Presentations -

Impact of growth conditions on IQE of Far-UVC LEDs International conference

Shashwat Rathkanthiwar, Maki Kushimoto, Hiroshi Amano, Yudai Shimizu, Kazutada Ikenaga, Mayank Bulsara, Keitaro Ikejiri, Leo J Schowalter

12th International Workshop on Nitride Semiconductors (IWN2024)  2024.11.5 

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Event date： 2024.11

Language：English   Presentation type：Oral presentation (general)  

Venue：Honolulu, Hawaii, USA  

High-Al-content AlGaN p-n Diodes Enabled by Distributed Polarization Doping Invited International conference

Takeru Kumabe, Akira Yoshikawa, Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, and Hiroshi Amano

12th International Workshop on Nitride Semiconductors (IWN2024)  2024.11.4 

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Event date： 2024.11

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Honolulu, Hawaii, USA  

Deep Ultraviolet Semiconductor Laser with Polarisation Control Technology Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

12th International Workshop on Nitride Semiconductors (IWN2024)  2024.11.5 

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Event date： 2024.11

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Honolulu, Hawaii, USA  

MoOx thin film deposition by RF magnetron sputtering for anode contact structure in UV-C LED

2024.10.3 

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Event date： 2024.10

Language：Japanese   Presentation type：Poster presentation  

Advances in Deep Ultraviolet Semiconductor Lasers Invited

2024.10.3 

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Event date： 2024.10

Language：Japanese   Presentation type：Oral presentation (invited, special)  

深紫外半導体レーザの作製技術 Invited

久志本 真希

第24回情報フォトニクス研究グループ　秋合宿  2024.9.25 

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Event date： 2024.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：昭和ふるさと村（栃木県芳賀郡茂木町）  

エミッション顕微鏡を用いたUV-C LEDにおける中長期劣化の観察

本田 善央, 古澤 優太, 田中 敦之, 塚本 涼子, 宮崎 敦嗣, 坊山 晋也, 奥野 浩司, 斎藤 義樹, 嶋 紘平, 秩父 重英, 石黒 永孝, 竹内 哲也, 久志本 真希, 天野 浩

第85回 応用物理学会 秋季学術講演会  2024.9.16 

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Event date： 2024.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：朱鷺メッセ　新潟コンベンションセンター 他2会場/オンライン  

分布型分極ドーピングによるAlN系縦型p-nダイオードの作製 Invited

隈部 岳瑠, 吉川 陽, 川崎 晟也, 久志本 真希, 本田 善央, 新井 学, 須田 淳, 天野 浩

第85回 応用物理学会 秋季学術講演会  2024.9.16 

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Event date： 2024.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：朱鷺メッセ　新潟コンベンションセンター 他2会場/オンライン  

分布型分極ドーピングを用いたAlGaN系縦型p-nダイオードの特性評価 Invited

本田 善央, 隈部 岳瑠, 久志本 真希, 天野 浩

第85回 応用物理学会 秋季学術講演会  2024.9.17 

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Event date： 2024.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：朱鷺メッセ　新潟コンベンションセンター 他2会場/オンライン  

Demonstration of AlGaN-on-AlN p-n Diodes with Dopant-free Distributed Polarization Doping Invited International conference

Takeru Kumabe, Akira Yoshikawa, Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, and Hiroshi Amano

E-MRS 2024 Fall Meeting  2024.9.19 

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Event date： 2024.9

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Warsaw, Poland  

分布型分極ドーピングによるAlN系縦型p-nダイオードの実証 Invited

隈部 岳瑠, 吉川 陽, 川崎 晟也, 久志本 真希, 本田 善央, 新井 学, 須田 淳, 天野 浩

電気学会 C部門 電子デバイス研究会  2024.7.5 

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Event date： 2024.7

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：サニー南神田ビル サニー会議室/オンライン  

単結晶AlN基板上擬似格子整合AlGaN UV-Cレーザーダイオード Invited

久志本 真希

応用物理学会 応用電子物性分科会/結晶工学分科会 合同研究会「窒化物半導体光デバイスの最前線」  2024.7.2 

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Event date： 2024.7

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：京都テルサ/オンライン  

分布型分極ドーピングによるAlN系縦型p-nダイオードの実証 Invited

隈部 岳瑠, 吉川 陽, 川崎 晟也, 久志本 真希, 本田 善央, 新井 学, 須田 淳, 天野 浩

電子情報通信学会 シリコン材料・デバイス研究会（SDM）  2024.6.21 

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Event date： 2024.6

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：関西学院大学 大阪梅田キャンパス  

室温連続波発振AlGaN系深紫外半導体レーザー Invited

久志本 真希

第395回蛍光体同学会講演会  2024.6.7 

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Event date： 2024.6

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：慶應義塾大学理工学部 矢上キャンパス  

AlN基板上に作製したUV-C CWレーザーダイオード Invited

笹岡 千秋, 張 梓懿, 吉川 陽, 久志本 真希, 本田 善央, 天野 浩

電子情報通信学会 レーザ・量子エレクトロニクス研究会（LQE) 30周年記念特別研究会  2024.5.28 

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Event date： 2024.5

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：沖縄県青年会館  

Advancements in AlGaN-Based Laser Diodes on AlN Substrates Invited International conference

