論文 - 柴山 茂久
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Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode 査読有り 国際共著 国際誌
Galih Ramadana Suwito, Masahiro Fukuda, Edi Suprayoga, Masahiro Ohtsuka, Eddwi Hesky Hasdeo, Ahmad Ridwan Tresna Nugraha, Mitsuo Sakashita, Shigehisa Shibayama, Osamu Nakatsuka
Applied Physics Letters 117 巻 頁： 232104-1 - 232104-5 2020年12月
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り 査読有り 国際誌
Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, Mitsuo Sakashita
ECS Transactions 98 巻 ( 5 ) 頁： 149 - 156 2020年9月
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Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks 査読有り 国際誌
Takuma Doi, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, Osamu Nakatsuka
Applied Physics Letters 116 巻 頁： 222104-1 - 222104-5 2020年6月
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Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1-xSnx epitaxial layers 査読有り 国際誌
Jihee Jeon, Shigehisa Shibayama, Osamu Nakatsuka
Japanese Journal of Applied Physics 59 巻 頁： SLLF02-1 - SLLF02-6 2020年4月
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Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing 査読有り 国際誌
Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita, Osamu Nakatsuka
Japanese Journal of Applied Physics 59 巻 頁： SMMA04-1 - SMMA04-5 2020年4月
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Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer 査読有り 国際誌
Kentaro Hashimoto, Takuma Doi, Shigehisa Shibayama, Osamu Nakatsuka
Japanese Journal of Applied Physics 59 巻 頁： SGGD16-1 - SGGD16-6 2020年2月
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications 招待有り 査読有り 国際誌
Osamu Nakatsuka, Masahiro Fukuda, Mitsuo Sakashita, Masashi Kurosawa, Shigehisa Shibayama, Shigeaki Zaima
ECS Transactions 92 巻 ( 4 ) 頁： 41 - 46 2019年7月
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 査読有り
Kazuki Senga, Shigehisa Shibayama, Mitsuo Sakashita, Shigeaki Zaima, Osamu Nakatsuka
2019 19th International Workshop on Junction Technology (IWJT) 頁： 1 - 2 2019年6月
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Erratum: "Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment" 国際誌
Takuma Doi, Wakana Takeuchi, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 58 巻 頁： SB9401 2019年3月
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment 査読有り 国際誌
Takuma Doi, Wakana Takeuchi, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 58 巻 頁： SBBD05-1 - SBBD05-5 2019年2月
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Thermodynamic control of ferroelectric-phase formation in HfxZr1-xO2 and ZrO2 査読有り 国際誌
Shigehisa Shibayama, Tomonori Nishimura, Shinji Migita, Akira Toriumi
Journal of Applied Physics 124 巻 頁： 184101-1 - 184101-7 2018年11月
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Nucleation-driven ferroelectric phase formation in ZrO2 thin films - What is different in ZrO2 from HfO2? 査読有り
Shigehisa Shibayama, Tomonori Nishimura, Shinji Migita, Akira Toriumi
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) 頁： 116 - 118 2018年3月
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Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm 査読有り 国際誌
Xuan Tian, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi
Applied Physics Letters 112 巻 頁： 102902-1 - 102902-5 2018年3月
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Sub-nm EOT ferroelectric HfO2 on p+Ge with highly reliable field cycling properties 査読有り
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi
2017 IEEE International Electron Devices Meeting (IEDM) 頁： 37.1.1 - 37.1.4 2017年12月
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Kinetic pathway of the ferroelectric phase formation in doped HfO2 films 査読有り 国際誌
Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi
Journal of Applied Physics 122 巻 頁： 124104-1 - 124104-7 2017年9月
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General relationship for cation and anion doping effects on ferroelectric HfO2 formation 査読有り
Lun Xu, Shigehisa Shibayama, Kazutaka Izukashi, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi
2016 IEEE International Electron Devices Meeting (IEDM) 頁： 25.2.1 - 25.2.4 2016年12月
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Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys 査読有り 国際誌
Yuki Nagae, Masashi Kurosawa, Shigehisa Shibayama, Masaaki Araidai, Mitsuo Sakashita, Osamu Nakatsuka, Kenji Shiraishi, Shigeaki Zaima
Japanese Journal of Applied Physics 55 巻 頁： 08PE04-1 - 08PE04-4 2016年7月
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Effect of GeO2 deposition temperature in atomic layer deposition on elecrical properties of Ge gate stack 査読有り 国際誌
Masayuki Kanematsu, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
Japanese Journal of Applied Physics 55 巻 頁： 08PC05-1 - 08PC05-5 2016年6月
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Study of wake-up and fatigue properties in doped and undoped ferroelectric HfO2 in conjunction with piezo-response force microscopy analysis 査読有り
Shigehisa Shibayama, Lun Xu, Shinji Migita, Akira Toriumi
2016 IEEE Symposium on VLSI Technology 頁： 1 - 2 2016年6月
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Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks 査読有り 国際誌
Tomonori Nishimura, Lun Xu, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi
Japanese Journal of Applied Physics 55 巻 頁： 08PB01-1 - 08PB01-4 2016年6月