Faculty Profiles - SUDA Jun

Papers - SUDA Jun

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Growth of cubic GaN by metal organic molecular beam epitaxy

Suda J., Kurobe T., Matsunami H.

Shinku/Journal of the Vacuum Society of Japan Vol. 43 ( 4 ) page： 512 - 517 2000

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Shinku/Journal of the Vacuum Society of Japan

Growth of GaN on sapphire (0001) substrates by metalorganic molecular beam epitaxy (MOMBE) was studied using triethyl gallium (TEGa) and rf plasma excited active nitrogen. A series of samples were grown under various TEGa flow rates while growth temperature (800 °C) and nitrogen supply were fixed. With increasing TEGa flow rate, the dominant polytype of grown layer changed from hexagonal GaN (h-GaN) to cubic GaN (c-GaN). From the dependence of growth rate on TEGa flow rates, it was revealed that a Ga-stabilized growth condition results in the growth of c-GaN. This preferential growth mode was applied to the growth of c-GaN on cubic 3C-SiC (001) substrates.

DOI： 10.3131/jvsj.43.512

Scopus

Preferential growth mode of cubic GaN by metalorganic molecular beam epitaxy on sapphire (0001) substrates

Suda J, Kurobe T, Masuda T, Matsunami H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 176 ( 1 ) page： 503 - 507 1999.11

Preferential growth mode of cubic GaN by metalorganic molecular beam epitaxy on sapphire (0001) substrates

Suda J., Kurobe T., Masuda T., Matsunami H.

Physica Status Solidi (A) Applied Research Vol. 176 ( 1 ) page： 503 - 507 1999.11

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi (A) Applied Research

Growth of GaN on sapphire (0001) substrates by metalorganic molecular beam epitaxy (MOMBE) was studied using triethyl gallium (TEGa) and rf-plasma excited active nitrogen. A series of samples were grown under various TEGa flow rates while growth temperature (800 °C) and nitrogen supply were fixed. At a very low TEGa flow rate, the grown layer was polycrystalline. With increasing TEGa flow rate, the dominant polytype of the grown layer changed from hexagonal GaN (h-GaN) to cubic GaN (c-GaN). From the dependence of growth rate on TEGa flow rates, it was revealed that a Ga-stabilized growth condition results in the growth of c-GaN. By increasing growth time, the c-GaN composition became larger, indicating preferential growth of c-GaN.

DOI： 10.1002/(SICI)1521-396X(199911)176:1<503::AID-PSSA503>3.0.CO;2-1

Scopus

Growth evolution of cubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxy

Suda J, Kurobe T, Matsunami H

JOURNAL OF CRYSTAL GROWTH Vol. 201 page： 437 - 440 1999.5

Growth evolution of cubic-GaN on sapphire (0 0 0 1) substrate by metalorganic molecular beam epitaxy

Suda J., Kurobe T., Matsunami H.

Journal of Crystal Growth Vol. 201 page： 437 - 440 1999.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Cubic GaN (c-GaN) could be grown on sapphire (0 0 0 1) substrates by metalorganic molecular beam epitaxy (MOMBE) under a Ga-rich condition at a relatively high growth temperature (800 °C). The growth was carried out with two different substrate treatments, either nitridation or deposition of a GaN buffer layer at a low temperature (400 °C). In both case, the grown layer contains not only c-GaN but also hexagonal GaN (h-GaN). The ratio of h-GaN to c-GaN is greatly reduced by using the buffer layer. Based on the experimental results, a growth model of c-GaN is proposed.

DOI： 10.1016/S0022-0248(98)01370-0

Scopus

Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

Kurobe T., Sekiguchi Y., Suda J., Yoshimoto M., Matsunami H.

