Papers - SHIRAISHI Kenji
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First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN
Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.
JOURNAL OF CRYSTAL GROWTH Vol. 468 page: 950-953 2017.6
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Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy
Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Evaluation of energy band offset of Si 1-xSnx semiconductors by numerical calculation using density functional theory
Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons
Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio
JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 29 ( 11 ) 2017.3
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DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
Appl. Phys.Lett. ( 111 ) page: 141602 2017
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Defect Formation in SiO2 Formed by Thermal Oxidation of SiC
Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) page: 242-243 2017
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First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN
Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR Vol. 80 ( 1 ) page: 295-301 2017
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Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon
H.Kagechima, K.Shiraishi, T.Endoh
ECS Transactions Vol. 75 ( 5 ) page: 216-226 2016
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Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna Reviewed
N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada
Japanese Journal of Applied Physics Vol. 54(4) page: 025009 2015
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First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations Reviewed
A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Japanese Journal of Applied Physics Vol. 54(10) page: 101301 2015
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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence Reviewed
T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Surface Science Vol. 641 page: 174-179 2015
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Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations Reviewed
Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi
Applied Physics Express ( 7 ) page: 045202.1-3 2014.3
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A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
Molecular Physics: An International Journal at the Interface Between Chemistry and Physics ( 112 ) page: 393-397 2014.2
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A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
International Journal of Quantum Chemistry, ( 112 ) page: 393-397 2014.1
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Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure Reviewed
Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura
Optics Express ( 22 ) page: 1997-2006 2014.1
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Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations Reviewed
38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,
Appl. Phys. Exp. ( 7 ) page: 045202-045204 2014
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Role of nitrogen incorporation into Al2O3-based resistive random-access memory Reviewed
40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi
Appl. Phys. Exp. ( 7 ) page: 074202-074205 2014
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GeTe sequences in superlattice phase change memories and their electrical characteristics Reviewed
39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,
Appl. Phys. Lett. ( 104 ) page: 252106-252108 2014
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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Reviewed
Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
Materials ( 6 ) page: 3309-3360 2013.12
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Nanoscale (-10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode Reviewed
E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang
Tech. Digest of 2013 International Electron Devices Meeting page: P10.5.1-P10.5.4 2013.12