M. Kushimoto, Z. Zhang, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI) 

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Event date： 2024.5

Language：English   Presentation type：Oral presentation (invited, special)  

The In Incorporation Corresponding to TMA Flow in MOVPE Growth of AlGaInN International conference

Yuto Yamada, Takeru Kumabe, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda and Hiroshi Amano

21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI)  2024.5.16 

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Event date： 2024.5

Language：English   Presentation type：Poster presentation  

Venue：Las Vegas, USA  

Advancements in AlGaN-Based Laser Diodes on AlN Substrates Invited International conference

M. Kushimoto, Z. Zhang, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI)  2024.5.14 

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Event date： 2024.5

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Las Vegas, USA  

Technology development for long life and high efficiency DUV LEDs Invited International conference

Yoshiki Saito, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Masaki Oya, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Yoshio Honda, Hiroshi Amano, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F Chichibu

LEDIA2024  2024.4.24 

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Event date： 2024.4

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Yokohama, Japan  

Heterojunction contact layer UV LED with MgZnO:Ga as p-side contact layer International conference

M. Kushimoto, T. Tanaka, Y. Honda, and H. Amano

LEDIA2024  2024.4.24 

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Event date： 2024.4

Language：English   Presentation type：Oral presentation (general)  

Venue：Yokohama, Japan  

Separation of AlGaN-based LED structures from AlN/sapphire template by photoelectrochemical etching International conference

Yoshio Honda, Yuta Furusawa, Ryoko Tsukammoto, Yoshiki Saito, Koji Okuno, Shinya Boyama, Atsushi Miyazaki, Maki Kushimoto, Hiroshi Amano

LEDIA2024  2024.4.24 

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Event date： 2024.4

Language：English   Presentation type：Poster presentation  

Venue：Yokohama, Japan  

Heterojunction contact layer UV LED with MgZnO:Ga as p-side contact layer International conference

M. Kushimoto, T. Tanaka, Y. Honda, and H. Amano

LEDIA2024 

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Event date： 2024.4

Language：English   Presentation type：Oral presentation (general)  

深紫外 AlGaN 系発光デバイスの技術進展: UVC-LD，深紫外 LED コンタクト層開発 Invited

久志本 真希 , 本田 善央 , 天野 浩

第71回応用物理学会春季学術講演会  2024.3.24 

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Event date： 2024.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：東京都市大学 世田谷キャンパス/オンライン  

分布型分極ドーピングによるAlN系縦型p-nダイオードの実証

隈部 岳瑠, 吉川 陽, 川崎 晟也, 久志本 真希, 本田 善央, 新井 学, 須田 淳, 天野 浩

第71回応用物理学会春季学術講演会  2024.3.23 

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Event date： 2024.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東京都市大学 世田谷キャンパス/オンライン  

[第45回優秀論文賞受賞記念講演] 単結晶AlN基板を用いた深紫外波長域レーザーダイオード Invited

張 梓懿

第71回応用物理学会春季学術講演会  2024.3.23 

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Event date： 2024.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：東京都市大学 世田谷キャンパス/オンライン  

Development for long lifetime and high efficiency DUV LEDs Invited International conference

Yoshiki Saito, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Masaki Oya, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Yoshio Honda, Hiroshi Amano, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F Chichibu

SPIE Photonics West 2025  2024.1.30 

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Event date： 2024.1

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：San Francisco, California, USA  

Power degradation mechanism of UV-C LEDs under current stress Invited International conference

Yoshio Honda, Shigefusa F. Chichibu, Kohei K. Shima, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Yoshiki Saito, Atsushi Tanaka, Tetsuya Takeuchi, Maki Kushimoto, Hiroshi Amano

SPIE Photonics West 2025  2024.1.30 

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Event date： 2024.1

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：San Francisco, California, USA  

Recent progress in the development of AlGaN-based deep-ultraviolet laser diodes Invited International conference

Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Chiaki Sasaoka, Hiroshi Amano, Koji Aoto,

SPIE Photonics West 2025  2024.1.28 

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Event date： 2024.1

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：San Francisco, California, USA  

Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping International conference

T. Kumabe, A. Yoshikawa, M. Kushimoto, Y. Honda, M. Arai, J. Suda, and H. Amano

69th Annual IEEE International Electron Devices Meeting (IEDM)  2023.12.12 

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Event date： 2023.12

Language：English   Presentation type：Oral presentation (general)  

Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J Schowalter, Chiaki Sasaoka, Hiroshi Amano

