研究者詳細 - 堤　隆嘉

論文 - 堤　隆嘉

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Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C2F6/H2 plasma-enhanced chemical vapor deposition

Imai, S; Kondo, H; Hyungjun, C; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 1 ) 2019年1月

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching 査読有り

Zhang Yan, Imamura Masato, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma 査読有り

Zecheng Liu, Kenji Ishikawa, Masato Imamura, Takayoshi Tsutsumi, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：Japan Society of Applied Physics

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

DOI： 10.7567/JJAP.57.06JD01

Web of Science

Scopus

Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition 査読有り

Hirotsugu Sugiura, Lingyun Jia, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：Japan Society of Applied Physics

Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed. The sp2 fraction of the a-C films reached a minimum of 46%, where the CH3 density was maximum for a residence time of 6 ms. The sp2 fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties.

DOI： 10.7567/JJAP.57.06JE03

Web of Science

Scopus

Nanographene synthesis employing in-liquid plasmas with alcohols or hydrocarbons 査読有り

Atsushi Ando, Kenji Ishikawa, Hiroki Kondo, Takayoshi Tsutsumi, Keigo Takeda, Takayuki Ohta, Masafumi Ito, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 2 ) 2018年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japan Society of Applied Physics

Graphenes of nanometer-scale grain size (nanographenes) were synthesized using in-liquid plasmas with alcohols or hydrocarbons. This method of nanographene synthesis showed a trade-off relationship between crystallinity and synthesis rate. The high crystallinity of nanographenes synthesized with alcohols was evaluated from the small full width at half maxima (FWHM) of the G band in Raman scattering spectra. On the other hand, in the case of using hydrocarbons such as n-hexane and benzene, a significantly high synthesis rate was obtained but the crystallinity of nanographenes was low. It was found that hydroxyl groups and oxygen atoms of liquid sources play important roles in determining the crystallinity of synthesized nanographenes.

DOI： 10.7567/JJAP.57.026201

Web of Science

Scopus

Rapid growth of micron-sized graphene flakes using in-liquid plasma employing iron phthalocyanine-added ethanol 査読有り

Tomoki Amano, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Keigo Takeda, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Applied Physics Express 11 巻 ( 1 ) 2018年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japan Society of Applied Physics

Giant graphene flakes on the micron scale were synthesized and grown in plasmas in liquid-phase pure ethanol with added iron phthalocyanine (FePc) in a solvent. At atmospheric pressure, plasmas were generated in the gas phase filled with Ar and in the liquid phases comprising bubbles and liquid solutions. In the mixture of FePc in ethanol, nanographene sheets aggregated to form giant graphene flakes, as confirmed by the D, G, and 2D bands in the corresponding Raman spectra. Therefore, a bottom-up approach of graphite synthesis from pure ethanol with additives and a catalyst was realized by in-liquid plasma processing.

DOI： 10.7567/APEX.11.015102

Web of Science

Scopus

Real-time control of a wafer temperature for uniform plasma process

Tsutsumi, T; Fuknaga, Y; Ishikawa, K; Kondo, H; Sekine, M; Hori, M

2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 頁： . 2018年

Measurement of F-, O- and CF3- densities in 60 and 100 MHz asymmetric capacitively coupled plasma discharge produced in an Ar/O2/C4F8 gas mixture 査読有り

N. Sirse, T. Tsutsumi, M. Sekine, M. Hori, A. R. Ellingboe

Journal of Physics D: Applied Physics 50 巻 ( 33 ) 頁： 335205 2017年7月

Temperature dependence of protection layer formation on organic trench sidewall in H2/N2 plasma etching with control of substrate temperature 査読有り

Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

Japanese Journal of Applied Physics 56 巻 ( 7 ) 頁： 076202 2017年6月

Investigation of the radially resolved oxygen dissociation degree and local mean electron energy in oxygen plasmas in contact with different surface materials 査読有り

T. Tsutsumi, A. Greb, A. R. Gibson, M. Hori, D. O'Connell, T. Gans

Journal of Applied Physics 121 巻 ( 14 ) 頁： 143301 2017年4月

Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas 査読有り

T. Ueyama, Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Iwata, Y. Ohya, H. Sugai, M. Hori

Japanese Journal of Applied Physics 56 巻 ( 6S2 ) 頁： 06HC03 2017年3月

Absolute density of precursor SiH₃ radicals and H atoms in H2-diluted SiH₄ gas plasma for deposition of microcrystalline silicon films 査読有り

Y. Abe, K. Ishikawa, K. Takeda, T. Tsutsumi, A. Fukushima, H. Kondo, M. Sekine, M. Hori

Applied Physics Letters 110 巻 ( 4 ) 頁： 043902 2017年1月

Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices 査読有り

T. Tsutsumi, M. Zaitsu, A. Kobayashi, N. Kobayashi, M. Hori

PLASMA NANO SCIENCE AND TECHNOLOGY 77 巻 ( 3 ) 頁： 25 - 28 2017年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：ELECTROCHEMICAL SOC INC

Plasma processes for deposition and etching are required for development of the next generation semiconductor devices. To achieve high performance of nanoscale devices, the continuous development of fabrication processes is necessary. An atomic layer etching (ALE) process achieves this continuous development, since the process has advantages such as more precise, higher controllability and repeatability. We have developed ALE process for SiO2 to achieve high controllability and repeatability. The ALE process is a cyclic process composed of two steps: a first step which deposits a fluorocarbon film on the SiO2 surface using an Ar/C4F8 plasma, followed by an O-2 plasma etching step. The O-2 plasma etching suppresses forming a carbon-rich film on the target material surface and maintains the chamber conditions by removing the fluorocarbon on the chamber walls. The ALE process for SiO2 exhibits high reproducibility and has the potential to allow uniform EPC values over large wafer surfaces.

DOI： 10.1149/07703.0025ecst

Web of Science

Atomic layer etching of SiO₂ by alternating an O₂ plasma with fluorocarbon film deposition 査読有り

T. Tsutsumi, H. Kondo, M. Hori, M. Zaitsu, A. Kobayashi, T. Nozawa, N. Kobayashi

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 巻 ( 1 ) 頁： 01A103 2016年11月

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD 査読有り

B. B. Sahu, Y. Y. Yin, T. Tsutsumi, M. Hori, Jeon G. Han

Physical Chemistry Chemical Physics 18 巻 ( 18 ) 頁： 13033 2016年4月

Control of Internal Plasma Parameters Toward Atomic Level Processing 査読有り

M. Sekine, T. Tsutsumi, Y. Fukunaga, K. Takeda, H. Kondo, K. Ishikawa, M. Hori

ECS Transactions 75 巻 ( 6 ) 頁： 21 2016年

Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis 査読有り

T. Tsutsumi, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

Japanese Journal of Applied Physics 55 巻 ( 1S ) 頁： 01AB04 2015年11月

Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching 査読有り

T. Tsutsumi, Y. Fukunaga, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

IEEE Transactions on Semiconductor Manufacturing 28 巻 ( 4 ) 頁： 515 2015年8月

Wavelength Dependence for Silicon-Wafer Temperature Measurement by Autocorrelation-type Frequency-Domain Low-Coherence Interferometry 査読有り

T. Tsutsumi, T. Ohta, K Takeda, M. Ito, M. Hori

Applied Optics 54 巻 ( 23 ) 頁： 7088 2015年8月

Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry 査読有り

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Japanese Journal of Applied Physics 54 巻 ( 1S ) 頁： 01AB03 2014年11月

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