Faculty Profiles - TSUTSUMI Takayoshi

Papers - TSUTSUMI Takayoshi

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Formation of SCF+, SCF2+, and CS2+ ions during gas modulation cycles associated with interference between alternating C4F8 and SF6 in Ar plasma Reviewed

Yoshie, T; Nguyen, TT; Nguyen, TTN; Inoue, K; Tsutsumi, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 65 ( 3 ) 2026.2

Development and investigation of a large-diameter helium atmospheric-pressure plasma jet with floating electrode configuration Reviewed

Keren Lin, Shinji Yoshimura, Michael K. T. Mo, Wataru Kikuchi, Yuya Yamashita, Jun Enomoto, Motoshi Goto, Hiroshi Akatsuka and Takayoshi Tsutsumi

Japanese Journal of Applied Physics Vol. 65 page： 026002 2026.2

SiO2 etch-damage mitigation in fluorocarbon C4F8 plasma: CFx polymer deposition and polyatomic ion effects Reviewed

Nunomura, S; Tsutsumi, T; Hori, M

APPLIED SURFACE SCIENCE Vol. 713 2025.12

Study on dry etching of epitaxially grown Si0.7Ge0.3 and Si using H2 diluted CF4 plasma Reviewed International coauthorship

Ozaki, K; Imai, Y; Tsutsumi, T; Imai, Y; Takada, N; Ishikawa, K; Yamamoto, Y; Wen, WC; Makihara, K

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 7 ) 2025.7

SiO2/Si stack's damage in plasma processing: Ar, O2, and H2 gas species effect on damage formation, structure, and recovery Reviewed

Nunomura, S; Tsutsumi, T; Kamataki, K; Oshima, R; Shiratani, M; Hori, M

SURFACES AND INTERFACES Vol. 62 2025.4

Recovery of plasma-induced defects in SiO2/Si stack: defect activation and hydrogen’s effects

Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori

Applied Physics Express Vol. 18 ( 3 ) 2025.3

Achieving the In-plane Orientation of Carbon Nanowalls: Implications for Sensing, Energy Harvesting, and Nanobio Devices

Iba, S; Kondo, H; Tsutsumi, T; Ishikawa, K; Hiramatsu, M; Hori, M

ACS APPLIED NANO MATERIALS Vol. 8 ( 6 ) page： 2660 - 2668 2025.2

SiO2/Si interface oxidation and defects in O2 plasma processing

Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori

Applied Physics Express Vol. 18 ( 2 ) 2025.2

Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor

Hu, LG; Tsutsumi, T; Kobayashi, N; Ishikawa, K; Hori, M

APPLIED SURFACE SCIENCE Vol. 681 2025.2

Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning

Yusuke Ando, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Diamond and Related Materials Vol. 151 page： 111687 - 111687 2025.1

Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO2 by Cryogenic-Assisted Surface Reactions

Tsutsumi Takayoshi

Small Methods Vol. 8 ( 12 ) 2024.12

Radical, ion, and photon's effects on defect generation at SiO2/Si interface during plasma etching

Nunomura, S; Tsutsumi, T; Takada, N; Fukasawa, M; Hori, M

APPLIED SURFACE SCIENCE Vol. 672 2024.11

High-Speed Removal Process for Organic Polymers by Non-Thermal Atmospheric-Pressure Spark Discharge at Room Temperature and Its Mechanism

Yoshihiro Sakamoto, Takayoshi Tsutsumi, Hiromasa Tanaka, Kenji Ishikawa, Hiroshi Hashizume, Masaru Hori

Coatings Vol. 14 ( 10 ) 2024.10

In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching

Takayoshi Tsutsumi, Atsuki Asano, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Journal of Vacuum Science & Technology A Vol. 42 ( 3 ) 2024.5

O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery

S. Nunomura, T. Tsutsumi, I. Sakata, M. Hori

journal of Applied Physics Vol. 135 ( 5 ) page： 053301 2024.2

Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( 12 ) 2023.12

Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6 Open Access

Tsutsumi Takayoshi

Applied Surface Science Vol. 638 2023.11

MEMS nozzle for dry-capturing lily pollens in array and fixing on culture media for plasma bio-applications Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( SN ) 2023.11

Deposition of carbon-based materials directly on copper foil and nickel foam as 2D-and 3D-networked metal substrates by in-liquid plasma Open Access