30th International Display Workshops (IDW '23)  2023.12.7 

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Event date： 2023.12

Language：English   Presentation type：Oral presentation (invited, special)  

深紫外線レーザーダイオードにおける室温連続発振の実現 Invited

張 梓懿, 久志本 真希, 吉川 陽, 笹岡 千秋, 天野 浩

第52回結晶成長国内会議（JCCG-52）  2023.12.5 

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Event date： 2023.12

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：ウインクあいち  

Study on degradation of deep ultraviolet laser diode International conference

Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.16 

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Event date： 2023.11

Language：English   Presentation type：Poster presentation  

Demonstration of continuous wave lasing of deep UV Laser diodes on Single-crystal AlN substrate International conference

Yoshio Honda, Yuta Furusawa, Ryoko Tsukamoto, Yoshiki Saito, Koji Okuno, Kengo Nagata, Shinya Boyama, Atsushi Miyazaki, Maki Kushimoto, and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.13 

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Event date： 2023.11

Language：English   Presentation type：Poster presentation  

Demonstration of UV-C LEDs utilizing p-GaN/MgZnO:Ga hetero-tunnel junction International conference

Tatsuhiro Tanaka, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.17 

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Event date： 2023.11

Language：English   Presentation type：Oral presentation (general)  

Recent Progress of Deep Ultraviolet Laser Diodes on AlN substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J Schowalter, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.14 

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Event date： 2023.11

Language：English   Presentation type：Oral presentation (invited, special)  

Recent developments in high efficiency for deep UV LEDs Invited International conference

Yoshiki Saito, Kengo Nagata, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Masaki Oya, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Yoshio Honda, Hiroshi Amano, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F Chichibu

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.17 

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Event date： 2023.11

Language：English   Presentation type：Oral presentation (invited, special)  

Realization of AlN electron blocking layer with abrupt interface and its subsequent improvement in UV-C light-emitting device characteristics International conference

Akira Yoshikawa, Ziyi Zhang, Maki Kushimoto, Koji Aoto, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.13 

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Event date： 2023.11

Language：English   Presentation type：Poster presentation  

Demonstration of continuous wave lasing of deep UV Laser diodes on Single-crystal AlN substrate Invited International conference

Z. Zhang, M.Kushimoto, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2023)  2023.6.8 

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Event date： 2023.6

Language：English   Presentation type：Oral presentation (invited, special)  

CW operation of UV-C laser diodes Invited International conference

Maki Kushimoto

The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD Ⅵ)  2023.6.6 

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Event date： 2023.6

Language：English   Presentation type：Oral presentation (keynote)  

単結晶AlN基板上AlGaNを用いた270nm帯CW半導体レーザー Invited

久志本 真希

光電相互変換第125委員会 5月26日研究会  2023.5.26 

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Event date： 2023.5

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン  

Breakthrough technologies to realize room-temperature continuous-wave deep-ultraviolet laser diodes Invited International conference

Maki Kushimoto

SKM DPG conference  2023.3.29 

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Event date： 2023.3

Language：English   Presentation type：Oral presentation (invited, special)  

[第1回ダイバーシティ＆インクルージョン賞 女性研究者研究奨励賞 受賞記念講演] 未踏波長帯域深紫外レーザーダイオード Invited

久志本真希

第70回　応用物理学会　春季学術講演会  2023.3.16 

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Event date： 2023.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：上智大学四谷キャンパス/オンライン  

Current-injected continuous-wave AlGaN-based UVC laser diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, Hiroshi Amano

SPIE Photonics West　2023  2023.2.1 

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Event date： 2023.1 - 2023.2

Language：English   Presentation type：Oral presentation (invited, special)  

AlN基板を用いた深紫外半導体レーザー Invited

久志本真希

2022年度　結晶・評価WG研究会(第２回) /第45回CIRFEセミナー  2022.12.20 

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Event date： 2022.12

Language：Japanese   Presentation type：Public lecture, seminar, tutorial, course, or other speech  

Venue：名古屋大学　研究共同館Ⅱ ２Fホール　/オンライン  

Realization of continuous-wave lasing of AlGaN-based UVC laser diode Invited International conference

Ziyi Zhang，Maki Kushimoto

The 10th Asia-Pacific Workshop on Widegap Semiconductors(APWS2022）  2022.11.17 

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Event date： 2022.11

Language：English   Presentation type：Oral presentation (invited, special)  

Sputtered polycrystalline MgZnO/Al reflective electrodes for AlGaN-based homojunction tunnel junction deep-ultraviolet LEDs International conference

Tatsuhiro Tanaka, Taichi Matsubara, Kengo Nagata, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

4th International Workshop on Gallium Oxide and Related Materials (IWGO2022)  2022.10.24 

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Event date： 2022.10

Language：English   Presentation type：Poster presentation  

Shortest wavelength AlGaN based semiconductor lasers Invited International conference

