Papers - SHIRAISHI Kenji
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シリコン原子はどこへ行く? まだまだ不思議な熱酸化 Invited
影島博之, 秋山亨, 白石賢二, 植松真司
応用物理学会誌 Vol. 91 ( 3 ) page: 155 - 159 2022.3
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First-principles study on silicon emission from interface into oxide during silicon thermal oxidation
Kageshima Hiroyuki, Akiyama Toru, Shiraishi Kenji
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 162 2023.8
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Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor
Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Sasaoka Kenji, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen, Yamada Kazuyoshi
CONDENSED MATTER Vol. 8 ( 2 ) 2023.6
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GaN薄膜成長機構解明への量子論計算科学のアプローチ
押山 淳, 白石 賢二
日本結晶成長学会誌 Vol. 50 ( 1 ) 2023.4
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GaN有機金属気相成長におけるデジタルツイン開発の現状
草場 彰, 寒川 義裕, 久保山 哲二, 新田 州吾, 白石 賢二, 押山 淳
日本結晶成長学会誌 Vol. 50 ( 1 ) 2023.4
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Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis
Nagahashi Tomoya, Karasawa Hajime, Horiike Ryota, Kimura Tomoya, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 4 ) 2023.4
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Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators Reviewed
Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi
Materials Science in Semiconductor Processing Vol. 157 page: 107306 2023.4
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Microscopic physical origin of charge traps in 3D NAND flash memories
Nanataki Fugo, Iwata Jun-Ichi, Chokawa Kenta, Araidai Masaaki, Oshiyama Atsushi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( SC ) 2023.4
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Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators
Ohata Yoshiki, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 157 2023.4
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Insight into the step flow growth of gallium nitride based on density functional theory
Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi
APPLIED SURFACE SCIENCE Vol. 613 2023.3
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Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-transfer torque Magnetic Random-Access Memory: A First-Principles Study Reviewed
K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi
IEEE Transactions on Magnetics Vol. 59 ( 4 ) 2023.2
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Atomic and electronic structures of interfaces between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN polar surfaces revealed by first-principles simulated annealing technique
Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
JOURNAL OF APPLIED PHYSICS Vol. 133 ( 6 ) 2023.2
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Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process Reviewed
Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi
Applied Physics Letters Vol. 121 ( 24 ) page: 243903 2022.12
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Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process
Ohata Yoshiki, Nakanishi Toru, Chokawa Kenta, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
APPLIED PHYSICS LETTERS Vol. 121 ( 24 ) 2022.12
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Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction
Ogawa Yutaro, Araidai Masaaki, Endoh Tetsuo, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS Vol. 132 ( 21 ) 2022.12
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Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states
Nanataki Fugo, Shiraishi Kenji, Iwata Jun-ichi, Matsushita Yu-ichiro, Oshiyama Atsushi
PHYSICAL REVIEW B Vol. 106 ( 15 ) 2022.10
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Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
Kusaba A., Nitta S., Shiraishi K., Kuboyama T., Kangawa Y.
APPLIED PHYSICS LETTERS Vol. 121 ( 16 ) 2022.10
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An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth
Boero Mauro, Bui Kieu My, Shiraishi Kenji, Ishisone Kana, Kangawa Yoshihiro, Oshiyama Atsushi
APPLIED SURFACE SCIENCE Vol. 599 2022.10
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Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study
Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Shiraishi Kenji
SURFACE SCIENCE Vol. 723 2022.9
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Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth
Kimura Tomoya, Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
PHYSICAL REVIEW B Vol. 106 ( 3 ) 2022.7
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Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces
Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SH ) 2022.7
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Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators
Ohata Yoshiki, Araidai Masaaki, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SH ) 2022.7
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Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction Reviewed
Tsunashi Shimizu, Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi
Physical Review Materials Vol. 5 ( 11 ) page: 114601-1 - 114601-12 2021.11
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Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction
Shimizu Tsunashi, Akiyama Toru, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
PHYSICAL REVIEW MATERIALS Vol. 5 ( 11 ) 2021.11
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Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth
Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi
APPLIED SURFACE SCIENCE Vol. 557 2021.8
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First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
Chokawa Kenta, Daigo Yoshiaki, Mizushima Ichiro, Yoda Takashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 8 ) 2021.8
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Investigation of Negative Charge Storage Mechanism in the Potassium Ion Electret by First-Principle Calculations Invited Reviewed
Nakanishi, Toru ; Miyajima, Takeshi ; Chokawa, Kenta ; Araidai, Masaaki ; Sugiyama, Tatsuhiko ; Hashiguchi, Gen ; Shiraishi, Kenji
IEEJ Transactions on Sensors and Micromachines Vol. 141 ( 8 ) page: 292 - 298 2021.8
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Defect-free interface between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN(0001) revealed by first-principles simulated annealing technique
Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi
APPLIED PHYSICS LETTERS Vol. 119 ( 1 ) 2021.7
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Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation
Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) 2021.5
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Theoretical study on the effect of H-2 and NH3 on trimethylgallium decomposition process in GaN MOVPE
Sakakibara Soma, Chokawa Kenta, Araidai Masaaki, Kusaba Akira, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 4 ) 2021.4
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Effects of the Compressibility of Turbulence on the Dust Coagulation Process in Protoplanetary Disks
Sakurai Yoshiki, Ishihara Takashi, Furuya Hitomi, Umemura Masayuki, Shiraishi Kenji
ASTROPHYSICAL JOURNAL Vol. 911 ( 2 ) 2021.4
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Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi
CRYSTAL GROWTH & DESIGN Vol. 21 ( 3 ) page: 1878 - 1890 2021.3
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First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model
Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen
CONDENSED MATTER Vol. 5 ( 4 ) 2020.12
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Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators
Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji
APPLIED PHYSICS LETTERS Vol. 117 ( 19 ) 2020.11
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カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討 Invited Reviewed
中西徹, 宮島岳史, 長川健太, 洗平昌晃, 白石賢二, 杉山達彦, 橋口原
