273 page： 594-602 2005.1
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Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration
N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 44 ( 24-27 ) page： L778-L780 2005
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Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 8 ( 1-3 ) page： 177-180 2005
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Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method
K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 44 ( 42-45 ) page： L1316-L1319 2005
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Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Materials & Product Technology Vol. 22 page： 185-212 2005
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Changes in elastic deformation of strained Si by microfabrication
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing Vol. 8 page： 181-185 2005
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Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing Vol. 79 ( 7 ) page： 1711-1714 2004.11
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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami
Applied Physics Letters Vol. 85 ( 13 ) page： 2514-2516 2004.9
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On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima
Applied Physics Letters Vol. 85 ( 8 ) page： 1335-1337 2004.8
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Low-temperature growth of ZnO nanostructure networks
B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami
Journal of Applied Physics Vol. 96 ( 1 ) page： 340-343 2004.7
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Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process
B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma
Journal of Physical Chemistry B Vol. 108 page： 10899-10902 2004.7
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Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa
Journal of Applied Physics Vol. 96 ( 2 ) page： 1238-1241 2004.7
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Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation
Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 43 ( 7A ) page： L907-L909 2004.7
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Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition
N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 43 ( 7A ) page： 4110-4113 2004.7
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Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy
T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 266 ( 4 ) page： 467-474 2004.6
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Grain growth behaviors of polycrystalline silicon during melt growth processes
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
Journal of Crystal Growth Vol. 266 ( 4 ) page： 441-448 2004.6
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Formation of highly aligned ZnO tubes on sapphire (0001) substrates
B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma
Applied Physics Letters Vol. 84 ( 20 ) page： 4098-4100 2004.3
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Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition
B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami and Y. Segawa
Thin Solid Films Vol. 449 page： 12-19 2004.2
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Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe
N. Usami, W. G. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 43 ( 2B ) page： L250-L252 2004.2
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In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 262 page： 536-542 2004.2
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Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, J. T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, Y. Takahashi, E. Matsubara, T. Sakurai and K. Nakajima
Journal of Crystal Growth Vol. 262 page： 196-201 2004.2
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In-situ observations of melt growth behavior of polycrystalline silicon
K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima
Journal of Crystal Growth Vol. 262 page： 124-129 2004.2
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Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing Vol. 78 ( 1 ) page： 25-28 2004.1
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Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki and T. Shishido
Journal of Crystal Growth Vol. 260 page： 372-383 2004.1
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Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki and K. Nakajima
THIN SOLID FILMS Vol. 451 page： 604-607 2004
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
MATERIALS SCIENCE FORUM Vol. 457-460 page： 633-636 2004
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Molten metal flux growth and properties of CrSi2
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS Vol. 383 page： 319-321 2004
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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang and Y. Segawa
Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 95-98 2004
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Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y. Shiraki
Applied Physics Letters Vol. 84 ( 15 ) page： 2802-2804 2004
-
High-temperature solution growth and characterization of chromium disilicide
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. H. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, Y. Murakami, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y. Yokoyama, S. Kohiki, Y. Kawazoe and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 42 ( 12 ) page： 7292-7293 2003.12
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In-plane strain fluctuation in strained-Si/SiGe heterostructures
K. Sawano, S. Koh, Y. Shiraki, N. Usami and K. Nakagawa
Applied Physics Letters Vol. 83 ( 21 ) page： 4339-4341 2003.11
