Faculty Profiles - TSUTSUMI Takayoshi

Papers - TSUTSUMI Takayoshi

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Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori

Journal of Vacuum Science & Technology B Vol. 41 ( 5 ) 2023.9

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma

Shih-Nan Hsiao, Nikolay Britun, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Vacuum Vol. 210 2023.4

Plasma Diagnostics and Characteristics of Hydrofluorocarbon Films in Capacitively Coupled CF4/H2 Plasmas

Shih-Nan Hsiao, Yusuke Imai, Nikolay Britrun, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

2022 International Symposium on Semiconductor Manufacturing (ISSM) page： 1 - 3 2022.12

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori

Journal of Vacuum Science & Technology A Vol. 40 ( 6 ) 2022.12

Indoor Floor Heel Mark Removal Using Spark Discharges and Pressurized Airflow Open Access

Yoshihiro Sakamoto, Takayoshi Tsutsumi, Hiromasa Tanaka, Kenji Ishikawa, Hiroshi Hashizume, Masaru Hori

COATINGS Vol. 12 ( 12 ) 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：MDPI

Heel marks (HMs), which are the black stains made by shoe soles on indoor floors, can be difficult to remove. However, this study shows how spark discharges combined with pressurized airflow in 60 s discharge treatments can remove such HMs. We further show that maximizing the HM removal rates depended on the electrode gap distance because of changes in the spark discharge parameters. In our experiments, the electrical voltage waveforms are shown with voltage spikes, called spark discharges, and the spike numbers were counted in 0.6-ms time units. It was found that the number of spark discharges increases when the electrode gap distance was widened from 5 mm to 10 mm and the pressurized airflow was added, and the HM removal rates increased 11.5%, the HM removal rates could be maximized. Taken together, the results show that spark discharges combined with pressurized air can remove HMs from indoor floors without no visual damage. This paper is a preliminary report showing that HMs can be removed by plasma.

DOI： 10.3390/coatings12121938

Open Access

Web of Science

Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis

Tsutsumi Takayoshi

Vacuum Vol. 205 2022.11

Study of optical emission spectroscopy using modified Boltzmann plot in dual-frequency synchronized pulsed capacitively coupled discharges with DC bias at low-pressure in Ar/O2/C4F8 plasma etching process

Tsutsumi Takayoshi

Physical Chemistry Chemical Physics Vol. 24 ( 22 ) page： 13883 - 13896 2022.6

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 61 ( 5 ) 2022.5

Low-temperature reduction of SnO2 by floating wire-assisted medium-pressure H-2/Ar plasma

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Hsiao Shih-Nan, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

PLASMA PROCESSES AND POLYMERS 2022.2

Nitrogen Atom Density Measurements in NAGDIS-T Using Vacuum Ultraviolet Absorption Spectroscopy Open Access

Ryosuke Nishio, Shin Kajita, Hirohiko Tanaka, Koji Asaoka, Takayoshi Tsutsumi, Masaru Hori, Noriyasu Ohno

Plasma and Fusion Research Vol. 17 page： 1201004 - 1 2022.1

Language：English Publishing type：Research paper (scientific journal)

For the development of a high nitrogen atom density source, we produced nitrogen plasmas and measured the nitrogen atom density using vacuum ultraviolet absorption spectroscopy (VUVAS) at high neutral gas pressure (>1.5 mTorr) and discharge power (>500 W) in the NAGDIS-T, which could generate spiral-shaped dissociative recombining plasmas. It was seen that the nitrogen atom density increases with increasing neutral gas pressure and discharge power, and it reached 6.2 1017 m−3. In the low gas pressure case, the estimated atom density was confirmed to be consistent with that measured by the actinometry method.

DOI： 10.1585/pfr.17.1201004

Open Access

Web of Science

Scopus

Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems Open Access

Kaneko Toshiro, Kato Hiromitsu, Yamada Hideaki, Yamamoto Muneaki, Yoshida Tomoko, Attri Pankaj, Koga Kazunori, Murakami Tomoyuki, Kuchitsu Kazuyuki, Ando Sugihiro, Nishikawa Yasuhiro, Tomita Kentaro, Ono Ryo, Ito Tsuyohito, Ito Atsushi M., Eriguchi Koji, Nozaki Tomohiro, Tsutsumi Takayoshi, Ishikawa Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1

On the Etching Mechanism of Highly Hydrogenated SiN Films by CF4/D2 Plasma: Comparison with CF4/H2 Open Access

Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Tsutsumi Takayoshi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Coatings Vol. 11 ( 12 ) 2021.12

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Vervuurt R. H. J., Mukherjee B., Nakane K., Tsutsumi T., Hori M., Kobayashi N.

LANGMUIR Vol. 37 ( 43 ) page： 12663 - 12672 2021.11

Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF4/H-2 plasma at different substrate temperatures Reviewed

Hsiao Shih-Nan, Britun Nikolay, Thi-Thuy-Nga Nguyen, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

PLASMA PROCESSES AND POLYMERS 2021.8

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H-2 plasma Reviewed

Hsiao Shih-Nan, Nakane Kazuya, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE Vol. 542 2021.3

Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O-2, and Ar Reviewed

Hsiao Shih-Nan, Ishikawa Kenji, Hayashi Toshio, Ni Jiwei, Tsutsumi Takayoshi, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE Vol. 541 2021.3

Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature Reviewed

Sugiura Hirotsugu, Kondo Hiroki, Higuchi Kimitaka, Arai Shigeo, Hamaji Ryo, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

CARBON Vol. 170 page： 93 - 99 2020.12

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H-2/Ar plasma at atmospheric pressure Reviewed Open Access

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

SCIENTIFIC REPORTS Vol. 10 ( 1 ) 2020.10

Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures Reviewed

Kim Jaeho, Takeda Keigo, Itagaki Hirotomo, Wang Xue-lun, Hirose Shingo, Ogiso Hisato, Shimizu Tetsuji, Kumagai Naoto, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru, Sakakita Hajime

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING Vol. 15 ( 9 ) page： 1281 - 1287 2020.9

Numerical analysis of coaxial dielectric barrier helium discharges: three-stage mode transitions and internal bullet propagation Reviewed Open Access

Sato Yosuke, Ishikawa Kenji, Tsutsumi Takayoshi, Hori Masaru

APPLIED PHYSICS EXPRESS Vol. 13 ( 8 ) page： . 2020.8

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Papers - TSUTSUMI Takayoshi