Papers - SUDA Jun
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Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy
Onojima N, Suda J, Matsunami H
JOURNAL OF CRYSTAL GROWTH Vol. 237 page: 1012 - 1016 2002.4
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Suda J., Matsunami H.
Journal of Crystal Growth Vol. 237-239 ( 1-4 II ) page: 1114 - 1117 2002.4
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Onojima N., Suda J., Matsunami H.
Journal of Crystal Growth Vol. 237-239 ( 1-4 II ) page: 1012 - 1016 2002.4
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Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure
Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 41 ( 1AB ) page: L40 - L42 2002.1
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Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
Onojima N, Suda J, Matsunami H
APPLIED PHYSICS LETTERS Vol. 80 ( 1 ) page: 76 - 78 2002.1
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Onojima N., Suda J., Matsunami H.
Applied Physics Letters Vol. 80 ( 1 ) page: 76 - 78 2002.1
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Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition
Suda J, Nakamura S, Miura M, Kimoto T, Matsunami H
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS Vol. 389-3 page: 659 - 662 2002
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Onojima N., Suda J., Matsunami H.
Materials Research Society Symposium - Proceedings Vol. 743 page: 139 - 144 2002
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Suda J., Miura K., Honaga M., Onojima N., Nishi Y., Matsunami H.
Materials Research Society Symposium - Proceedings Vol. 743 page: 311 - 316 2002
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Heteroepitaxial growth of insulating AlN on 6H-SiC by MBE
Onojima N, Suda J, Matsunami H
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS Vol. 389-3 page: 1457 - 1460 2002
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Heteroepitaxial growth of insulating AIN on 6H-SiC by MBE
Onojima N., Suda J., Matsunami H.
Materials Science Forum Vol. 389-393 page: 1457 - 1460 2002
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Suda J., Nakamura S., Miura M., Kimoto T., Matsunami H.
Materials Science Forum Vol. 389-393 ( 1 ) page: 659 - 662 2002
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Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride
Kinoshita H, Otani S, Kamiyama S, Amano H, Akasaki I, Suda J, Matsunami H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 40 ( 12A ) page: L1280 - L1282 2001.12
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Kinoshita H., Otani S., Kamiyama S., Amano H., Akasaki I., Suda J., Matsunami H.
Japanese Journal of Applied Physics, Part 2: Letters Vol. 40 ( 12 A ) 2001.12
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Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy
Suda J, Kurobe T, Nakamura S, Matsunami H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 39 ( 11A ) page: L1081 - L1083 2000.11
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Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy
Suda J., Kurobe T., Nakamura S., Matsunami H.
Japanese journal of applied physics Vol. 39 ( 11 A ) 2000.11
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GaP/Si heterojunction with ohmic conduction fabricated by wafer fusion technique
Soeno A, Kajita D, Suda J, Matsunami H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS Vol. 39 ( 9AB ) page: L905 - L907 2000.9
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GaP/Si heterojunction with ohmic conduction fabricated by wafer fusion technique
Soeno A., Kajita D., Suda J., Matsunami H.
Japanese Journal of Applied Physics, Part 2: Letters Vol. 39 ( 9 A/B ) 2000.9
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Morphological diversity in the crystal growth of potassium and rubidium dichromates in gelatin gel
Suda J., Matsushita M., Izumi K.
Journal of the Physical Society of Japan Vol. 69 ( 1 ) page: 124 - 129 2000.1
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Morphological diversity in the crystal growth of potassium. and rubidium dichromates in gelatin gel
Suda J, Matsushita M, Izumi K
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 69 ( 1 ) page: 124 - 129 2000.1