Maki Kushimoto

40th SPP Physics Conference  2022.10.20 

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Event date： 2022.10

Language：English   Presentation type：Oral presentation (invited, special)  

Fabrication of GaN/AlN Resonant tunneling diodes by MOVPE International conference

D. Iwata, T. Kumabe, H. Watanabe, M. Kushimoto, M. Deki, S. Nitta, A. Tanaka, Y. Honda, H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

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Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Continuous-wave lasing of AlGaN-based UVC laser diode by current injection International conference

Z. Zhang, M. Kushimoto, A. Yoshikawa, K. Aoto, L. J. Schowalter, C. Sasaoka, and H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

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Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Analysis of the cause of threshold rise of UV-C LD on AlN substrate International conference

M.Kushimoto, Z. Zhang, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

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Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

深紫外レーザーダイオードの連続波発振 Invited

久志本 真希, 張 梓懿, 吉川 陽, 青戸 孝至, 本田 善央, ショーワルター レオ, 笹岡 千秋, 天野 浩

第83回　応用物理学会　秋季学術講演会  2022.9.22 

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Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：東北大学 川ノ内キャンパス（オンライン）  

異なるキャリア濃度を有するn型GaNに対する多光子励起 PECエッチングの調査

丹羽 ののか，川崎 晟也, 隈部 岳瑠, 渡邉 浩崇, 古澤 優太, 田中 敦之, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

第83回　応用物理学会　秋季学術講演会  2022.9.23 

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Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学 川ノ内キャンパス（オンライン）  

Toward AlGaN-based deep-ultraviolet LDs - Demonstration of the shortest wavelength LD and realization of CW operation Invited International conference

Maki Kushimoto

The 20th International Conference on Metal Organic Vapor Phase Epitaxy(ICMOVPE XX)  2022.7.14 

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Event date： 2022.7

Language：English   Presentation type：Oral presentation (invited, special)  

Approaches to low threshold current density in deep UV laser diodes on AlN substrate Invited International conference

M. Kushimoto, Z. Zhang, L. J. Schowalter, Y. Honda, C. Sasaoka, and H. Amano

Compound Semiconductor Week 2022(CSW2022)  2022.6.1 

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Event date： 2022.6

Language：English   Presentation type：Oral presentation (invited, special)  

High-efficiency AlGaN homojunction tunnel-junction deep-UV LEDs Invited International conference

Kengo Nagata, Taichi Matsubara, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Kazuo Yamamoto, Tsukasa Hirasama, and Hiroshi Amano

5th International Workshop on UV Materials and Devices(IWUMD 2022)  2022.5.26 

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Event date： 2022.5

Language：English   Presentation type：Oral presentation (invited, special)  

Reduction of Threshold Current Density in UV-C LDs Fabricated on AlN Substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

2022 MRS Spring Meeting  2022.5.23 

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Event date： 2022.5

Language：English   Presentation type：Oral presentation (invited, special)  

Development of reflective electrodes for deep-ultraviolet LEDs using polycrystalline MgZnO structural films International conference

Maki Kushimoto, Taichi Matsubara, Kengo Nagata, Tatsuhiro Tanaka, Yoshio Honda, and Hiroshi Amano

9th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022)  2022.4.22 

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Event date： 2022.4

Language：English   Presentation type：Oral presentation (general)  

Potential distribution analysis of AlGaN homojunction tunnel-junction by electron holography International conference

Kengo Nagata, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Kazuo Yamamoto, Tsukasa Hirayama, and Hiroshi Amano

9th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022)  2022.4.22 

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Event date： 2022.4

Language：English   Presentation type：Oral presentation (general)  

Development of high efficiency AlGaN tunnel junction deep-UV LEDs Invited International conference

Kengo Nagata, Taichi Matsubara, Maki Kushimoto, Yoshiki Saito, Yoshio Honda, Tetsuya Takeuchi, and Hiroshi Amano

13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 14th International Conference on Plasma-Nano Technology & Sciense(ISPlasma2022 / IC-PLANTS2022)  2022.3.10 

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Event date： 2022.3

Language：English   Presentation type：Oral presentation (invited, special)  

MOVPE法を用いたGaN/AlN共鳴トンネルダイオードの作製

岩田大暉, 隈部岳瑠, 渡邉 浩崇, 久志本真希, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

第69回応用物理学会春季学術講演会  2022.2.22 

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Event date： 2022.2

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学/オンライン  

多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案

八木誠，川崎晟也，隈部岳瑠，安藤悠人，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第69回応用物理学会春季学術講演会  2022.2.23 

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Event date： 2022.2

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学/オンライン  

Emission uniformity of UVC laser diodes on AlN substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

SPIE Photonics West 2022   2022.2.21 

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Event date： 2022.1

Language：English   Presentation type：Oral presentation (invited, special)  