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Optical properties of ZnO rods formed by metalorganic chemical vapor deposition
B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami
Applied Physics Letters Vol. 83 ( 8 ) page： 1635-1637 2003.8
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki
Applied Physics Letters Vol. 83 ( 6 ) page： 1258-1260 2003.8
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki and K. Nakajima
Journal of Applied Physics Vol. 94 ( 2 ) page： 916-920 2003.7
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 254 page： 188-195 2003.6
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Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 250 page： 298-304 2003.4
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In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition
B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3B ) page： L264-L266 2003.3
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High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L217-L219 2003.3
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Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L232-L234 2003.3
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Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition
B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 42 page： 2291-2295 2003
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Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures
K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 251 ( 1-4 ) page： 693-696 2003
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3D atomic imaging of SiGe system by X-ray fluorescence holography
K. Hayashi, Y. Takahashi, E. Matsubara, K. Nakajima and N. Usami
J. Materials Science: Materials in Electronics Vol. 14 page： 459-462 2003
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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Journal of Applied Physics Vol. 92 ( 12 ) page： 7098-7101 2002.12
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In situ observations of crystal growth behavior of silicon melt
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi
Journal of Crystal Growth Vol. 243 ( 2 ) page： 275-282 2002.8
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Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 41 ( 7A ) page： 4462-4465 2002.7
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Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 242 page： 313-320 2002.7
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Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)
N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara
Materials Transactions Vol. 43 ( 7 ) page： 1533-1536 2002.7
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 73 ( 3 ) page： 305-320 2002.7
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 241 ( 3 ) page： 387-394 2002.6
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido
Journal of Crystal Growth Vol. 240 page： 373-381 2002.5
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 72 page： 93-100 2002.4
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In-situ monitoring system of the position and temperature at the crystal-solution interface
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 236 page： 125-131 2002.3
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Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 41 ( 1AB ) page： L37-L39 2002.1
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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 234 page： 516-522 2002.1
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Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization
A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki
Applied Physics Letters Vol. 80 ( 3 ) page： 488-490 2002.1
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Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands
M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA Vol. 66 page： 161-164 2002
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 89 page： 364-367 2002
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Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
JOURNAL OF NON-CRYSTALLINE SOLIDS Vol. 312 page： 196-202 2002
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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 89 page： 62-65 2002
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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama
Semiconductor Science and Technology Vol. 16 ( 8 ) page： 699-703 2001.8
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Physical model for the evaluation of solid-liquid interfacial tension in silicon
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima
Journal of Applied Physics Vol. 90 ( 2 ) page： 750-755 2001.7
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Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties
K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry
Applied Physics Letters Vol. 79 ( 3 ) page： 344-346 2001.7
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Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 40 ( 6A ) page： 4141-4144 2001.6
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Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 224 page： 204-211 2001.4
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The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures
N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami and M. Y. Valakh
PHYSICS OF LOW-DIMENSIONAL STRUCTURES Vol. 41337 page： 295-301 2001
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Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands
N. Usami, M. Miura, Y. Ito, Y. Araki, K. Nakajima and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 227 page： 782-785 2001
-
Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures
K. Ohdaira, N. Usami, K. Ota and Y. Shiraki
PHYSICA E Vol. 11 ( 2-3 ) page： 68-71 2001
-
Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies
