Papers - SUDA Jun
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Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors
Suda J., Nakano Y., Shimada S., Amari K., Kimoto T.
Materials Science Forum Vol. 527-529 ( PART 2 ) page: 1545 - 1548 2006
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Low-dislocation-density nonpolar AlN grown on 4H-SiC (11-20) substrates
Suda J., Horita M., Kimoto T.
Materials Research Society Symposium Proceedings Vol. 955 page: 61 - 62 2006
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Kimoto T., Kawano H., Noborio M., Suda J., Matsunami H.
Materials Science Forum Vol. 527-529 ( PART 2 ) page: 987 - 990 2006
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Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs
Noborio M., Negoro Y., Suda J., Kimoto T.
Materials Science Forum Vol. 527-529 ( PART 2 ) page: 1305 - 1308 2006
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1200 V-Class 4H-SiC RESURF MOSFETs with low on-resistances
Kimoto T., Kawano H., Suda J.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs page: 279 - 282 2005.11
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Onojima N., Kaido J., Suda J., Kimoto T.
Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page: 2643 - 2646 2005.11
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Armitage R., Suda J., Kimoto T.
Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page: 2191 - 2194 2005.11
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Nakano Y., Suda J., Kimoto T.
Physica Status Solidi C: Conferences Vol. 2 ( 7 ) page: 2208 - 2211 2005.11
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Armitage R, Nishizono K, Suda J, Kimoto T
JOURNAL OF CRYSTAL GROWTH Vol. 284 ( 3-4 ) page: 369 - 378 2005.11
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1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET
Kimoto T, Kawano H, Suda J
IEEE ELECTRON DEVICE LETTERS Vol. 26 ( 9 ) page: 649 - 651 2005.9
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Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
Noborio M, Kanzaki Y, Suda J, Kimoto T
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 52 ( 9 ) page: 1954 - 1962 2005.9
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Influence of substrate misorientation angle and direction in growth of GaN on off-axis SiC (0001)
Suda J., Nakano Y., Kimoto T.
Materials Research Society Symposium Proceedings Vol. 831 page: 471 - 476 2005.8
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Armitage R., Nishizono K., Suda J., Kimoto T.
Materials Research Society Symposium Proceedings Vol. 831 page: 477 - 482 2005.8
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Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
Kimoto T, Kosugi H, Suda J, Kanzaki Y, Matsunami H
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 52 ( 1 ) page: 112 - 117 2005.1
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1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances
Kimoto T, Kawano H, Suda J
PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS page: 279 - 282 2005
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Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers
Armitage R, Nishizono K, Suda J, Kimoto T
GaN, AIN, InN and Their Alloys Vol. 831 page: 477 - 482 2005
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Short-Channel Effects in 4H-SiC MOSFETs
Noborio M, Kanzaki Y, Suda J, Kimoto T, Matsunami H
SILICON CARBIDE AND RELATED MATERIALS 2004 Vol. 483 page: 821 - 824 2005
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Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication
Kawano H, Kimoto T, Suda J, Matsunami H
SILICON CARBIDE AND RELATED MATERIALS 2004 Vol. 483 page: 809 - 812 2005
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Dose designing for high-voltage 4H-SiC RESURF MOSFETs - Device simulation and fabrication
Kawano H., Kimoto T., Suda J., Matsunami H.
Materials Science Forum Vol. 483-485 page: 809 - 812 2005
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Short-channel effects in 4H-SiC MOSFETs
Noborio M., Kanzaki Y., Suda J., Kimoto T., Matsunami H.
Materials Science Forum Vol. 483-485 page: 821 - 824 2005