論文 - 柴山 茂久
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Emergence of negative differential resistance through hole resonant tunneling in GeSn/GeSiSn double barrier structure 査読有り
Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
IEEE Journal of the Electron Devices Society 13 巻 頁： 79 - 85 2025年1月
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Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation 査読有り
Shigehisa Shibayama, Kaito Shibata, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Applied Physics Express 17 巻 頁： 115503-1 - 115503-4 2024年11月
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Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique 査読有り 国際共著
Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Osamu Nakatsuka
Japanese Journal of Applied Physics 64 巻 頁： 01SP11-1 - 01SP11-7 2025年1月
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Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer 査読有り
Shigehisa Shibayama, Shunsuke Mori, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
ECS Transactions (ECST) 114 巻 ( 2 ) 頁： 215 - 224 2024年10月
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Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping 査読有り
Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Materials Science in Semiconductor Processing 176 巻 頁： 108302-1 - 108302-8 2024年6月
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Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films 査読有り
Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Shiyu Zhang, Shigehisa Shibayama, Masashi Kurosawa, and Osamu Nakatsuka
Materials Science in Semiconductor Processing 頁： 108304-1 - 108304-7 2024年6月
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Tensile-strained Ge1-xSnx layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction 招待有り 査読有り
Tatsuma Hiraide, Shigehisa Shibayama, Masashi Kurosawa, Mitsuo Sakashita, and Osamu Nakatsuka
Japanese Journal of Applied Physics 63 巻 ( 4 ) 頁： 045505-1 - 045505-7 2024年4月
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Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence 招待有り 査読有り
Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
Japanese Journal of Applied Physics 62 巻 頁： 075506-1 - 075506-8 2023年7月
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Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy 査読有り
Kazuaki Fujimoto, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
Applied Physics Express 2023年4月
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Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り
Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
Materials Science in Semiconductor Processing 161 巻 頁： 107462 2023年3月
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Layer transfer of ultrathin Ge crystals segregated on Al/Ge(111) structure 査読有り
Keigo Matsushita, Akio Ohta, Shigehisa Shibayama, Tomoharu Tokunaga, Noriyuki Taoka, Katsunori Makihara, and Seiichi Miyazaki
Japanese Journal of Applied Physics 62 巻 頁： SG1007-1 - SG1007-8 2023年2月
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Crystalline and optoelectronic properties of Ge1-xSnx/high-Si-content-SiyGe1-x-ySnx double-quantum wells grown with low-temperature molecular beam epitaxy 査読有り
S. Zhang, S. Shibayama, and O. Nakatsuka
Semiconductor Science and Technology 38 巻 頁： 015018-1 - 015018-10 2022年12月
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Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction 査読有り
Wakana Takeuchi, Eiji Kagoshima, Kazushi Sumitani, Yasuhiko Imai, Shigehisa Shibayama, Mitsuo Sakashita, Shigeru Kimura, Hidemoto Tomita, Tsuyoshi Nishiwaki, and Hirokazu Fujiwara
Japanese Journal of Applied Physics 61 巻 頁： SC1072-1 - SC1072-10 2022年3月
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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs 査読有り
Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, and Osamu Nakatsuka
Japanese Journal of Applied Physics 61 巻 頁： 021007-1 - 021007-7 2022年2月
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Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts 査読有り
Kentaro Kasahara, Kazuki Senga, Mitsuo Sakashita, Shigehisa Shibayama, and Osamu Nakatsuka
IEEE Journal of the Electron Devices Society 10 巻 頁： 744 - 750 2021年12月
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Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height 査読有り
Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Kazutoshi Kojima, Mitsuaki Shimizu, and Osamu Nakatsuka
Applied Physics Express 15 巻 頁： 015501-1 - 015501-4 2021年12月
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Photoluminescence properties of heavily Sb doped Ge1-xSnx and heterostructure design favorable for n+-Ge1-xSnx active layer 査読有り
Shiyu Zhang, Masahiro Fukuda, Jihee Jeon, Mitsuo Sakashita, Shigehisa Shibayama, and Osamu Nakatsuka
Japanese Journal of Applied Physics 61 巻 頁： SA1004-1 - SA1004-8 2021年12月
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Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion 査読有り
Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Mitsuaki Shimizu, and Osamu Nakatsuka
Japanese Journal of Applied Physics 60 巻 頁： 075503-1 - 075503-6 2021年6月
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property
Kentaro Kasahara, Kazuki Senga, Mitsuo Sakashita, Shigehisa Shibayama, and Osamu Nakatsuka
The 20th International Workshop on Junction Technology 2021 (IWJT2021) 2021年6月
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Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System 査読有り
Shigehisa Shibayama, Jotaro Nagano, Koji Asaka, Mitsuo Sakashita, and Osamu Nakatsuka
ACS Applied Electronic Materials 3 巻 頁： 2203 - 2211 2021年4月