Tsutsumi Takayoshi

Plasma Processes and Polymers Vol. 20 ( 11 ) 2023.11

Development of an experimental system for cell viability assays of yeasts using gas-temperature controllable plasma jets Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( SL ) 2023.9

Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori

Journal of Vacuum Science & Technology B Vol. 41 ( 5 ) 2023.9

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma

Shih-Nan Hsiao, Nikolay Britun, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Vacuum Vol. 210 2023.4

Plasma Diagnostics and Characteristics of Hydrofluorocarbon Films in Capacitively Coupled CF4/H2 Plasmas

Shih-Nan Hsiao, Yusuke Imai, Nikolay Britrun, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

2022 International Symposium on Semiconductor Manufacturing (ISSM) page： 1 - 3 2022.12

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori

Journal of Vacuum Science & Technology A Vol. 40 ( 6 ) 2022.12

Indoor Floor Heel Mark Removal Using Spark Discharges and Pressurized Airflow Open Access

Yoshihiro Sakamoto, Takayoshi Tsutsumi, Hiromasa Tanaka, Kenji Ishikawa, Hiroshi Hashizume, Masaru Hori

COATINGS Vol. 12 ( 12 ) 2022.12

Language：English Publishing type：Research paper (scientific journal) Publisher：MDPI

Heel marks (HMs), which are the black stains made by shoe soles on indoor floors, can be difficult to remove. However, this study shows how spark discharges combined with pressurized airflow in 60 s discharge treatments can remove such HMs. We further show that maximizing the HM removal rates depended on the electrode gap distance because of changes in the spark discharge parameters. In our experiments, the electrical voltage waveforms are shown with voltage spikes, called spark discharges, and the spike numbers were counted in 0.6-ms time units. It was found that the number of spark discharges increases when the electrode gap distance was widened from 5 mm to 10 mm and the pressurized airflow was added, and the HM removal rates increased 11.5%, the HM removal rates could be maximized. Taken together, the results show that spark discharges combined with pressurized air can remove HMs from indoor floors without no visual damage. This paper is a preliminary report showing that HMs can be removed by plasma.

DOI： 10.3390/coatings12121938

Open Access

Web of Science

Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis

Tsutsumi Takayoshi

Vacuum Vol. 205 2022.11

Study of optical emission spectroscopy using modified Boltzmann plot in dual-frequency synchronized pulsed capacitively coupled discharges with DC bias at low-pressure in Ar/O2/C4F8 plasma etching process

Tsutsumi Takayoshi

Physical Chemistry Chemical Physics Vol. 24 ( 22 ) page： 13883 - 13896 2022.6

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 61 ( 5 ) 2022.5

Low-temperature reduction of SnO2 by floating wire-assisted medium-pressure H-2/Ar plasma

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Hsiao Shih-Nan, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

PLASMA PROCESSES AND POLYMERS 2022.2

Nitrogen Atom Density Measurements in NAGDIS-T Using Vacuum Ultraviolet Absorption Spectroscopy Open Access

Ryosuke Nishio, Shin Kajita, Hirohiko Tanaka, Koji Asaoka, Takayoshi Tsutsumi, Masaru Hori, Noriyasu Ohno

Plasma and Fusion Research Vol. 17 page： 1201004 - 1 2022.1

Language：English Publishing type：Research paper (scientific journal)

For the development of a high nitrogen atom density source, we produced nitrogen plasmas and measured the nitrogen atom density using vacuum ultraviolet absorption spectroscopy (VUVAS) at high neutral gas pressure (>1.5 mTorr) and discharge power (>500 W) in the NAGDIS-T, which could generate spiral-shaped dissociative recombining plasmas. It was seen that the nitrogen atom density increases with increasing neutral gas pressure and discharge power, and it reached 6.2 1017 m−3. In the low gas pressure case, the estimated atom density was confirmed to be consistent with that measured by the actinometry method.

DOI： 10.1585/pfr.17.1201004

Open Access

Web of Science

Scopus

Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems Open Access

Kaneko Toshiro, Kato Hiromitsu, Yamada Hideaki, Yamamoto Muneaki, Yoshida Tomoko, Attri Pankaj, Koga Kazunori, Murakami Tomoyuki, Kuchitsu Kazuyuki, Ando Sugihiro, Nishikawa Yasuhiro, Tomita Kentaro, Ono Ryo, Ito Tsuyohito, Ito Atsushi M., Eriguchi Koji, Nozaki Tomohiro, Tsutsumi Takayoshi, Ishikawa Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1

On the Etching Mechanism of Highly Hydrogenated SiN Films by CF4/D2 Plasma: Comparison with CF4/H2 Open Access

Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Tsutsumi Takayoshi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Coatings Vol. 11 ( 12 ) 2021.12

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Vervuurt R. H. J., Mukherjee B., Nakane K., Tsutsumi T., Hori M., Kobayashi N.