K. Nakajima, T. Ujihara, G. Sazaki and N. Usami
Journal of Crystal Growth Vol. 220 ( 4 ) page： 413-424 2000.12
-
SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa and S. Kodama
Applied Physics Letters Vol. 77 ( 22 ) page： 3565-3567 2000.11
-
In situ measurement of composition in high-temperature solutions by X-ray fluorescence spectrometry
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 39 ( 10 ) page： 5981-5982 2000.10
-
Drastic increase of the density of Ge islands by capping with a thin Si layer
N. Usami, M. Miura, Y. Ito, Y. Araki and Y. Shiraki
Applied Physics Letters Vol. 77 ( 2 ) page： 217-219 2000.7
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Modification of the growth mode of Ge on Si by buried Ge islands
N. Usami, Y. Araki, Y. Ito, M. Miura and Y. Shiraki
Applied Physics Letters Vol. 76 ( 25 ) page： 3723-3725 2000.6
-
Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands
N. Usami and Y. Shiraki
THIN SOLID FILMS Vol. 369 page： 108-111 2000
-
Microscopic probing of localized excitons in quantum wells
N. Usami, K. Ota, K. Ohdaira, Y. Shiraki, T. Hasche, V. Lyssenko and K. Leo
INSTITUTE OF PHYSICS CONFERENCE SERIES ( 166 ) page： 99-102 2000
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Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer
H. Takamiya, M. Miura, N. Usami, T. Hattori and Y. Shiraki
THIN SOLID FILMS Vol. 369 ( 1-2 ) page： 84-87 2000
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Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices
K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller
THIN SOLID FILMS Vol. 369 ( 1-2 ) page： 405-408 2000
-
Formation of relaxed SiGe films on Si by selective epitaxial growth
K. Kawaguchi, N. Usami and Y. Shiraki
Thin Solid Films Vol. 369 page： 126-129 2000
-
Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
K. Arimoto, N. Usami and Y. Shiraki
Physica E Vol. 8 page： 323-327 2000
-
Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
K. Arimoto, T. Sugita, N. Usami and Y. Shiraki
Physical Review B Vol. 60 ( 19 ) page： 13735-13739 1999.11
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Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures
N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura
Physical Review B Vol. 60 ( 3 ) page： 1879-1883 1999.7
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Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction
Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki
Journal of Materials Synthesis and Processing Vol. 7 ( 3 ) page： 205-207 1999.5
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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
E. S. Kim, N. Usami and Y. Shiraki
Semiconductor Science and Technology Vol. 14 ( 3 ) page： 257-265 1999.3
-
Optical characterization of strain-induced structural modification in SiGe-based heterostructures
N. Usami, K. Leo and Y. Shiraki
Journal of Applied Physics Vol. 85 ( 4 ) page： 2363-2366 1999.2
-
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications
L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Journal of Electronic Materials Vol. 28 ( 2 ) page： 98-104 1999.2
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Photoluminescence study of InP/GaP highly strained quantum wells
T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki
INSTITUTE OF PHYSICS CONFERENCE SERIES Vol. 162 page： 511-516 1999
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Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy
S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito
Japanese Journal of Applied Physics Part 2-Letters Vol. 37 ( 12B ) page： L1493-L1496 1998.12
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Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates
K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki
Semiconductor Science and Technology Vol. 13 ( 11 ) page： 1277-1283 1998.11
-
Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates
J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki
Journal of Physics-Condensed Matter Vol. 10 ( 39 ) page： 8643-8652 1998.10
-
Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice
Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki
Acta Physica Sinica-Overseas Edition Vol. 7 ( 8 ) page： 608-612 1998.8
-
Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si
L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Ieee Electron Device Letters Vol. 19 ( 8 ) page： 273-275 1998.8
-
Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
E. S. Kim, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 72 page： 1617-1619 1998.3
-
In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure
N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura
PHYSICA E Vol. 2 page： 883-886 1998
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Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates
N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe
Superlattices and Microstructures Vol. 23 ( 2 ) page： 395-400 1998
-
Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures
K. Uchida, N. Miura, T. Sugita, F. Issiki, N. Usami and Y. Shiraki
PHYSICA B Vol. 251 page： 909-913 1998
-
Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates
N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki
PHYSICA E Vol. 2 page： 137-141 1998
-
Photoluminescence from pure-Ge/pure-Si neighboring confinement structure
N. Usami, M. Miura, H. Sunamura and Y. Shiraki
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 16 page： 1710-1712 1998
-
New strain-relieving microstructure in pure-Ge/Si short-period superlattices
H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 16 ( 3 ) page： 1595-1598 1998
-
Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure
T. Ohta, N. Usami, F. Issiki and Y. Shiraki
Superlattices and Microstructures Vol. 23 ( 1 ) page： 97-102 1998
-
Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells
K. Ota, N. Usami and Y. Shiraki
PHYSICA E Vol. 2 ( 1-4 ) page： 573-577 1998
-
Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization
T. Sugita, N. Usami and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 188 ( 1-4 ) page： 323-327 1998
-
Spectroscopic study of Si-based quantum wells with neighbouring confinement structure
N. Usami, Y. Shiraki and S. Fukatsu
Semiconductor Science and Technology Vol. 12 ( 12 ) page： 1596-1602 1997.12
-
Optical investigation of growth mode of Ge thin films on Si(110) substrates
J. Arai, A. Ohga, T. Hattori, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 71 ( 6 ) page： 785-787 1997.8
-
Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure
T. Ohta, N. Usami, F. Issiki and Y. Shiraki
Semiconductor Science and Technology Vol. 12 ( 7 ) page： 881-887 1997.7
-
Interfacial roughness of Si1-xGex/Si multilayer structures on Si(111) probed by x-ray scattering
P. M. Reimer, J. H. Li, Y. Yamaguchi, O. Sakata, H. Hashizume, N. Usami and Y. Shiraki
Journal of Physics-Condensed Matter Vol. 9 ( 22 ) page： 4521-4533 1997.6
-
Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells
J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga and T. Hattori
Applied Physics Letters Vol. 70 ( 22 ) page： 2981-2983 1997.6
-
Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates
D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki
Journal of Applied Physics Vol. 81 ( 8 ) page： 3484-3489 1997.4
-
Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands
E. S. Kim, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 70 ( 3 ) page： 295-297 1997.1
-
Oxidation of strained Si in a microwave electron cyclotron resonance plasma
L. K. Bera, M. Mukhopadhyay, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Applied Physics Letters Vol. 70 ( 2 ) page： 217-219 1997.1
-
Electrical properties of oxides grown on strained Si using microwave N2O plasma
L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Applied Physics Letters Vol. 70 ( 1 ) page： 66-68 1997.1
-
Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)
H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu
THIN SOLID FILMS Vol. 294 ( 1-2 ) page： 336-339 1997
-
Luminescence study on Ge islands as stressors on Si1-xGex/Si quantum well
E. S. Kim, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 175 page： 519-523 1997
-
Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures
N. Usami, W. G. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki
Applied Physics Letters Vol. 68 ( 23 ) page： 3221-3223 1996.6
-
Ultrashort lifetime photocarriers in Ge thin films
N. Sekine, K. Hirakawa, F. Sogawa, Y. Arakawa, N. Usami, Y. Shiraki and T. Katoda
Applied Physics Letters Vol. 68 ( 24 ) page： 3419-3421 1996.6
-
Role of heterointerface on enhancement of no-phonon luminescence in Si-based neighboring confinement structure
N. Usami, Y. Shiraki and S. Fukatsu
Applied Physics Letters Vol. 68 ( 17 ) page： 2340-2342 1996.4
-
Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)
H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu
Applied Physics Letters Vol. 68 ( 13 ) page： 1847-1849 1996.3
-
Exciton diffusion dynamics in SiGe/Si quantum wells on a V-groove patterned Si substrate
N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu
SOLID-STATE ELECTRONICS Vol. 40 page： 733-736 1996
-
Formation and optical properties of SiGe/Si quantum structures
Y. Shiraki, H. Sunamura, N. Usami and S. Fukatsu
APPLIED SURFACE SCIENCE Vol. 102 page： 263-271 1996
-
Rectangular AlGaAs/AlAs quantum wires using spontaneous vertical quantum wells
W. G. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 35 ( 2B ) page： 1214-1216 1996
-
Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates
W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
INSTITUTE OF PHYSICS CONFERENCE SERIES Vol. 145 page： 925-930 1996
-
Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer
S. Fukatsu, N. Usami and Y. Shiraki
J. Vac. Sci. Technol Vol. 14 page： 2387-2390 1996
-
CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY
V. Higgs, E. C. Lightowlers, N. Usami, T. Mine, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 67 ( 12 ) page： 1709-1711 1995.9
-
DYNAMICS OF EXCITON DIFFUSION IN SIGE QUANTUM-WELLS ON A V-GROOVE PATTERNED SI SUBSTRATE
N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu
Physical Review B Vol. 52 ( 7 ) page： 5132-5135 1995.8
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ENHANCEMENT OF RADIATIVE RECOMBINATION IN SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE
N. Usami, F. Issiki, D. K. Nayak, Y. Shiraki and S. Fukatsu
Applied Physics Letters Vol. 67 page： 524-526 1995.7
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ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY
H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu
Applied Physics Letters Vol. 66 ( 22 ) page： 3024-3026 1995.5
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STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX/SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES
N. Usami, H. Sunamura, T. Mine, S. Fukatsu and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 150 page： 1065-1069 1995
-
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure
N. Usami, Y. Shiraki and S. Fukatsu
JOURNAL OF CRYSTAL GROWTH Vol. 157 page： 27-30 1995
-
Photoluminescence investigation on growth mode changeover of Ge on Si(100)
H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 157 ( 1-4 ) page： 265-269 1995
-
Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen
G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki and T. Hattori
JOURNAL OF CRYSTAL GROWTH Vol. 157 ( 1-4 ) page： 36-39 1995
-
CRUCIAL ROLE OF SI BUFFER LAYER QUALITY IN THE PHOTOLUMINESCENCE EFFICIENCY OF STRAINED SI1-XGEX/SI QUANTUM-WELLS
T. Mine, N. Usami, Y. Shiraki and S. Fukatsu
J. Cryst. Growth Vol. 150 ( 1-4 ) page： 1033-1037 1995
-
Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices
J. Y. Kim, S. Fukatsu, N. Usami and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 157 ( 1-4 ) page： 40-44 1995
-
CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ON V-GROOVE PATTERNED SI SUBSTRATES
