Presentations -
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Interface state density and dielectric breakdown electric fields of MOS capacitors using several off-cut m-plane GaN substrates
M. Deki, K. Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
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Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by molecular beam epitaxy
T. Hattori, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
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"Correlation between dislocation and leakage current of p-n diodes on free-standing GaN substrate
S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Hond and H. Amano
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m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off- angled m-plane GaN substrate
A.Tanaka, Y. Ando, O. Barry, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano
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異なるGaN ⾃⽴基板上縦型PN ダイオードのキラー転位解析
宇佐美 茂佳、福島 颯太、安藤 悠⼈、⽥中 敦之、永松 謙太郎、久志本 真希、出来 真⽃、新⽥ 州吾、本⽥ 善央、天野 浩
⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム
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GaN パワーデバイスの周辺耐圧構造の検討
福島 颯太、安藤 悠⼈、宇佐美 茂佳、⽥中 敦之、永松 謙太郎、出来 真⽃、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩
⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム
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オフ⽅向の異なるホモエピタキシャルm ⾯ショットキーバリアダイオードの作製
安藤 悠⼈、永松 謙太郎、⽥中 敦之、宇佐美 茂佳、出来 真⽃、Barry Ousmane、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩
⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム
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Semipolar InGaN optical devices on patterned Si substrates Invited International conference
Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda and Hiroshi Amano
The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
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Evaluation of internal quantum efficiency of LED by photocurrent measurement Invited International conference
Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano
The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
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Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society International conference
"S. Usami, Z. Ye, X. Yang, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Amano
International Conference on Materials and Systems for Sustainability (ICMaSS2017)
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Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference
M. Deki, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano
International Conference on Materials and Systems for Sustainability (ICMaSS2017)
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Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes International conference
"M. Deki, Y. Ando, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano
10th International Workshop on Bulk Nitride Semiconductors
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転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析
宇佐美 茂佳、福島 颯太、安藤 悠人、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩
第78回応用物理学会 秋季学術講演会
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The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy
Zhibin Liu、Shugo Nitta、Shigeyoshi Usami、Kentaro Nagamatsu、Maki Kushimoto、Manato Deki、Yoshio Honda、Hiroshi Amano
第78回応用物理学会 秋季学術講演会
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オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD
安藤 悠人、永松 謙太郎、田中 敦之、宇佐美 茂佳、バリー ウスマン1、出来 真斗、久志本 真希、新田 州吾、本田 善央、天野 浩
第78回応用物理学会 秋季学術講演会
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Development of Sustainable Smart Society via Transformative Electronics International conference
H. Amano, Y. Robin, S. Y. Bae, K. Nagamatsu, M. Kushimoto, M. Deki, T. Nishitani, D. Sato, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek
The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
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Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference
Manato Deki, Kazushi Sone, Junya Matsushita, Kentarou Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
ICNS-12
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Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate International conference
Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano
ICNS-12
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Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching International conference
Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano
ICNS-12
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m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate International conference
Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
ICNS-12