LANGMUIR Vol. 37 ( 43 ) page： 12663 - 12672 2021.11

Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF4/H-2 plasma at different substrate temperatures Reviewed

Hsiao Shih-Nan, Britun Nikolay, Thi-Thuy-Nga Nguyen, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

PLASMA PROCESSES AND POLYMERS 2021.8

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H-2 plasma Reviewed

Hsiao Shih-Nan, Nakane Kazuya, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE Vol. 542 2021.3

Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O-2, and Ar Reviewed

Hsiao Shih-Nan, Ishikawa Kenji, Hayashi Toshio, Ni Jiwei, Tsutsumi Takayoshi, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE Vol. 541 2021.3

Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature Reviewed

Sugiura Hirotsugu, Kondo Hiroki, Higuchi Kimitaka, Arai Shigeo, Hamaji Ryo, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

CARBON Vol. 170 page： 93 - 99 2020.12

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H-2/Ar plasma at atmospheric pressure Reviewed Open Access

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

SCIENTIFIC REPORTS Vol. 10 ( 1 ) 2020.10

Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures Reviewed

Kim Jaeho, Takeda Keigo, Itagaki Hirotomo, Wang Xue-lun, Hirose Shingo, Ogiso Hisato, Shimizu Tetsuji, Kumagai Naoto, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru, Sakakita Hajime

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING Vol. 15 ( 9 ) page： 1281 - 1287 2020.9

Numerical analysis of coaxial dielectric barrier helium discharges: three-stage mode transitions and internal bullet propagation Reviewed Open Access

Sato Yosuke, Ishikawa Kenji, Tsutsumi Takayoshi, Hori Masaru

APPLIED PHYSICS EXPRESS Vol. 13 ( 8 ) page： . 2020.8

Atomic nitrogen density measurements by actinometry method in the toroidal device NAGDIS-T Reviewed

Kajita Shin, Asaoka Koji, Tanaka Hirohiko, Nishio Ryosuke, Tsutsumi Takayoshi, Hori Masaru, Ohno Noriyasu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 8 ) page： . 2020.8

In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar+ ions and Cl radicals Reviewed

Hasegawa Masaki, Tsutsumi Takayoshi, Tanide Atsushi, Nakamura Shohei, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Vol. 38 ( 4 ) 2020.7

Numerical simulations of stable, high-electron-density atmospheric pressure argon plasma under pin-to-plane electrode geometry: effects of applied voltage polarity Reviewed Open Access

Yosuke Sato, Kenji Ishikawa, Takayoshi Tsutsumi, Akio Ui, Masato Akita, Shotaro Oka, Masaru Hori

Journal of Physics D: Applied Physics 2020.4

Generation and Diagnostics of Ambient Air Glow Discharge in Centimeter-Order Gaps Reviewed Open Access

Gamaleev Vladislav, Tsutsumi Takayoshi, Hiramatsu Mined, Ito Masafumi, Hori Masaru

IEEE ACCESS Vol. 8 page： 72607 - 72619 2020.4

Electron and negative ion dynamics in a pulsed 100 MHz capacitive discharge produced in an O-2 and Ar/O-2/C4F8 gas mixture Reviewed

Sirse N, Tsutsumi T, Sekine M, Hori M, Ellingboe A. R

PLASMA SOURCES SCIENCE & TECHNOLOGY Vol. 29 ( 3 ) 2020.3

Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study Reviewed

Fukunaga Yusuke, Longo Roberto C, Ventzek Peter L. G, Lane Barton, Ranjan Alok, Hwang Gyeong S, Hartmann Greg, Tsutsumi Takayoshi, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Hori Masaru

JOURNAL OF APPLIED PHYSICS Vol. 127 ( 2 ) 2020.1

Etching characteristics of PECVD-prepared SiN films with CF4/D2and CF4/H2plasmas at different temperatures

Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings Vol. 2020- 2020

Language：English Publishing type：Research paper (international conference proceedings) Publisher：Institute of Electrical and Electronics Engineers Inc.

