研究者詳細 - 堤　隆嘉

論文 - 堤　隆嘉

分割表示 81 件中 1 - 20 件目／全件表示 >>

Recovery of plasma-induced defects in SiO2/Si stack: defect activation and hydrogen's effects

Nunomura, S; Tsutsumi, T; Hori, M

APPLIED PHYSICS EXPRESS 18 巻 ( 3 ) 2025年3月

Achieving the In-plane Orientation of Carbon Nanowalls: Implications for Sensing, Energy Harvesting, and Nanobio Devices

Iba, S; Kondo, H; Tsutsumi, T; Ishikawa, K; Hiramatsu, M; Hori, M

ACS APPLIED NANO MATERIALS 8 巻 ( 6 ) 頁： 2660 - 2668 2025年2月

Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor

Hu, LG; Tsutsumi, T; Kobayashi, N; Ishikawa, K; Hori, M

APPLIED SURFACE SCIENCE 681 巻 2025年2月

SiO2/Si interface oxidation and defects in O2 plasma processing

Nunomura, S; Tsutsumi, T; Hori, M

APPLIED PHYSICS EXPRESS 18 巻 ( 2 ) 2025年2月

Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning

Ando, Y; Kondo, H; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

DIAMOND AND RELATED MATERIALS 151 巻 2025年1月

Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO2 by Cryogenic-Assisted Surface Reactions

Hsiao, SN; Sekine, M; Britun, N; Mo, MKT; Imai, Y; Tsutsumi, T; Ishikawa, K; Iijima, Y; Suda, R; Yokoi, M; Kihara, Y; Hori, M

SMALL METHODS 8 巻 ( 12 ) 2024年12月

Radical, ion, and photon's effects on defect generation at SiO2/Si interface during plasma etching

Nunomura, S; Tsutsumi, T; Takada, N; Fukasawa, M; Hori, M

APPLIED SURFACE SCIENCE 672 巻 2024年11月

High-Speed Removal Process for Organic Polymers by Non-Thermal Atmospheric-Pressure Spark Discharge at Room Temperature and Its Mechanism

Sakamoto, Y; Tsutsumi, T; Tanaka, H; Ishikawa, K; Hashizume, H; Hori, M

COATINGS 14 巻 ( 10 ) 2024年10月

In situ atom-resolved observation of Si (111) 7x7 surface with F radical and Ar ion irradiation simulated atomic layer etching

Tsutsumi, T; Asano, A; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 42 巻 ( 3 ) 2024年5月

O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery

Nunomura, S; Tsutsumi, T; Sakata, I; Hori, M

JOURNAL OF APPLIED PHYSICS 135 巻 ( 5 ) 頁： 053301 2024年2月

Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment

Osonio, A; Tsutsumi, T; Mukherjee, B; Borude, R; Kobayashi, N; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 12 ) 2023年12月

Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6

Yoshie, T; Ishikawa, K; Nguyen, TTN; Hsiao, SN; Tsutsumi, T; Sekine, M; Hori, M

APPLIED SURFACE SCIENCE 638 巻 2023年11月

MEMS nozzle for dry-capturing lily pollens in array and fixing on culture media for plasma bio-applications

Liu, QY; Sugiyama, S; Han, G; Tsutsumi, T; Tanaka, H; Sasaki, M

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SN ) 2023年11月

Deposition of carbon-based materials directly on copper foil and nickel foam as 2D-and 3D-networked metal substrates by in-liquid plasma

Dela Vega, MSDC; Nguyen, TTN; Kondo, H; Tsutsumi, T; Ishikawa, K; Hori, M

PLASMA PROCESSES AND POLYMERS 20 巻 ( 11 ) 2023年11月

Development of an experimental system for cell viability assays of yeasts using gas-temperature controllable plasma jets

Yoshimura, S; Otsubo, Y; Yamashita, A; Johzuka, K; Tsutsumi, T; Ishikawa, K; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SL ) 2023年9月

Plasma processing and annealing for defect management at SiO2/Si interface

Nunomura, S; Tsutsumi, T; Sakata, I; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 41 巻 ( 5 ) 2023年9月

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

Hsiao, SN; Britun, N; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

VACUUM 210 巻 2023年4月

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Osonio, AP; Tsutsumi, T; Oda, Y; Mukherjee, B; Borude, R; Kobayashi, N; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 40 巻 ( 6 ) 2022年12月

Indoor Floor Heel Mark Removal Using Spark Discharges and Pressurized Airflow

Sakamoto, Y; Tsutsumi, T; Tanaka, H; Ishikawa, K; Hashizume, H; Hori, M

COATINGS 12 巻 ( 12 ) 2022年12月

Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis

Kurokawa, J; Kondo, H; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

VACUUM 205 巻 2022年11月

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