「センサ・マイクロマシンと応用システム」 シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編] Vol. 37 page: 6 2020.10
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Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene
Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS Vol. 128 ( 12 ) 2020.9
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Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study Invited Reviewed
Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
ECS Transactions Vol. 98 ( 3 ) page: 37 2020.9
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Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO
Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 8 ) page: . 2020.8
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Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji
PHYSICAL REVIEW APPLIED Vol. 14 ( 1 ) 2020.7
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes
Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.
APPLIED PHYSICS LETTERS Vol. 117 ( 1 ) 2020.7
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Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface
Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7
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Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy
Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 14 ( 6 ) 2020.6
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Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE
Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 5 ) page: . 2020.5
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iop.org の [HTML] Full View Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface Invited Reviewed
Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
Japanese Journal of Applied Physics Vol. 59 ( SM ) page: SMMD01 2020.4
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Computational study of oxygen stability in vicinal m (10− 10)-GaN growth by MOVPE Invited Reviewed
Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Applied Physics Express Vol. 13 ( 5 ) page: 055507 2020.4
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A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics
Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics Invited Reviewed
Kieu My Bui, Mauro Boero, Kenji Shiraishi, Atsushi Oshiyama
Japanese Journal of Applied Physics Vol. 59 ( SG ) page: SGGK04 2020.2
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Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN
Oshiyama Atsushi, Bui Kieu My, Boero Mauro, Kangawa Yoshihiro, Shiraishi Kenji
2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020) page: 11 - 14 2020
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Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces
Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide
Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring
Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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Theoretical studies on the switching mechanism of VMCO memories
Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.
MICROELECTRONIC ENGINEERING Vol. 215 2019.7
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Self-forming and self-decomposing gallium oxide layers at the GaN/Al2O3 interfaces
Chokawa Kenta, Shiraishi Kenji
APPLIED PHYSICS EXPRESS Vol. 12 ( 6 ) 2019.6
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Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons
Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio
JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 31 ( 10 ) 2019.3
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First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy
Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi
JOURNAL OF CRYSTAL GROWTH Vol. 507 page: 421-424 2019.2
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Electronic structure analysis of core structures of threading dislocations in GaN
Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page: . 2019
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Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory
Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi
2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) page: 1 - 3 2019
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Atomistic study of SiN based ReRAM with high program/erase cycle endurance
Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji
IEICE ELECTRONICS EXPRESS Vol. 15 ( 23 ) 2018.12
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Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride
Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi
JOURNAL OF PHYSICAL CHEMISTRY C Vol. 122 ( 43 ) page: 24665-24671 2018.11
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Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SIC
Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS Vol. 124 ( 13 ) 2018.10
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Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories
Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Theoretical study of strain-induced modulation of the bandgap in SiC
Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7
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Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS Vol. 11 ( 6 ) 2018.6
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Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface (vol 11, 031002, 2018)
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS Vol. 11 ( 6 ) 2018.6
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Reconsideration of Si pillar thermal oxidation mechanism
Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Oxygen concentration dependence of silicon oxide dynamical properties
Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy
Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
Akiyama Toru, Hori Shinsuke, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Investigation of the GaN/ Al2O3 Interface by First Principles Calculations
Chokawa Kenta, Kojima Eiji, Araidai Masaaki, Shiraishi Kenji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 255 ( 4 ) 2018.4
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First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model
Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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First principles study of the effect of hydrogen annealing on SiC MOSFETs
Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice
Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS Vol. 11 ( 3 ) 2018.3
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Dust Coagulation Regulated by Turbulent Clustering in Protoplanetary Disks
Ishihara Takashi, Kobayashi Naoki, Enohata Kei, Umemura Masayuki, Shiraishi Kenji
ASTROPHYSICAL JOURNAL Vol. 854 ( 2 ) 2018.2
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Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN
Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 Vol. 86 ( 12 ) page: 41-49 2018
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DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy
Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi
APPLIED PHYSICS LETTERS Vol. 111 ( 14 ) 2017.10
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Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Shirakawa Hiroki, Yamaguchi Keita, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji
IEICE TRANSACTIONS ON ELECTRONICS Vol. E100C ( 10 ) page: 928-933 2017.10
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First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface
Araidai Masaaki, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 9 ) 2017.9
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Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy
Kusaba Akira, Kangawa Yoshihiro, Kempisty Pawel, Valencia Hubert, Shiraishi Kenji, Kumagai Yoshinao, Kakimoto Koichi, Koukitu Akinori
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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First principles investigation of SiC/AlGaN(0001) band offset
Kojima E., Endo K., Shirakawa H., Chokawa K., Araidai M., Ebihara Y., Kanemura T., Onda S., Shiraishi K.