The dependences of plasmas (CF4/D2 and CF4/H2) on etch rates of the PECVD SiN films at different substrate temperatures were investigated. The CF4/D2 plasma exhibited higher etch rates than that for the CF4/D2 plasma at room temperature and higher. The optical emission spectra showed that the CF polymerization, F and Balmer emissions were stronger in the CF4/D2 plasma, by comparing with the CF4/H2 plasma. A thinner fluorocarbon thickness with a lower F/C ratio was found in the sample proceeded by the CF4/H2 plasma. The fluorocarbon thickness and gas phase concentration were not responsible for the increase of etch rate in the CF4/D2 plasma. The abstraction of H inside the SiN films by deuterium and hydrogen dissociation were considered to be important for the etching of the Si-H bond rich SiN films.

DOI： 10.1109/ISSM51728.2020.9377537

Web of Science

Scopus

Gas-phase and film analysis of hydrogenated amorphous carbon films: Effect of ion bombardment energy flux on sp2 carbon structures Reviewed

Hirotsugu Sugiura, Yasuyuki Ohashi, Kenji Ishikawa, Hiroki Kondo, Toshiaki Kato, Toshiro Kaneko, Keigo Takeda, Takayoshi Tsutsumi, Toshio Hayashi, Makoto Sekine, Masaru Hori

Diamond and Related Materials Vol. 104 page： 107651 2019.12

In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals Reviewed

Nakane Kazuya, Vervuurt Rene H. J., Tsutsumi Takayoshi, Kobayashi Nobuyoshi, Hori Masaru

ACS APPLIED MATERIALS & INTERFACES Vol. 11 ( 40 ) page： 37263 - 37269 2019.10

Gene Expression of Osteoblast-like Cells on Carbon-Nanowall as Scaffolds during Incubation with Electrical Stimulation Reviewed

Tsutsumi Takayoshi

ACS Applied Bio Materials Vol. 2 ( 7 ) page： 2698 - 2702 2019.7

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? Reviewed Open Access

Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, Kenji Ishikawa

Japanese Journal of Applied Physics Vol. 58 2019.6

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development Reviewed

Japanese Journal of Applied Physics Vol. 58 2019.6

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation Reviewed

Japanese Journal of Applied Physics Vol. 58 2019.6

Facile synthesis of SnO2-graphene composites employing nonthermal plasma and SnO2 nanoparticles-dispersed ethanol Reviewed

Borude Ranjit R, Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 17 ) 2019.4

Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls

Imai Shun, Naito Kenichi, Kondo Hiroki, Cho Hyung Jun, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 52 ( 10 ) page： 105503 - 105503 2019.3

Real-time control of a wafer temperature for uniform plasma process

T. Tsutsumi, Y. Fuknaga, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

2018 International Symposium on Semiconductor Manufacturing 2019.2

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Odaka Hidefumi, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

JOURNAL OF APPLIED PHYSICS Vol. 125 ( 6 ) page： 063304 - 063304 2019.2

Liquid dynamics in response to an impinging low-temperature plasma jet

Tsutsumi Takayoshi

Journal of Physics D: Applied Physics Vol. 52 ( 7 ) 2019.2

Control of sp2-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH4/H2 plasma-enhanced chemical vapor deposition Reviewed

Hirotsugu Sugiura, Lingyun Jia, Yasuyuki Ohashi, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics Vol. 58 ( 3 ) page： 030912 2019.2

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries Reviewed

Ranjit R. Borude, Hirotsugu Sugiura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Nobuyuki Ikarashi, Masaru Hori

ACS Appplied Nano Materials Vol. 2 ( 2 ) page： 649-654 2019.2

Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds

Tsutsumi Takayoshi

Applied Physics Express Vol. 12 ( 2 ) 2019.2

Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 58 ( 2 ) 2019.2

Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma Reviewed

Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Han Jeon Geon, Hori Masaru

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition Reviewed Open Access

H. Sugiura, H. Kondo, T. Tsutsumi, K. Ishikawa, M. Hori

C Vol. 5 ( 1 ) page： 8 2019.1

Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition Reviewed Open Access

Masakazu Tomatsu , Mineo Hiramatsu, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori

C Vol. 5 ( 1 ) page： 7 2019.1

Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas Reviewed

Yan Zhang, Kenji Ishikawa, Miran Mozetič, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Masaru Hori

Plasma Processes and Polymers 2019.1

Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C2F6/H-2 plasma-enhanced chemical vapor deposition