AlN基板上UV-C レーザーダイオード

久志本 真希、張 梓懿、本田 善央、レオ ショーワルター、笹岡 千秋、天野 浩

一般社団法人レーザー学会学術講演会第42回年次大会  2022.1.14 

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Event date： 2022.1

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催  

UV-C LDs fabricated on AlN Substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity  2022.1.12 

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Event date： 2022.1

Language：English   Presentation type：Oral presentation (invited, special)  

最短波長UVC-LD の実現とその周辺技術 Invited

久志本 真希，張 梓懿，本田 善央，レオ ショーワルター，笹岡 千秋，天野 浩

一般社団法人ワイドギャップ半導体学会第4回研究会  2021.12.10 

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Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン開催  

Sputtered polycrystalline MgZnO as transparent electrode in AlGaN-based homojunction tunnel junction deep-ultraviolet light-emitting diode for significant emission enhancement International conference

Taichi Matsubara, Kengo Nagata, Maki Kushimoto1, Yoshio Honda, and Hiroshi Amano

International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

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Event date： 2021.11

Language：English   Presentation type：Oral presentation (general)  

Reduction of operating voltage of AlGaN homo junction tunnel junction deep UV light emitting diode by controlling impurity concentrations International conference

Kengo Nagata, Hiroaki Makino, Hiroshi Miwa, Shinichi Matsui, Shinya Boyama, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano

International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

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Event date： 2021.11

Language：English   Presentation type：Oral presentation (general)  

Reducing the Threshold Current Density of Deep UV LDs on AlN Substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

The IEEE Photonics Conference (IPC 2021)  2021.10.20 

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Event date： 2021.10

Language：English   Presentation type：Oral presentation (invited, special)  

電子線ホログラフィーを用いたAlGaNホモ接合トンネルジャンクションの電位分布解析

永田 賢吾, 穴田 智史, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩, 山本 和生, 平山 司

第82回応用物理学会秋季学術講演会  2021.9.12 

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Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催  

AlGaNホモ接合 トンネルジャンクション深紫外 LED の低電圧駆動 （2）

永田 賢吾, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

第82回応用物理学会秋季学術講演会  2021.9.12 

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Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催  

深紫外LEDの発光出力向上に向けた多結晶スパッタリングMgZnO透明電極

松原 太一, 永田 賢吾, 久志本 真希, 本田 善央, 天野 浩

第82回応用物理学会秋季学術講演会  2021.9.12 

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Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催  

Development of UV-C laser diode on AlN substrate using distributed polarization doped p-side cladding layer Invited International conference

Chiaki Sasaoka, Ziyi Zhang, Maki Kushimoto, Leo J. Schowalter, and Hiroshi Amano

Lester Eastman Conference on High Performance Devices ( LEC 2021)  2021.8.4 

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Event date： 2021.8

Language：English   Presentation type：Oral presentation (invited, special)  

Deep UV Laser Diode with Compositionally Graded AlGaN p-cladding Layer Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

CLEO 2021  2021.5.12 

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Event date： 2021.5

Language：English   Presentation type：Oral presentation (invited, special)  

UV-C laser diode with distributed polarization doped p-cladding layer Invited International coauthorship International conference

M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

2021 MRS Spring Meeting  2021.4.18 

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Event date： 2021.4

Language：English   Presentation type：Oral presentation (invited, special)  

Development of polarization doped UVC LDs on AlN substrates Invited International coauthorship International conference

M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

CSW-2021  2021.5.13 

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Event date： 2021.4

Language：English   Presentation type：Oral presentation (invited, special)  

AlGaNホモ接合トンネルジャンクション深紫外LEDの低電圧駆動

永田 賢吾, 牧野 浩明, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

第68回応用物理学会春季学術講演会  2021.3.16 

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Event date： 2021.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催   Country：Japan  

高温スパッタリングにより成膜したMgZnO透明電極材料の電気的及び光学的特性

松原 太一 , 久志本 真希 , 渡邉 浩崇, 古澤 優太, 新田 州吾, 本田 善央, 天野 浩

第68回応用物理学会春季学術講演会  2021.3.18 

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Event date： 2021.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン開催   Country：Japan  

Development of UV-C laser diodes on AlN substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

SPIE PHOTONICS WEST  2021.3.6 

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Event date： 2021.3

Language：English   Presentation type：Oral presentation (invited, special)  

Electrical and Optical Characteristics of Al-doped MgZnO Deposited by RF Magnetron Cosputtering International conference

Taichi Matsubara, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 8th Asian Conference on Crystal Growth and Crystal Technology  2021.3.1 

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Event date： 2021.3

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Electrically injected AlGaN based deep-ultraviolet laser diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

IPC 2020  2020.9.28 

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Event date： 2020.10

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Canada  

GaN-on-GaN Vertical Nanowire Power Schottky Barrier Diode Fabricated by Top-down Approach International conference

Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

ISPSD 2020  2020.9.17 

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Event date： 2020.9

Language：English   Presentation type：Poster presentation  

Country：Austria  

Demonstration of a deep-ultraviolet laser diode on single crystal AlN substrate operating under current injection at room temperature Invited

Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo.J. Schowalter, Chiaki Sasaoka, Hiroshi Amano

第81回応用物理学会秋季学術講演会  2020.9.9 

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Event date： 2020.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン開催   Country：Japan  

AlGaN 系深紫外光デバイスの開発 -レーザーダイオードと透明導電膜 - Invited

久志本 真希, 出来 真斗, 本田 善央, 天野 浩

第81回応用物理学会秋季学術講演会  2020.9.10 

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Event date： 2020.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン開催   Country：Japan  

次世代深紫外光源に向けた透明導電膜と UV−C LD Invited

久志本 真希

第12回ナノ構造・エピタキシャル成長講演会  2020.7.31 

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Event date： 2020.7

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン開催   Country：Japan  

272 nm deep-ultraviolet laser diode fabricated on high-quality AlN substrate Invited International conference

C. Sasaoka, Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, and H. Amano

ALPS 2020  2020.4.22 

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Event date： 2020.4

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Japan  

表面積制御によるマイクロプレート型多色発光LEDの同時成長

蔡　文トウ, 久志本 真希, 出来 真斗，田中 敦之，新田 州吾，本田 善央，天野 浩

第67回応用物理学会春季学術講演会 

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Event date： 2020.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：上智大学四谷キャンパス   Country：Japan  

ALD 法によりDBR を形成されたAlGaN UVC LD の室温パルス発振

酒井 忠慶, 久志本 真希, 張 梓懿, 杉山 直治, 本田 善央, 笹岡 千秋, 天野 浩

第67回応用物理学会春季学術講演会 

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Event date： 2020.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：上智大学四谷キャンパス   Country：Japan  

GaN 縦型p-n ダイオードにおける2 光子吸収光電流の測定

川崎晟也，安藤悠人，田中敦之，塚越真悠子，谷川智之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第67回応用物理学会春季学術講演会 

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Event date： 2020.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：上智大学四谷キャンパス   Country：Japan  

p-GaN エピ層中に Si イオン注入により形成した n-GaN の電気特性評価

三浦史也、安藤 悠人，高橋 昌大，出来 真斗, 田中 敦之，渡邉 浩崇，久志本 真希，新田 州吾，本田 善央，天野 浩

先進パワー半導体分科会第6回講演会 

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Event date： 2019.12

Language：Japanese   Presentation type：Poster presentation  

Venue：広島国際会議場   Country：Japan  

ゲート電極形成プロセスがAl2O3/GaN界面およびチャネル特性に与える影響

安藤悠人、中村徹、出来真斗、田岡紀之、田中敦之、渡邉浩崇、久志本真希、新田州吾、本田善央、山田永、清水三聡、天野浩

先進パワー半導体分科会第6回講演会 

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Event date： 2019.12

Language：Japanese   Presentation type：Poster presentation  

Venue：広島国際会議場   Country：Japan  

Crystal structure of MgZnO deposited by RF sputtering International conference

Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019) 

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Event date： 2019.11

Language：English   Presentation type：Poster presentation  

Venue：Okinawa, Japan   Country：Japan  

Photoelectrochemical Etching for GaN MEMS

Takehiro Yamada, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

EMS-38 

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Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：THE KASHIHARA(奈良県橿原市）   Country：Japan  

Effect of interface state density on channel mobility in GaN lateral MISFET International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hisashi Yamada, Mitsuaki Shimizu, and Hiroshi Amano

SemiconNano 2019 

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Event date： 2019.9

Language：English   Presentation type：Poster presentation  

Venue：Kobe, Japan   Country：Japan  

GaN横型MISFETにおけるチャネル移動度に対する界面準位密度の影響2

安藤 悠人,中村 徹, 出来 真斗, 田岡 紀之1, 田中 敦之, 渡邉 浩崇 久志本 真希, 新田 州吾, 本田 善央, 山田 永, 清水 三聡, 天野 浩

応用物理学会秋季学術講演会 

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Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：北海道大学   Country：Japan  

GaNパワーデバイスの実用化に向けた準備状況について

田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩

応用物理学会秋季学術講演会 

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Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：北海道大学   Country：Japan  

GaNへの高温Mg/Fイオン共注入によるグリーンルミネッセンスの抑制

高橋 昌大，田中 敦之，安藤 悠人，渡邉 浩崇，出来 真斗，久志本 真希，新田 州吾，本田 善央，Kevin J. Chen，天野 浩

応用物理学会秋季学術講演会 

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Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：北海道大学   Country：Japan  

エッチング法を用いたAlGaN UV-C レーザーの光共振器作製

酒井 忠慶, 久志本 真希, 本田 善央, 天野 浩

応用物理学会秋季学術講演会 

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Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：北海道大学   Country：Japan  