JOURNAL OF CRYSTAL GROWTH Vol. 468 page: 758-760 2017.6
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First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN
Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.
JOURNAL OF CRYSTAL GROWTH Vol. 468 page: 950-953 2017.6
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Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy
Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Evaluation of energy band offset of Si 1-xSnx semiconductors by numerical calculation using density functional theory
Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons
Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio
JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 29 ( 11 ) 2017.3
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DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
Appl. Phys.Lett. ( 111 ) page: 141602 2017
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Defect Formation in SiO2 Formed by Thermal Oxidation of SiC
Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) page: 242-243 2017
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First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN
Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR Vol. 80 ( 1 ) page: 295-301 2017
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Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon
H.Kagechima, K.Shiraishi, T.Endoh
ECS Transactions Vol. 75 ( 5 ) page: 216-226 2016
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Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna Reviewed
N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada
Japanese Journal of Applied Physics Vol. 54(4) page: 025009 2015
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First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations Reviewed
A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Japanese Journal of Applied Physics Vol. 54(10) page: 101301 2015
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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence Reviewed
T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Surface Science Vol. 641 page: 174-179 2015
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Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations Reviewed
Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi
Applied Physics Express ( 7 ) page: 045202.1-3 2014.3
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A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
Molecular Physics: An International Journal at the Interface Between Chemistry and Physics ( 112 ) page: 393-397 2014.2
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A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
International Journal of Quantum Chemistry, ( 112 ) page: 393-397 2014.1
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Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure Reviewed
Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura
Optics Express ( 22 ) page: 1997-2006 2014.1
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Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations Reviewed
38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,
Appl. Phys. Exp. ( 7 ) page: 045202-045204 2014
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Role of nitrogen incorporation into Al2O3-based resistive random-access memory Reviewed
40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi
Appl. Phys. Exp. ( 7 ) page: 074202-074205 2014
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GeTe sequences in superlattice phase change memories and their electrical characteristics Reviewed
39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,
Appl. Phys. Lett. ( 104 ) page: 252106-252108 2014
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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Reviewed
Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
Materials ( 6 ) page: 3309-3360 2013.12
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Nanoscale (-10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode Reviewed
E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang
Tech. Digest of 2013 International Electron Devices Meeting page: P10.5.1-P10.5.4 2013.12
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations Reviewed
T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
Tech. Digest of 2013 International Electron Devices Meeting page: P.30.5.1-P.30.5.4 2013.12
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Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching Reviewed
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
IEEE Transactions on Electron Devices ( 60 ) page: 3400-3406 2013.11
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Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories Reviewed
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
Appl. Phys. Lett. ( 103 ) page: 93504 2013.10
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Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates Reviewed
M. Y. Yang, K. Kamiya, K. Shiraishi
AIP Advances ( 3 ) page: 102113 2013.10
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Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Reviewed
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,
ECS Trans. 58 page: 181-188 2013.10
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Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories Reviewed
Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi
Physical Review B ( 87 ) page: 155201 2013.8
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Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon Reviewed
M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
J. Appl. Phys. ( 114 ) page: 63701 2013.8
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Effect of Coulomb interaction on multi-electronwave packet dynamics Reviewed
T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi
AIP Conf. Proc. ( 1566 ) page: 421-422 2013.8
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Physical origins of ON-OFF switching in ReRAM via VO based conducting channels Reviewed
K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi
AIP Conf. Proc. ( 1566 ) page: 11-12 2013.8
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Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II Reviewed
K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi
Journal of Biomolecular Structure and Dynamics ( 31 ) page: 1-7 2013.7
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Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications Reviewed
N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,
Tech. Digest of 2013 Symposium on VLSI Tech. page: T130-T131 2013.6
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Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure Reviewed
Kenji Shiraisi, Taro Shiokawa, Genki Fujita
Jpn. J. Appl. Phys ( 52 ) page: 04CJ06 2013.4
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Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi
Jpn. J. Appl. Phys ( 52 ) page: 04CD11 2013.4