Imai Shun, Kondo Hiroki, Hyungjun Cho, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

APPLIED PHYSICS EXPRESS Vol. 12 ( 1 ) 2019.1

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The electrochemical durability of Pt nanoparticles-supported carbon nanowalls (Pt/CNWs) determined from potential cycle tests was 88% performance after 20 000 cycles and 50% performance around 140 000 cycles when the CNWs were fabricated by the C2F6/H-2 plasma-enhanced chemical vapor deposition system (C2F6-CNWs). Even after the extended start/stop-simulation tests of fuel cell Pt/C2F6-CNWs, Pt was aggregated; however, the morphological structure of the CNWs was maintained and no corrosion was evident from scanning electron microscopy observations and Raman analysis. For graphene-based catalyst supports, i.e., the Pt/C2F6-CNWs, graphene crystallinity is essential to extend electrochemical durability by inhibiting corrosion during fuel cell operation. (C) 2018 The Japan Society of Applied Physics

DOI： 10.7567/1882-0786/aaf0ab

Web of Science

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching Reviewed

Zhang Yan, Imamura Masato, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 10 ) 2018.10

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma Reviewed

Zecheng Liu, Kenji Ishikawa, Masato Imamura, Takayoshi Tsutsumi, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics Vol. 57 ( 6 ) 2018.6

Language：English Publishing type：Research paper (international conference proceedings) Publisher：Japan Society of Applied Physics

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

DOI： 10.7567/JJAP.57.06JD01

Web of Science

Scopus

Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition Reviewed

Hirotsugu Sugiura, Lingyun Jia, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics Vol. 57 ( 6 ) 2018.6

Language：English Publishing type：Research paper (international conference proceedings) Publisher：Japan Society of Applied Physics

Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed. The sp2 fraction of the a-C films reached a minimum of 46%, where the CH3 density was maximum for a residence time of 6 ms. The sp2 fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties.

DOI： 10.7567/JJAP.57.06JE03

Web of Science

Scopus

Nanographene synthesis employing in-liquid plasmas with alcohols or hydrocarbons Reviewed

Atsushi Ando, Kenji Ishikawa, Hiroki Kondo, Takayoshi Tsutsumi, Keigo Takeda, Takayuki Ohta, Masafumi Ito, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics Vol. 57 ( 2 ) 2018.2

Language：English Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

Graphenes of nanometer-scale grain size (nanographenes) were synthesized using in-liquid plasmas with alcohols or hydrocarbons. This method of nanographene synthesis showed a trade-off relationship between crystallinity and synthesis rate. The high crystallinity of nanographenes synthesized with alcohols was evaluated from the small full width at half maxima (FWHM) of the G band in Raman scattering spectra. On the other hand, in the case of using hydrocarbons such as n-hexane and benzene, a significantly high synthesis rate was obtained but the crystallinity of nanographenes was low. It was found that hydroxyl groups and oxygen atoms of liquid sources play important roles in determining the crystallinity of synthesized nanographenes.

DOI： 10.7567/JJAP.57.026201

Web of Science

Scopus

Rapid growth of micron-sized graphene flakes using in-liquid plasma employing iron phthalocyanine-added ethanol Reviewed

Tomoki Amano, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Keigo Takeda, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Applied Physics Express Vol. 11 ( 1 ) 2018.1

Language：English Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

Giant graphene flakes on the micron scale were synthesized and grown in plasmas in liquid-phase pure ethanol with added iron phthalocyanine (FePc) in a solvent. At atmospheric pressure, plasmas were generated in the gas phase filled with Ar and in the liquid phases comprising bubbles and liquid solutions. In the mixture of FePc in ethanol, nanographene sheets aggregated to form giant graphene flakes, as confirmed by the D, G, and 2D bands in the corresponding Raman spectra. Therefore, a bottom-up approach of graphite synthesis from pure ethanol with additives and a catalyst was realized by in-liquid plasma processing.

DOI： 10.7567/APEX.11.015102

Web of Science

Scopus

Real-time control of a wafer temperature for uniform plasma process

Tsutsumi T., Fuknaga Y., Ishikawa K., Kondo H., Sekine M., Hori M.

