Faculty Profiles - TSUTSUMI Takayoshi

Papers - TSUTSUMI Takayoshi

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Formation of SCF+, SCF2+, and CS2+ ions during gas modulation cycles associated with interference between alternating C4F8 and SF6 in Ar plasma Reviewed

Yoshie, T; Nguyen, TT; Nguyen, TTN; Inoue, K; Tsutsumi, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 65 ( 3 ) 2026.2

Development and investigation of a large-diameter helium atmospheric-pressure plasma jet with floating electrode configuration Reviewed

Keren Lin, Shinji Yoshimura, Michael K. T. Mo, Wataru Kikuchi, Yuya Yamashita, Jun Enomoto, Motoshi Goto, Hiroshi Akatsuka and Takayoshi Tsutsumi

Japanese Journal of Applied Physics Vol. 65 page： 026002 2026.2

SiO2 etch-damage mitigation in fluorocarbon C4F8 plasma: CFx polymer deposition and polyatomic ion effects Reviewed

Nunomura, S; Tsutsumi, T; Hori, M

APPLIED SURFACE SCIENCE Vol. 713 2025.12

Study on dry etching of epitaxially grown Si0.7Ge0.3 and Si using H2 diluted CF4 plasma Reviewed International coauthorship

Ozaki, K; Imai, Y; Tsutsumi, T; Imai, Y; Takada, N; Ishikawa, K; Yamamoto, Y; Wen, WC; Makihara, K

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 7 ) 2025.7

SiO2/Si stack's damage in plasma processing: Ar, O2, and H2 gas species effect on damage formation, structure, and recovery Reviewed

Nunomura, S; Tsutsumi, T; Kamataki, K; Oshima, R; Shiratani, M; Hori, M

SURFACES AND INTERFACES Vol. 62 2025.4

Recovery of plasma-induced defects in SiO2/Si stack: defect activation and hydrogen’s effects

Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori

Applied Physics Express Vol. 18 ( 3 ) 2025.3

Achieving the In-plane Orientation of Carbon Nanowalls: Implications for Sensing, Energy Harvesting, and Nanobio Devices

Iba, S; Kondo, H; Tsutsumi, T; Ishikawa, K; Hiramatsu, M; Hori, M

ACS APPLIED NANO MATERIALS Vol. 8 ( 6 ) page： 2660 - 2668 2025.2

SiO2/Si interface oxidation and defects in O2 plasma processing

Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori

Applied Physics Express Vol. 18 ( 2 ) 2025.2

Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor

Hu, LG; Tsutsumi, T; Kobayashi, N; Ishikawa, K; Hori, M

APPLIED SURFACE SCIENCE Vol. 681 2025.2

Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning

Yusuke Ando, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Diamond and Related Materials Vol. 151 page： 111687 - 111687 2025.1

Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO2 by Cryogenic-Assisted Surface Reactions

Tsutsumi Takayoshi

Small Methods Vol. 8 ( 12 ) 2024.12

Radical, ion, and photon's effects on defect generation at SiO2/Si interface during plasma etching

Nunomura, S; Tsutsumi, T; Takada, N; Fukasawa, M; Hori, M

APPLIED SURFACE SCIENCE Vol. 672 2024.11

High-Speed Removal Process for Organic Polymers by Non-Thermal Atmospheric-Pressure Spark Discharge at Room Temperature and Its Mechanism

Yoshihiro Sakamoto, Takayoshi Tsutsumi, Hiromasa Tanaka, Kenji Ishikawa, Hiroshi Hashizume, Masaru Hori

Coatings Vol. 14 ( 10 ) 2024.10

In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching

Takayoshi Tsutsumi, Atsuki Asano, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Journal of Vacuum Science & Technology A Vol. 42 ( 3 ) 2024.5

O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery

S. Nunomura, T. Tsutsumi, I. Sakata, M. Hori

journal of Applied Physics Vol. 135 ( 5 ) page： 053301 2024.2

Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( 12 ) 2023.12

Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6 Open Access

Tsutsumi Takayoshi

Applied Surface Science Vol. 638 2023.11

MEMS nozzle for dry-capturing lily pollens in array and fixing on culture media for plasma bio-applications Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( SN ) 2023.11

Deposition of carbon-based materials directly on copper foil and nickel foam as 2D-and 3D-networked metal substrates by in-liquid plasma Open Access

Tsutsumi Takayoshi

Plasma Processes and Polymers Vol. 20 ( 11 ) 2023.11

Development of an experimental system for cell viability assays of yeasts using gas-temperature controllable plasma jets Open Access

Tsutsumi Takayoshi

Japanese Journal of Applied Physics Vol. 62 ( SL ) 2023.9

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Papers - TSUTSUMI Takayoshi