Papers - TSUTSUMI Takayoshi
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The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD Reviewed
B. B. Sahu, Y. Y. Yin, T. Tsutsumi, M. Hori, Jeon G. Han
Physical Chemistry Chemical Physics Vol. 18 ( 18 ) page： 13033 2016.4
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Control of Internal Plasma Parameters Toward Atomic Level Processing Reviewed
M. Sekine, T. Tsutsumi, Y. Fukunaga, K. Takeda, H. Kondo, K. Ishikawa, M. Hori
ECS Transactions Vol. 75 ( 6 ) page： 21 2016
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Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis Reviewed
T. Tsutsumi, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori
Japanese Journal of Applied Physics Vol. 55 ( 1S ) page： 01AB04 2015.11
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Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching Reviewed
T. Tsutsumi, Y. Fukunaga, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori
IEEE Transactions on Semiconductor Manufacturing Vol. 28 ( 4 ) page： 515 2015.8
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Wavelength Dependence for Silicon-Wafer Temperature Measurement by Autocorrelation-type Frequency-Domain Low-Coherence Interferometry Reviewed
T. Tsutsumi, T. Ohta, K Takeda, M. Ito, M. Hori
Applied Optics Vol. 54 ( 23 ) page： 7088 2015.8
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Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry Reviewed
T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito
Japanese Journal of Applied Physics Vol. 54 ( 1S ) page： 01AB03 2014.11
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Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry Reviewed
T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito
Applied Physics Letters Vol. 103 ( 18 ) page： 182102 2013.10