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On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors Reviewed
H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio
J. Phys.: Conf. Ser. ( 429 ) page: 12043 2013.4
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Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel Reviewed
C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi
Appl. Phys. Exp. ( 6 ) page: 65201 2013.4
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Calculation of the electron transfer coupling matrix element in diabatic reactions Reviewed
M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,
International Journal of Quantum Chemistry ( 13 ) page: 342-347 2013
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The dissociation modes of threading screw dislocations in 4H-SiC Reviewed
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) page: 591-600 2013
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Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET Reviewed
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) page: 439-447 2013
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Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching Reviewed
18. J. Tanaka K. Shiraishi
e-Journal of Surface Science and Nanotechnology, ( 11 ) page: 1-7 2013
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Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule Reviewed
Y. Takagi, K. Shiraishi, M. Kasu H. Sato,
Surface Science, page: 203?206 2013
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Origins of Negative Fixed Charge in Wet Oxidation for SiC Reviewed
19. Katsumasa Kamiya, Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Kenji Shiraishi,
Materials Science Forum page: 740-742, 409-412 2013
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Theoretical Study of N incorporation Effect during SiC Oxidation Reviewed
21. Shigenori Kato, Kenta Chokawa, Katsumasa Kamiya, Kenji Shiraishi,
Materials Science Forum, page: 740-742, 455-458 2013
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A New-Type of Defect Generation at a 4H-SiC/SiO2 interface by Oxidation Induced Compressive Strain Reviewed
20. Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,
Materials Science Forum, page: 740-742, 469-472 2013
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Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors Reviewed
5. Y. Ebihara, K. Kamiya, K. Shiraishi . A. Yamaguchi,
physica status solidi (c) ( 8 ) page: 2279-2281 2012
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Theoretical study of Si-based ionic switch Reviewed
15. Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama,
Applied Physics Letters ( 100 ) page: 203506-203509 2012
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Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide Reviewed
14. Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,
Applied Physics Letters ( 100 ) page: 212110-212112 2012
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Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed
13. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,
,Jpn. J. Appl. Phys. 51, Art. page: 02BM03 2012
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Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed
12. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ11 2012
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Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed
11. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ01 2012
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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Reviewed
10. K. Kamiya, M. Y. Yang, S.-G. Park,B. Magyari-Köpe,Y. Nishi, M. Niwa, K. Shiraishi
Appl. Phys. Lett. 100, Art. page: 073502 2012
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Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material Reviewed
N. Umezawa K. Shiraishi,,
Appl. Phys. Lett. 100, Art. page: 092904 2012
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Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed
8. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,
Jpn. J. Appl. Phys. 51, Art. page: 02BM03 2012
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Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed
7. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ11 2012
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Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed
6. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,
Jpn. J. Appl. Phys. 51, Art. page: 02BJ01 2012
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Physics in Designing Desirable ReRAM Stack Structure -Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal
4. Katsumasa Kamiya, Moon Young Yang, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi,
Technical Digest of 2012 International Electron Devices Meeting, page: 478-481 2012
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Atomistic Design of Guiding Principles for High Quality Metal-Oxide-Nitride-Oxide-Semiconductor Memories:First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers Reviewed
1. K. Yamguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,
Jpn. J. Appl. Phys. 50 Art. page: 04DD05 2011
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Calculation of the Electron Transfer Coupling Matrix Element in Diabatic Reactions Reviewed
16. Mitsuo Shoji, Kyohei Hanaoka, Akimasa Sato, Daiki Kondo, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi,
International Journal of Quantum Chemistry, DOI: 10.1002/qua. page: 24074 2011
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An atomistic study on hydrogenation effects toward quality improvement of program/erase cycle of MONOS- type memory Reviewed
4. Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi,
IEICE Transactions ( E94-C ) page: 693-698 2011
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Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency Reviewed
3. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu,
Appl. Phys. Lett. 99, Art. page: 151108 2011
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Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed
2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh,
Jpn. J. Appl. Phys. 50 Art. page: 04DD04 2011
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Guiding Principle of Highly Scalable MONOS-Type Memory
1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,
ESC Transaction, ( 41-7 ) page: 71-78 2011
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First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations
3. K. Yamaguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,
Proceeding of 2011 International Conference on Simulation of Semiconductor Processes and Devices page: 215-217 2011
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Fundamental origin of excellent low-noise property in 3D Si-MOSFETs -Impact of charge-centroid in the channel due to quantum effect on 1/f noise-
2. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori,
2011 Technical Digest of 2011 International Electron Devices Meetings ( 27 ) page: 7-1-4 2011