Faculty Profiles - SUDA Jun

Papers - SUDA Jun

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Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy

Onojima N, Suda J, Matsunami H

JOURNAL OF CRYSTAL GROWTH Vol. 237 page： 1012 - 1016 2002.4

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB<inf>2</inf> (0 0 0 1) by molecular beam epitaxy

Suda J., Matsunami H.

Journal of Crystal Growth Vol. 237-239 ( 1-4 II ) page： 1114 - 1117 2002.4

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

Growth of group-III nitrides was carried out on zirconium diboride (ZrB2) (0 0 0 1) substrates for the first time. ZrB2 is a semi-metal compound and have a hexagonal crystal structure. The a-axis lattice constant of ZrB2 is 3.169Å, which is almost lattice-matched to GaN and AlN. GaN and AlN were grown on mirror-polished ZrB2 (0 0 0 1) substrate directly by molecular beam epitaxy using elemental Al and Ga, and radio frequency plasma-excited active nitrogen. Epitaxial growth was confirmed by in situ reflection high-energy electron diffraction observation and X-ray diffraction pole-figure measurement. The surface morphology of 1.4μm-thick GaN layer was rough. On the other hand, that of 0.9μm-thick AlN layer was specular. © 2002 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0022-0248(01)02065-6

Scopus

Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy

Onojima N., Suda J., Matsunami H.

Journal of Crystal Growth Vol. 237-239 ( 1-4 II ) page： 1012 - 1016 2002.4

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth

The lattice relaxation process of AlN growth on an atomically flat 6H-SiC (0 0 0 1)Si substrate was investigated by using high-resolution X-ray diffraction. The atomically flat 6H-SiC substrates were prepared by HCl gas etching at 1300°C. AlN layers were grown by molecular beam epitaxy using elemental Al and radio frequency plasma-excited active nitrogen. Owing to 1% in-plane lattice mismatch between AlN and 6H-SiC, lattice relaxation occurs at a certain thickness, which strongly affects the structural property of AlN layer. The layer thickness dependence of AlN c-axis lattice constant was examined. The structural property of these AlN layers is also discussed based on the linewidth of XRD ω-scan measurements. © 2002 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0022-0248(01)02118-2

Scopus

Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure

Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 41 ( 1AB ) page： L40 - L42 2002.1

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 2: Letters

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) of a SiC multiple-pn-junction structure are presented. The structure was grown by atmospheric-pressure chemical vapor deposition using silane, propane and hydrogen. Nitrogen and diborane were used for n- and p-type doping gases, respectively. The SCM and SSRM results are compared with those of secondary ion mass spectrometry (SIMS). The 0.2-μm-thick n-type layer and 0.3-μm-thick p-type layer with a doping level of 1.5 × 1017 cm-3 in the multiple pn-junction were clearly resolved by both SCM and SSRM as well as SIMS.

DOI： 10.1143/JJAP.41.L40

Web of Science

Scopus

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

Onojima N, Suda J, Matsunami H

APPLIED PHYSICS LETTERS Vol. 80 ( 1 ) page： 76 - 78 2002.1

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

Onojima N., Suda J., Matsunami H.

Applied Physics Letters Vol. 80 ( 1 ) page： 76 - 78 2002.1

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Applied Physics Letters

Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident (×)R30° surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics. © 2002 American Institute of Physics.

DOI： 10.1063/1.1428620

Scopus

Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition

Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS Vol. 389-3 page： 659 - 662 2002

Epitaxial growth of AlN on 6H-SiC (1120) by molecular-beam epitaxy and effect of low-temperature buffer layer

Onojima N., Suda J., Matsunami H.

Materials Research Society Symposium - Proceedings Vol. 743 page： 139 - 144 2002

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Materials Research Society Symposium - Proceedings

Aluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (112̄0) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (112̄0) had an exact epitaxial relationship, i.e., [112̄0]AlN∥[112̄0]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

DOI： 10.1557/proc-743-l3.21

Scopus

Lattice relaxation of AlN buffer on surface-treated SiC in molecular-beam epitaxy for growth of high-quality GaN

Suda J., Miura K., Honaga M., Onojima N., Nishi Y., Matsunami H.

