Papers - SHIRAISHI Kenji
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations Reviewed
T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
Tech. Digest of 2013 International Electron Devices Meeting page： P.30.5.1-P.30.5.4 2013.12
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Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching Reviewed
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
IEEE Transactions on Electron Devices ( 60 ) page： 3400-3406 2013.11
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Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories Reviewed
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
Appl. Phys. Lett. ( 103 ) page： 93504 2013.10
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Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates Reviewed
M. Y. Yang, K. Kamiya, K. Shiraishi
AIP Advances ( 3 ) page： 102113 2013.10
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Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Reviewed
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,
ECS Trans. 58 page： 181-188 2013.10
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Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories Reviewed
Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi
Physical Review B ( 87 ) page： 155201 2013.8
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Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon Reviewed
M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
J. Appl. Phys. ( 114 ) page： 63701 2013.8
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Effect of Coulomb interaction on multi-electronwave packet dynamics Reviewed
T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi
AIP Conf. Proc. ( 1566 ) page： 421-422 2013.8
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Physical origins of ON-OFF switching in ReRAM via VO based conducting channels Reviewed
K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi
AIP Conf. Proc. ( 1566 ) page： 11-12 2013.8
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Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II Reviewed
K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi
Journal of Biomolecular Structure and Dynamics ( 31 ) page： 1-7 2013.7
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Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications Reviewed
N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,
Tech. Digest of 2013 Symposium on VLSI Tech. page： T130-T131 2013.6
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Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure Reviewed
Kenji Shiraisi, Taro Shiokawa, Genki Fujita
Jpn. J. Appl. Phys ( 52 ) page： 04CJ06 2013.4
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Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi
Jpn. J. Appl. Phys ( 52 ) page： 04CD11 2013.4
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On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors Reviewed
H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio
J. Phys.: Conf. Ser. ( 429 ) page： 12043 2013.4
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Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel Reviewed
C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi
Appl. Phys. Exp. ( 6 ) page： 65201 2013.4
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Calculation of the electron transfer coupling matrix element in diabatic reactions Reviewed
M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,
International Journal of Quantum Chemistry ( 13 ) page： 342-347 2013
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The dissociation modes of threading screw dislocations in 4H-SiC Reviewed
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) page： 591-600 2013
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Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET Reviewed
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) page： 439-447 2013
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Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching Reviewed
18. J. Tanaka K. Shiraishi
e-Journal of Surface Science and Nanotechnology, ( 11 ) page： 1-7 2013
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Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule Reviewed
Y. Takagi, K. Shiraishi, M. Kasu H. Sato,
Surface Science, page： 203?206 2013