Papers - SHIRAISHI Kenji
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Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface
Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7
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Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy
Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 14 ( 6 ) 2020.6
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Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE
Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 5 ) page： . 2020.5
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iop.org の [HTML] Full View Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface Invited Reviewed
Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
Japanese Journal of Applied Physics Vol. 59 ( SM ) page： SMMD01 2020.4
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Computational study of oxygen stability in vicinal m (10− 10)-GaN growth by MOVPE Invited Reviewed
Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Applied Physics Express Vol. 13 ( 5 ) page： 055507 2020.4
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A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics
Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics Invited Reviewed
Kieu My Bui, Mauro Boero, Kenji Shiraishi, Atsushi Oshiyama
Japanese Journal of Applied Physics Vol. 59 ( SG ) page： SGGK04 2020.2
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Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN
Oshiyama Atsushi, Bui Kieu My, Boero Mauro, Kangawa Yoshihiro, Shiraishi Kenji
2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020) page： 11 - 14 2020
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Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces
Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide
Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring
Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 11 ) 2019.11
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Theoretical studies on the switching mechanism of VMCO memories
Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.
MICROELECTRONIC ENGINEERING Vol. 215 2019.7
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Self-forming and self-decomposing gallium oxide layers at the GaN/Al2O3 interfaces
Chokawa Kenta, Shiraishi Kenji
APPLIED PHYSICS EXPRESS Vol. 12 ( 6 ) 2019.6
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Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons
Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio
JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 31 ( 10 ) 2019.3
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First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy
Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi
JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 421-424 2019.2
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Electronic structure analysis of core structures of threading dislocations in GaN
Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page： . 2019
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Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory
Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi
2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) page： 1 - 3 2019
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Atomistic study of SiN based ReRAM with high program/erase cycle endurance
Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji
IEICE ELECTRONICS EXPRESS Vol. 15 ( 23 ) 2018.12
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Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride
Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi
JOURNAL OF PHYSICAL CHEMISTRY C Vol. 122 ( 43 ) page： 24665-24671 2018.11
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Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SIC
Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji
JOURNAL OF APPLIED PHYSICS Vol. 124 ( 13 ) 2018.10