Materials Research Society Symposium - Proceedings Vol. 743 page： 311 - 316 2002

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Materials Research Society Symposium - Proceedings

The effects of SiC surface treatment on the lattice relaxation of AlN buffer layers and the crystalline quality of GaN layers grown on the buffer layers were studied. AlN buffer layers and GaN main layers were grown by plasma-assisted molecular-beam epitaxy on on-axis 6H-SiC (0001)Si substrates. High-temperature HCl-gas etching resulted in an atomically flat SiC surface with (√3×√3)R30° surface reconstruction, while HCl-gas etching followed by HF chemical treatment resulted in an atomically flat surface with (1×1) structure. The AlN layer grown on the (1×1) surface showed slower lattice relaxation. GaN grown on the AlN buffer layer exhibited a (0002) X-ray rocking curve of 70 arcsec and 107 cm-2 of screw-type dislocation density, which was superior than that of GaN grown on (√3×√3)R30° surface.

DOI： 10.1557/proc-743-l4.6

Scopus

Heteroepitaxial growth of insulating AlN on 6H-SiC by MBE

Onojima N, Suda J, Matsunami H

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS Vol. 389-3 page： 1457 - 1460 2002

Heteroepitaxial growth of insulating AIN on 6H-SiC by MBE

Onojima N., Suda J., Matsunami H.

Materials Science Forum Vol. 389-393 page： 1457 - 1460 2002

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Materials Science Forum

Insulating AIN single crystals were grown on 6H-SiC substrates by molecular beam epitaxy (MBE). The insulating properties of AIN were investigated by a current-voltage (I-V) measurement of Al/AIN/6H-SiC metal-insulator-semiconductor (MIS) diode structures. 6H-SiC substrates pretreated by HCI gas etching had no surface polishing scratches and an atomically flat surface. The AIN layer grown on the atomically flat substrate was very smooth and exhibited excellent insulating properties. The resistivity of this layer was around 7×1013 Ωcm. Thinner AIN layers had superior insulating properties. From the result of X-ray diffraction (XRD) measurements, thinner AIN layers had superior structural quality. These results indicate strong correlations between insulating properties and structural quality of AIN layer.

DOI： 10.4028/www.scientific.net/MSF.389-393.1457

Scopus

Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition

Suda J., Nakamura S., Miura M., Kimoto T., Matsunami H.

Materials Science Forum Vol. 389-393 ( 1 ) page： 659 - 662 2002

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Materials Science Forum

Scanning capacitance microscopy (SCM) of a SiC multiple pn junction structure is presented. The structure was grown by cold-wall atmospheric-pressure chemical vapor deposition using silane, propane and hydrogen. Nitrogen and diborane were used for n- and p-type doping gases, respectively. From secondary ion mass spectrometry (SIMS), it was confirmed that a multiple pn junction consists of 0.2 μm-thick n-type layer and 0.3 μm-thick p-type layer with a doping level of 1.5×1017 cm-3 was successfully grown. The multiple pn junction structure was clearly resolved by SCM and scanning electron microscopy (SEM). © 2002 Trans Tech Publications.

DOI： 10.4028/www.scientific.net/msf.389-393.659

Scopus

Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride

Kinoshita H, Otani S, Kamiyama S, Amano H, Akasaki I, Suda J, Matsunami H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 40 ( 12A ) page： L1280 - L1282 2001.12

Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride

Kinoshita H., Otani S., Kamiyama S., Amano H., Akasaki I., Suda J., Matsunami H.

Japanese Journal of Applied Physics, Part 2: Letters Vol. 40 ( 12 A ) 2001.12

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 2: Letters

Zirconium diboride (ZrB2) has a hexagonal crystal structure with an in-plane lattice constant of 3.168 Å, very close to that of GaN (3.189 Å). It is a metalloid compound and a very good electrical conductor, with a resistivity of 4.6μΩ·cm. We propose ZrB2 (0001) as an electrically conductive lattice-matched substrate for GaN. Firstly, bulk crystal growth of ZrB2 using a radio frequency (rf)-heated floating zone (FZ) method is presented. Relatively large crystals (φ 10 mm × 60 mm) were obtained using this method. The thermal expansion coefficient and thermal conductivity of ZrB2 were evaluated using this crystal. Characterization of ZrB2 (0001) mirror-polished substrate was carried out by optical microscopic examination and X-ray diffraction. Finally, the results of heteroepitaxial growth are briefly mentioned.