Effects of annealing process on electrical conductivity of MgZnO International conference

Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

The international workshop on UV materials and devices (IWUMD-2019) 

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Event date： 2019.9

Language：English   Presentation type：Oral presentation (general)  

Venue：St. Petersburg, Russia  

High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication International conference

Seiya Kawasaki, Hayata Fukushima, Shigeyosihi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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Event date： 2019.9

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya, Japan   Country：Japan  

Effect of Post-metallization Annealing on Interface Properties of Al2O4/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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Event date： 2019.9

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya, Japan   Country：Japan  

Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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Event date： 2019.9

Language：English   Presentation type：Poster presentation  

Venue：Nagoya, Japan   Country：Japan  

Interface properties of lateral MISFETs fabricated on m- and c-plane International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Shigeyoshi Usami, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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Event date： 2019.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Washington DC, USA   Country：United States  

Fabrication of GaN-on-GaN Vertical Nanowire Schottky Barrier Diode by Top-down Approach International conference

Yaqiang Liao, Jia Wang, Yuto Ando, Xu Yang, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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Event date： 2019.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Washington DC, USA   Country：United States  

Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature International conference

M. Takahashi, A. Tanaka, S. Usami, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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Event date： 2019.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Washington DC, USA   Country：United States  

GaN 基板上横型MIS FET における移動度の面方位依存性

安藤 悠人, 中村 徹, 出来 真斗, 渡邉 浩崇, 田中 敦之, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

第11回 ナノ構造・エピタキシャル成長講演会 

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Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：広島大学　 東広島キャンパス 学士会館レセプションホール   Country：Japan  

Two-dimensional h-BN multilayer grown on AlN by metalorganic vapor phase epitaxy International conference

Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

The 4th International Conference on Physics of 2D Crystals (ICP2DC4) 

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Event date： 2019.6

Language：English   Presentation type：Oral presentation (general)  

Venue：Hangzhou, China   Country：China  

Mg composition control of co-sputtered MgZnO thin films toward the application of deep-UV transparent electrode International conference

Tadayoshi Sakai, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 7th International Conference on Light-Emitting Devices and Their Industrial Applications 

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Event date： 2019.4

Language：English   Presentation type：Poster presentation  

Venue：Yokohama, Japan   Country：Japan  

RFスパッタ法を用いたMgZnOの熱処理効果

久志本真希，酒井 忠慶、出来 真斗、本田 善央、天野 浩

第66回　応用物理学会春季学術講演会 

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Event date： 2019.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東京工業大学大岡山キャンパス   Country：Japan  

飛行時間型質量分析法を用いたトリメチルアルミニウムとアンモニアの気相反応分析

大山　武浩、叶　正、久志本　真希、新田　州吾、本田　善央、天野　浩大山　武浩、叶　正、久志本　真希、新田　州吾、本田　善央、天野　浩

第66回　応用物理学会春季学術講演会 

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Event date： 2019.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東京工業大学大岡山キャンパス   Country：Japan  

深紫外透明電極応用に向けたMgZnO 薄膜の吸収端制御

酒井 忠慶, 久志本 真希, 出来 真斗, 本田 善央, 天野 浩

第66回　応用物理学会春季学術講演会 

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Event date： 2019.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東京工業大学大岡山キャンパス   Country：Japan  

Optical properties of AlGaN based UVC laser structures on annealed AlN template Invited International conference

Maki Kushimoto, Yang Xu, Yuhuai Liu, Yoshio Honda, and Hiroshi Amano

The international workshop on UV materials and devices (IWUMD-2018) 

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Event date： 2018.12

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Kunming City, Yunnan, China   Country：Japan  

RF スパッタ法を用いた紫外透過 MgZnO 透明導電膜の作製 Invited

久志本真希，酒井忠慶、古澤優太、出来真斗、本田善央、天野浩

日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム 

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Event date： 2018.9

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学   Country：Japan  

深紫外透明電極応用に向けたMgZnO薄膜の組成制御

酒井忠慶、久志本真希、出来真斗、本田善央, 天野浩

日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム 

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Event date： 2018.9

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学   Country：Japan  

GaN中転位の三次元観察と転位がパワーデバイスに与える影響 Invited

田中敦之, 宇佐美茂佳, 安藤悠人,　永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩

第65回応用物理学会春季学術講演会 

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Event date： 2018.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：早稲田大学, 東京   Country：Japan  

GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電気特性に与える影響 Invited

出来真斗、曾根和詩、永松謙太郎、田中敦之、久志本真希、新田州吾、本田善央、天野浩

第65回応用物理学会春季学術講演会 

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Event date： 2018.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：早稲田大学, 東京   Country：Japan  

Mesa depth dependence of breakdown voltage of GaN pn diode International conference

Hayata Fukushima, Yuto Ando, Shigeyoshi Usami, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ISPlasma2018 