Applied Physics Letters Vol. 73 ( 16 ) page： 2305 - 2307 1998.12

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

Preferential growth of high-quality cubic GaN on sapphire (0001) substrates was realized at 800°C under a Ga-rich condition by metal organic molecular beam epitaxy. Hexagonal GaN was grown under a N-rich condition. On the contrary, under the Ga-rich condition, the growing layer changed from a hexagonal phase to a cubic phase as the growth proceeds, which was verified by in situ reflection high-energy electron diffraction. The low-temperature photoluminescence (PL) of this layer was dominated by a sharp and intense excitonic emission of cubic GaN, indicating high crystal quality. The results of PL and x-ray diffraction indicate that the polytype of GaN can be intentionally controlled by changing V/III ratios without serious degradation of crystal quality. In addition, enhancement of cubic phase growth by using a low-temperature grown buffer layer is also discussed. © 1998 American Institute of Physics.

DOI： 10.1063/1.121805

Scopus

Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

Kurobe T, Sekiguchi Y, Suda J, Yoshimoto M, Matsunami H

APPLIED PHYSICS LETTERS Vol. 73 ( 16 ) page： 2305 - 2307 1998.10

Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

Suda J, Ogawa M, Sakurai K, Kawakami Y, Fujita S, Fujita S

JOURNAL OF CRYSTAL GROWTH Vol. 184 page： 863 - 866 1998.2

Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

Suda J., Ogawa M., Sakurai K., Kawakami Y., Fujita S., Fujita S.

Journal of Crystal Growth Vol. 184-185 page： 863 - 866 1998

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Optical properties are assessed in the ZnSSe/ZnMgSSe tensile-strained multiple quantum wells (MQWs) which were grown on GaAs (0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Optically pumped lasing was performed at 23 K in the transverse magnetic (TM) mode with the threshold excitation intensity of 80 kW/cm2, indicating that optical gain is contributed from the recombination process of light-hole excitons in the ZnSSe wells. Time-resolved photoluminescence (TRPL) spectroscopy revealed the dynamical behavior of localized excitons. © 1998 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/s0022-0248(98)80180-2

Scopus

Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth

Suda J, Tokutome R, Kawakami Y, Fujita S, Fujita S

JOURNAL OF CRYSTAL GROWTH Vol. 175 page： 593 - 597 1997.5

Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth

Suda J., Tokutome R., Kawakami Y., Fujita S., Fujita S.

Journal of Crystal Growth Vol. 175-176 ( PART 1 ) page： 593 - 597 1997.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Hydrogen sulfide (H2S) treatment of GaAs substrates was examined by means of in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscope (AFM) observations. Its effects on initial stage of molecular beam epitaxy (MBE) of ZnSe were also investigated. According to the H2S treatment conditions, an atomically flat surface with (4 × 3) reconstruction or a faceted surface with (2 × 6) reconstruction was obtained. Clear RHEED intensity oscillations over 40 cycles were observed just after starting the growth on the (4 × 3) surface, showing two-dimensional (2D) nucleation, i.e., layer-by-layer growth of ZnSe. Etch pit density (EPD) of the epilayer was about 2.5 × 106 cm-2, which was much lower than that obtained by the ever applied ammonium-sulfide ((NH4)2Sx) treatment.

DOI： 10.1016/S0022-0248(96)00997-9

Scopus

Surface reconstruction and morphology of hydrogen sulfide treated GaAs (001) substrate

Suda J, Kawakami Y, Fujita S, Fujita S

CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES Vol. 448 page： 15 - 20 1997

(2x6) surface reconstruction of GaAs (001) obtained by hydrogen sulfide irradiation

Suda J, Kawakami Y, Fujita S, Fujita S

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Vol. 35 ( 11B ) page： L1498 - L1500 1996.11

(2 × 6) surface reconstruction of GaAs (001) obtained by hydrogen sulfide irradiation

Suda J., Kawakami Y., Fujita S., Fujita S.

Japanese Journal of Applied Physics, Part 2: Letters Vol. 35 ( 11 SUPPL. B ) 1996.11

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 2: Letters

Sulfur treatment of GaAs (001) using hydrogen sulfide to obtain a (2 × 6) S-terminated surface is presented. When a GaAs substrate with no epitaxial buffer layer is annealed at up to 580°C in a high vacuum (< 1 × 10-9 Torr) a mixture of (3 × 6) and (4 × 6) Ga-terminated reconstructions is observed. After cooling of the substrate to 300°C and irradiating it with hydrogen sulfide, a clear (2 × 6) S-terminated surface reconstruction appears in a few minutes.

