Papers - SHIRAISHI Kenji
-
Origins of Negative Fixed Charge in Wet Oxidation for SiC Reviewed
19. Katsumasa Kamiya, Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Kenji Shiraishi,
Materials Science Forum page: 740-742, 409-412 2013
-
Theoretical Study of N incorporation Effect during SiC Oxidation Reviewed
21. Shigenori Kato, Kenta Chokawa, Katsumasa Kamiya, Kenji Shiraishi,
Materials Science Forum, page: 740-742, 455-458 2013
-
A New-Type of Defect Generation at a 4H-SiC/SiO2 interface by Oxidation Induced Compressive Strain Reviewed
20. Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,
Materials Science Forum, page: 740-742, 469-472 2013
-
Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors Reviewed
5. Y. Ebihara, K. Kamiya, K. Shiraishi . A. Yamaguchi,
physica status solidi (c) ( 8 ) page: 2279-2281 2012
-
Theoretical study of Si-based ionic switch Reviewed
15. Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama,
Applied Physics Letters ( 100 ) page: 203506-203509 2012
-
Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide Reviewed
14. Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,
Applied Physics Letters ( 100 ) page: 212110-212112 2012
-
Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed
13. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,
,Jpn. J. Appl. Phys. 51, Art. page: 02BM03 2012
-
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed
12. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ11 2012
-
Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed
11. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ01 2012
-
ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Reviewed
10. K. Kamiya, M. Y. Yang, S.-G. Park,B. Magyari-Köpe,Y. Nishi, M. Niwa, K. Shiraishi
Appl. Phys. Lett. 100, Art. page: 073502 2012
-
Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material Reviewed
N. Umezawa K. Shiraishi,,
Appl. Phys. Lett. 100, Art. page: 092904 2012
-
Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed
8. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,
Jpn. J. Appl. Phys. 51, Art. page: 02BM03 2012
-
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed
7. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ11 2012
-
Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed
6. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ01 2012
-
Physics in Designing Desirable ReRAM Stack Structure -Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal
4. Katsumasa Kamiya, Moon Young Yang, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi,
Technical Digest of 2012 International Electron Devices Meeting, page: 478-481 2012
-
Atomistic Design of Guiding Principles for High Quality Metal-Oxide-Nitride-Oxide-Semiconductor Memories:First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers Reviewed
1. K. Yamguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,
Jpn. J. Appl. Phys. 50 Art. page: 04DD05 2011
-
Calculation of the Electron Transfer Coupling Matrix Element in Diabatic Reactions Reviewed
16. Mitsuo Shoji, Kyohei Hanaoka, Akimasa Sato, Daiki Kondo, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi,
International Journal of Quantum Chemistry, DOI: 10.1002/qua. page: 24074 2011
-
An atomistic study on hydrogenation effects toward quality improvement of program/erase cycle of MONOS- type memory Reviewed
4. Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi,
IEICE Transactions ( E94-C ) page: 693-698 2011
-
Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency Reviewed
3. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu,
Appl. Phys. Lett. 99, Art. page: 151108 2011
-
Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed
2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh,
Jpn. J. Appl. Phys. 50 Art. page: 04DD04 2011