論文 - 柴山 茂久
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Ferroelectric phase stabilization of HfO2 by nitrogen doping 査読有り 国際誌
Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi
Applied Physics Express 9 巻 頁: 091501-1 - 091501-4 2016年4月
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Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact 査読有り 国際誌
Akihiro Suzuki, Osamu Nakatsuka, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Masashi Kurosawa, Shigeaki Zaima
Japanese Journal of Applied Physics 55 巻 頁: 04EB12-1 - 04EB12-6 2016年3月
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Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures 査読有り 国際誌
Takashi Yamaha, Shigehisa Shibayama, Takanori Asano, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
Applied Physics Letters 108 巻 頁: 061909-1 - 061909-5 2016年2月
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Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer 査読有り 国際誌
Akihiro Suzuki, Osamu Nakatsuka, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Masashi Kurosawa, Shigeaki Zaima
Applied Physics Letters 107 巻 頁: 212103-1 - 212103-5 2015年11月
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Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition 査読有り 国際誌
Shigehisa Shibayama, Teppei Yoshida, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Applied Physics Letters 106 巻 頁: 062107-1 - 062107-4 2015年2月
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Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces 査読有り 国際誌
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 53 巻 頁: 08LD02-1 - 08LD02-6 2014年6月
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Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition 査読有り 国際誌
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 53 巻 頁: 08LD03-1 - 08LD03-6 2014年6月
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Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties 査読有り 国際誌
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Thin Solid Films 557 巻 頁: 282 - 287 2014年4月
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Stabilized formation of tetragonal ZrO2 thin film with high permittivity 査読有り 国際誌
Kimihiko Kato, Takatoshi Saito, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Thin Solid Films 557 巻 頁: 192 - 196 2014年4月
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Reduction of Interface State Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface 査読有り 国際誌
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
ECS Transactions 58 巻 ( 9 ) 頁: 301 - 308 2013年8月
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Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge Structure 査読有り 国際誌
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Applied Physics Letters 103 巻 頁: 082114-1 - 082114-4 2013年8月
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Interfacial Reaction Mechanisms in Al2O3/Ge Structure by Oxygen Radical Process 査読有り 国際誌
Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 52 巻 頁: 04AC08-1 - 04AC08-7 2013年4月
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Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures 査読有り 国際誌
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 52 巻 頁: 01AC04-1 - 01AJ01-6 2013年1月
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Improvement of Al2O3/Ge interfacial properties by O2-annealing 査読有り 国際誌
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
Thin Solid Films 520 巻 ( 8 ) 頁: 3397 - 3401 2012年2月
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Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation 査読有り 国際誌
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 51 巻 頁: 01AJ01-1 - 01AJ01-5 2012年1月