DOI： 10.1143/jjap.40.l1280

Scopus

Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy

Suda J, Kurobe T, Nakamura S, Matsunami H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 39 ( 11A ) page： L1081 - L1083 2000.11

Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy

Suda J., Kurobe T., Nakamura S., Matsunami H.

Japanese journal of applied physics Vol. 39 ( 11 A ) 2000.11

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese journal of applied physics

Selective area growth (SAG) of cubic GaN (c-GaN) was performed by metalorganic molecular beam epitaxy (MOMBE). The substrates used in this study were vapor phase epitaxy (VPE)-grown 3C-SiC on Si (001) 4°-off substrates. As a mask, 70-nm-thick SiO2 was formed by thermal oxidation of 3C-SiC and patterned by photolithography or focused ion beam (FIB) etching. GaN was grown on these patterned 3C-SiC substrates without a low-temperature-grown (LT) buffer layer. At a high growth temperature (850 °C), growth of GaN did not occur even on a 3C-SiC surface. At a low temperature (800 °C), c-GaN was epitaxially grown on a 3C-SiC surface, while polycrystalline GaN (poly-GaN) was grown on the SiO2-masked region. Growth of poly-GaN on the mask was suppressed by optimizing the growth temperature and V/III supply ratio. The possibility of positioning control for c-GaN microcrystals is also presented.

DOI： 10.1143/jjap.39.l1081

Scopus

GaP/Si heterojunction with ohmic conduction fabricated by wafer fusion technique

Soeno A, Kajita D, Suda J, Matsunami H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 39 ( 9AB ) page： L905 - L907 2000.9

GaP/Si heterojunction with ohmic conduction fabricated by wafer fusion technique

Soeno A., Kajita D., Suda J., Matsunami H.

Japanese Journal of Applied Physics, Part 2: Letters Vol. 39 ( 9 A/B ) 2000.9

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics, Part 2: Letters

In this letter, we report the fabrication of a GaP/Si heterojunction with ohmic conduction by a wafer fusion technique. After a hydrophilic pretreatment, GaP and Si wafers were brought in contact and annealed at 500 °C in a flowing forming gas for 30 min. The electrical properties of n-GaP/n+-Si and p+-GaP/n+-Si junctions fabricated by this procedure were investigated. The n-GaP/n+-Si junction exhibited potential barriers for both directions, indicating Fermi-level pinning due to high-density interface states at the fused interface. For the p+-GaP/n+-Si junction, ohmic conduction (10-20 Ω·cm2) was observed. This may be due to carrier transport by a tunneling process. The wafer fusion technique of GaP/Si is applicable to optoelectronic integrated circuits (OEICs) and high-efficiency tandem-type solar cells.

DOI： 10.1143/jjap.39.l905

Scopus

Morphological diversity in the crystal growth of potassium and rubidium dichromates in gelatin gel

Suda J., Matsushita M., Izumi K.

Journal of the Physical Society of Japan Vol. 69 ( 1 ) page： 124 - 129 2000.1

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Journal of the Physical Society of Japan

We have found that the crystals of rubidium dichromate (Rb2Cr2O7) grown in gelatin gel have a rich variety of morphologies such as platelike, spherulitic and diffusion-limited aggregation (DLA)-like shapes. The morphological diagram has been determined in the range of solute and gelatin concentrations from 1.0 to 4.0%, 0.1 to 7.0%, respectively. The diagram corresponds to that of potassium dichromate (K2Cr2O7) which is similar to Rb2Cr2O7 in the crystal structure and physico-chemical properties. However, featherlike crystals have grown in the region of the diagram where the unique helical K2Cr2O7 crystals grow. We discuss the morphological changes of two kinds of dichromate crystals grown in gelatin gel.

DOI： 10.1143/JPSJ.69.124

Scopus

Morphological diversity in the crystal growth of potassium. and rubidium dichromates in gelatin gel

Suda J, Matsushita M, Izumi K

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 69 ( 1 ) page： 124 - 129 2000.1

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