V. Higgs, E. C. Lightowlers, N. Usami, Y. Shiraki, T. Mine and S. Fukatsu
J. Cryst. Growth Vol. 150 page： 1070-1073 1995
-
ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY
G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 65 ( 23 ) page： 2975-2977 1994.12
-
PHOTOLUMINESCENCE OF SI/SIGE/SI QUANTUM-WELLS ON SEPARATION BY OXYGEN IMPLANTATION SUBSTRATE
D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 64 ( 18 ) page： 2373-2375 1994.5
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OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE
N. Usami, T. Mine, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 64 ( 9 ) page： 1126-1128 1994.2
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FABRICATION OF SIGE/SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY
N. Usami, T. Mine, S. Fukatsu and Y. Shiraki
SOLID-STATE ELECTRONICS Vol. 37 page： 539-541 1994
-
PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELLS WITH ABRUPT INTERFACES FORMED BY SEGREGANT-ASSISTED GROWTH
N. Usami, S. Fukatsu and Y. Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 33 ( 4B ) page： 2304-2306 1994
-
OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES
H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 33 ( 4B ) page： 2344-2347 1994
-
BAND-EDGE PHOTOLUMINESCENCE OF SIGE/STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)
D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki
SOLID-STATE ELECTRONICS Vol. 37 ( 4-6 ) page： 933-936 1994
-
A SI1-XGEX/SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY
Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 136 page： 355-360 1994
-
GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX/SI QUANTUM-WELLS
S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori and K. Okumura
J. Cryst. Growth Vol. 136 page： 315-321 1994
-
BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)
D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 63 ( 25 ) page： 3509-3511 1993.12
-
REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY
N. Usami, T. Mine, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 63 ( 20 ) page： 2789-2791 1993.11
-
BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)
D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters Vol. 32 ( 10A ) page： L1391-L1393 1993.10
-
SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito and K. Nakagawa
Surface Science Vol. 295 ( 3 ) page： 335-339 1993.10
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LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 63 ( 12 ) page： 1651-1653 1993.9
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HYBRID SI MOLECULAR-BEAM EPITAXIAL REGROWTH FOR A STRAINED SI1-XGEX/SI SINGLE-QUANTUM-WELL ELECTROLUMINESCENT DEVICE
Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 63 ( 17 ) page： 2414-2416 1993.8
-
HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa
Applied Physics Letters Vol. 63 ( 7 ) page： 967-969 1993.8
-
ABRUPT COMPOSITIONAL TRANSITION IN LUMINESCENT SI1-XGEX/SI QUANTUM-WELL STRUCTURES FABRICATED BY SEGREGANT ASSISTED GROWTH USING SB ADLAYER
N. Usami, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 63 ( 3 ) page： 388-390 1993.7
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DISLOCATION GLIDE MOTION IN HETEROEPITAXIAL THIN-FILMS OF SI1-XGEX/SI(100)
Y. Yamashita, K. Maeda, K. Fujita, N. Usami, K. Suzuki, S. Fukatsu, Y. Mera and Y. Shiraki
Philosophical Magazine Letters Vol. 67 ( 3 ) page： 165-171 1993.3
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IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION
S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito
J. Cryst. Growth Vol. 127 page： 401-405 1993
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LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, N. Usami and Y. Shiraki
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 11 ( 3 ) page： 895-898 1993
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LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, N. Usami and Y. Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 32 ( 3B ) page： 1502-1507 1993
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INTENSE PHOTOLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES
S. Fukatsu, N. Usami, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito
J. Cryst. Growth Vol. 127 page： 489-493 1993
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OBSERVATION OF ELECTROLUMINESCENCE ABOVE ROOM-TEMPERATURE IN STRAINED P-TYPE SI0.65GE0.35/SI(111) MULTIPLE-QUANTUM WELLS
S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa
J. Cryst. Growth Vol. 127 page： 1083-1087 1993
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PHOTOGENERATION AND TRANSPORT OF CARRIERS IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES
S. Fukatsu, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters Vol. 31 ( 11A ) page： L1525-L1528 1992.11
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QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito
Japanese Journal of Applied Physics Part 2-Letters Vol. 31 ( 9B ) page： L1319-L1321 1992.9
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OBSERVATION OF DEEP-LEVEL-FREE BAND EDGE LUMINESCENCE AND QUANTUM CONFINEMENT IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY
N. Usami, S. Fukatsu and Y. Shiraki
Applied Physics Letters Vol. 61 ( 14 ) page： 1706-1708 1992.8
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ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida and K. Nakagawa
Japanese Journal of Applied Physics Part 2-Letters Vol. 31 ( 8A ) page： L1015-L1017 1992.8
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BAND-EDGE LUMINESCENCE OF STRAINED SIXGE1-X/SI SINGLE QUANTUM-WELL STRUCTURES GROWN ON SI(111) BY SI MOLECULAR-BEAM EPITAXY
S. Fukatsu, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters Vol. 31 ( 8A ) page： L1018-L1020 1992.8
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SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito
THIN SOLID FILMS Vol. 222 1992