Presentations -
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Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate International conference
Maki Kushimoto, Yoshio Honda, and Hiroshi Amano
The 3th International Conference on Light-Emitting Devices and Their Industrial Applications
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Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001) International conference
T.Mitsunari, T. Yamamoto, M. Kato, A. Tamura, S. Usami, M. Kushimoto, K. Yamashita, Y. Honda, Y. Lacroix, and H. Amano
10th International Symposium on Semiconductor Light Emitting Devices
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Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate International conference
Maki Kushimoto, Yoshio Honda, Hiroshi Amano
International Workshop on Nitride Semiconductors 2014(IWN2014)
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Growth of (1-101)InGaN stripes on patterned (001)Si substrate International conference
Yasukazu Sone, Maki Kushimoto, Yoshio Honda, Hiroshi Amano
The 15th IUMRS-International Congerence in Asia
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Growth optimization of green InGaN multi-quantum well International conference
"T.Mitsunari1, A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacroix3, and H. Amano1,2
Conference on LED and Its Industrial Application '14
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Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate International conference
M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
10th International Conference on Nitride Semiconductors(ICNS-10)
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Optical properties of semipolar (1-101) InGaN/GaN multiple quantum well with cavity structure on patterned Si substrae International conference
M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures(EDISON18)
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Optical polarization properties in semipolar (1-101) InGaN/GaN multiple quantum well on a patterned Si Substrate International conference
M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
International Workshop on Nitride Semiconductors 2012(IWN2012)
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Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN International conference
T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano
International Workshop on Nitride Semiconductors 2012(IWN2012)
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Reduction of dislocations and residual stress in GaN grown on patterned Si substrate International conference
T. Tanikawa, T. Mitsunari, M. Kushimoto, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
11th Akasaki Research Center Symposium
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AlN基板上UV-C LDのプロセス起因劣化 Invited
笹岡千秋、久志本真希、張梓懿、天野浩
日本学術振興会「結晶加工と評価技術」第145 委員会 第172 回研究会 2021.10.1
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世界最短波長深紫外半導体レーザー Invited
久志本 真希
TRiSTAR第１期奥村フェロー主催研究セミナー 2023.5.12
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第3回 光材料・応用技術研究会 Invited
久志本 真希
第3回 光材料・応用技術研究会 2023.11.10