2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) page： . 2018

Measurement of F-, O- and CF3- densities in 60 and 100 MHz asymmetric capacitively coupled plasma discharge produced in an Ar/O2/C4F8 gas mixture Reviewed

N. Sirse, T. Tsutsumi, M. Sekine, M. Hori, A. R. Ellingboe

Journal of Physics D: Applied Physics Vol. 50 ( 33 ) page： 335205 2017.7

Temperature dependence of protection layer formation on organic trench sidewall in H2/N2 plasma etching with control of substrate temperature Reviewed

Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

Japanese Journal of Applied Physics Vol. 56 ( 7 ) page： 076202 2017.6

Investigation of the radially resolved oxygen dissociation degree and local mean electron energy in oxygen plasmas in contact with different surface materials Reviewed Open Access

T. Tsutsumi, A. Greb, A. R. Gibson, M. Hori, D. O'Connell, T. Gans

Journal of Applied Physics Vol. 121 ( 14 ) page： 143301 2017.4

Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas Reviewed

T. Ueyama, Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Iwata, Y. Ohya, H. Sugai, M. Hori

Japanese Journal of Applied Physics Vol. 56 ( 6S2 ) page： 06HC03 2017.3

Absolute density of precursor SiH₃ radicals and H atoms in H2-diluted SiH₄ gas plasma for deposition of microcrystalline silicon films Reviewed Open Access

Y. Abe, K. Ishikawa, K. Takeda, T. Tsutsumi, A. Fukushima, H. Kondo, M. Sekine, M. Hori

Applied Physics Letters Vol. 110 ( 4 ) page： 043902 2017.1

Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices Reviewed

T. Tsutsumi, M. Zaitsu, A. Kobayashi, N. Kobayashi, M. Hori

PLASMA NANO SCIENCE AND TECHNOLOGY Vol. 77 ( 3 ) page： 25 - 28 2017

Language：English Publishing type：Research paper (international conference proceedings) Publisher：ELECTROCHEMICAL SOC INC

Plasma processes for deposition and etching are required for development of the next generation semiconductor devices. To achieve high performance of nanoscale devices, the continuous development of fabrication processes is necessary. An atomic layer etching (ALE) process achieves this continuous development, since the process has advantages such as more precise, higher controllability and repeatability. We have developed ALE process for SiO2 to achieve high controllability and repeatability. The ALE process is a cyclic process composed of two steps: a first step which deposits a fluorocarbon film on the SiO2 surface using an Ar/C4F8 plasma, followed by an O-2 plasma etching step. The O-2 plasma etching suppresses forming a carbon-rich film on the target material surface and maintains the chamber conditions by removing the fluorocarbon on the chamber walls. The ALE process for SiO2 exhibits high reproducibility and has the potential to allow uniform EPC values over large wafer surfaces.

DOI： 10.1149/07703.0025ecst

Web of Science

Atomic layer etching of SiO₂ by alternating an O₂ plasma with fluorocarbon film deposition Reviewed Open Access

T. Tsutsumi, H. Kondo, M. Hori, M. Zaitsu, A. Kobayashi, T. Nozawa, N. Kobayashi

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 35 ( 1 ) page： 01A103 2016.11

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD Reviewed

B. B. Sahu, Y. Y. Yin, T. Tsutsumi, M. Hori, Jeon G. Han

Physical Chemistry Chemical Physics Vol. 18 ( 18 ) page： 13033 2016.4

Control of Internal Plasma Parameters Toward Atomic Level Processing Reviewed

M. Sekine, T. Tsutsumi, Y. Fukunaga, K. Takeda, H. Kondo, K. Ishikawa, M. Hori

ECS Transactions Vol. 75 ( 6 ) page： 21 2016

Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis Reviewed

T. Tsutsumi, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

Japanese Journal of Applied Physics Vol. 55 ( 1S ) page： 01AB04 2015.11

Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching Reviewed

T. Tsutsumi, Y. Fukunaga, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

IEEE Transactions on Semiconductor Manufacturing Vol. 28 ( 4 ) page： 515 2015.8

Wavelength Dependence for Silicon-Wafer Temperature Measurement by Autocorrelation-type Frequency-Domain Low-Coherence Interferometry Reviewed

T. Tsutsumi, T. Ohta, K Takeda, M. Ito, M. Hori

Applied Optics Vol. 54 ( 23 ) page： 7088 2015.8

Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry Reviewed

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Japanese Journal of Applied Physics Vol. 54 ( 1S ) page： 01AB03 2014.11

Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry Reviewed

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Applied Physics Letters Vol. 103 ( 18 ) page： 182102 2013.10

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