DOI： 10.1143/jjap.35.l1498

Scopus

Growth of p-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

Suda J, Tsuka M, Honda D, Funato M, Kawakami Y, Fujita S, Fujita S

JOURNAL OF ELECTRONIC MATERIALS Vol. 25 ( 2 ) page： 223 - 227 1996.2

The role of defects on radiative transitions in nitrogen doped ZnSe

Hauksson IS, Suda J, Tsuka M, Kawakami Y, Fujita S, Fujita S

JOURNAL OF CRYSTAL GROWTH Vol. 159 ( 1-4 ) page： 329 - 333 1996.2

Dynamics of dense excitonic systems in ZnSe-based single quantum wells

Yamada Y, Mishina T, Masumoto Y, Kawakami Y, Suda J, Fujita S, Fujita S, Taguchi T

JOURNAL OF CRYSTAL GROWTH Vol. 159 ( 1-4 ) page： 814 - 817 1996.2

Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

Suda J., Tsuka M., Honda D., Funato M., Kawakami Y., Fujita S., Fujita S.

Journal of Electronic Materials Vol. 25 ( 2 ) page： 223 - 227 1996.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Electronic Materials

This paper describes metalorganic molecular beam epitaxy (MOMBE) of p-type ZnSe using metal zinc, pre-cracked metalorganic dimethylselenide, and microwave-excited nitrogen plasma as sources. Optical, structural, and electrical properties of the p-type ZnSe layers have been investigated. At present, maximum net acceptor concentration Na-Nd is 3 × 1017 cm-3 without any post-growth annealing. This is the highest acceptor concentration ever reported for MOMBE-grown p-type ZnSe doped with nitrogen plasma, but photoluminescence and deep level transient spectroscopy suggest that acceptors are highly compensated and the reduction of compensating defects is a key to further increase the acceptor concentration.

DOI： 10.1007/BF02666248

Scopus

Dynamics of dense excitonic systems in ZnSe-based single quantum wells

Yamada Y., Mishina T., Masumoto Y., Kawakami Y., Suda J., Fujita S., Fujita S., Taguchi T.

Journal of Crystal Growth Vol. 159 ( 1-4 ) page： 814 - 817 1996.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Time-resolved nonlinear luminescence of excitons and bi-excitons in ZnSe-based single quantum wells has been studied by means of a sub-picosecond excitation correlation technique. The enhancement in luminescence efficiency of bi-excitons was clearly observed in a time-correlation trace of nonlinear bi-exciton luminescence. The origin of the enhancement was attributed to the higher-order nonlinearity with respect to the density of bi-excitons, and was explained by considering the stimulation of bi-exciton luminescence.

DOI： 10.1016/0022-0248(95)00700-8

Scopus

The role of defects on radiative transitions in nitrogen doped ZnSe

Hauksson I., Suda J., Tsuka M., Kawakami Y., Fujita S., Fujita S.

Journal of Crystal Growth Vol. 159 ( 1-4 ) page： 329 - 333 1996.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

The radiative emission in nitrogen doped ZnSe grown by molecular beam epitaxy (MBE) and metalorganic molecular beam epitaxy (MOMBE) has been studied by means of time-resolved spectroscopy at 18 K. The lifetime of the free exciton emission and the oscillator strength of the acceptor bound exciton transition decreases with increased nitrogen incorporation. ZnSe:N MOMBE grown samples show different or additional compensation mechanism compared with MBE grown ZnSe:N due to higher defect concentration. The characteristic lifetime of the donor-acceptor pair emission is found to increase with increased incorporation of nitrogen as longer radiative lifetime of more localized carriers is expected as the carriers are trapped in deeper potential wells.

DOI： 10.1016/0022-0248(95)00585-4

Scopus

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