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Event date： 2018.3

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya, Japan   Country：Japan  

Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by lasma assisted molecular beam epitaxy International conference

Tasuya Hattori,Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano

ISPlasma2018 

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Event date： 2018.3

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya, Japan   Country：Japan  

Development of Sustainable Smart Society by Transformative Electronics Invited International conference

M. Ogura, Y. Ando, S. Usami, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Kawai, S. Yagi, H. Amano

2017 IEEE International Electron Devices Meeting (IEDM 2017) 

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Event date： 2017.12

Language：English   Presentation type：Oral presentation (invited, special)  

Venue： Las Vegas, Nevada, USA   Country：United States  

-c面GaN基板上のGaNのMOVPE成長における酸素低減の研究

河野　司, 久志本真希, 永松謙太郎, 新田州吾, 本田善央, 天野　浩

電子情報通信学会 電子デバイス研究会 

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Event date： 2017.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：名古屋工業大学   Country：Japan  

In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices Invited International conference

S. Nitta, Z. Liu, S. Usami, Z. Ye, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek, and H. Amano

Optics 2017 / 8th International Conference and Exhibition on Lasers, Optics & Photonics 

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Event date： 2017.11

Language：English   Presentation type：Oral presentation (invited, special)  

Venue： Las Vegas, Nevada, USA   Country：United States  

Interface state density and dielectric breakdown electric fields of MOS capacitors using several off-cut m-plane GaN substrates

M. Deki, K. Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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Event date： 2017.11

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by molecular beam epitaxy

T. Hattori, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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Event date： 2017.11

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

"Correlation between dislocation and leakage current of p-n diodes on free-standing GaN substrate

S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Hond and H. Amano

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Event date： 2017.11

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off- angled m-plane GaN substrate

A.Tanaka, Y. Ando, O. Barry, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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Event date： 2017.11

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

異なるGaN ⾃⽴基板上縦型PN ダイオードのキラー転位解析

宇佐美 茂佳、福島 颯太、安藤 悠⼈、⽥中 敦之、永松 謙太郎、久志本 真希、出来 真⽃、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

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Event date： 2017.10

Language：Japanese   Presentation type：Poster presentation  

Venue：ロワジールホテル豊橋   Country：Japan  

GaN パワーデバイスの周辺耐圧構造の検討

福島 颯太、安藤 悠⼈、宇佐美 茂佳、⽥中 敦之、永松 謙太郎、出来 真⽃、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

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Event date： 2017.10

Language：Japanese   Presentation type：Poster presentation  

Venue：ロワジールホテル豊橋   Country：Japan  

オフ⽅向の異なるホモエピタキシャルm ⾯ショットキーバリアダイオードの作製

安藤 悠⼈、永松 謙太郎、⽥中 敦之、宇佐美 茂佳、出来 真⽃、Barry Ousmane、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

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Event date： 2017.10

Language：Japanese   Presentation type：Poster presentation  

Venue：ロワジールホテル豊橋   Country：Japan  

Semipolar InGaN optical devices on patterned Si substrates Invited International conference

Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda and Hiroshi Amano

The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

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Event date： 2017.10

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Banff, Alberta, Canada   Country：Canada  

Evaluation of internal quantum efficiency of LED by photocurrent measurement Invited International conference

Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano

The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

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Event date： 2017.10

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Banff, Alberta, Canada   Country：Canada  

Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society International conference

"S. Usami, Z. Ye, X. Yang, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Amano

International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

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Event date： 2017.9

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Kyoto, Japan   Country：Japan  

Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

M. Deki, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

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Event date： 2017.9

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya, Japan   Country：Japan  

Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes International conference

"M. Deki, Y. Ando, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

10th International Workshop on Bulk Nitride Semiconductors 

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Event date： 2017.9

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Finland  

転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析

宇佐美 茂佳、福島 颯太、安藤 悠人、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

第78回応用物理学会　秋季学術講演会 

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Event date： 2017.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：福岡国際会議場   Country：Japan  

The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy

Zhibin Liu、Shugo Nitta、Shigeyoshi Usami、Kentaro Nagamatsu、Maki Kushimoto、Manato Deki、Yoshio Honda、Hiroshi Amano

第78回応用物理学会　秋季学術講演会 

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Event date： 2017.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：福岡国際会議場   Country：Japan  

オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD

安藤 悠人、永松 謙太郎、田中 敦之、宇佐美 茂佳、バリー ウスマン1、出来 真斗、久志本 真希、新田 州吾、本田 善央、天野 浩

第78回応用物理学会　秋季学術講演会 

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Event date： 2017.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：福岡国際会議場   Country：Japan  

Development of Sustainable Smart Society via Transformative Electronics International conference

H. Amano, Y. Robin, S. Y. Bae, K. Nagamatsu, M. Kushimoto, M. Deki, T. Nishitani, D. Sato, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek

The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017) 

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Event date： 2017.8

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Kyoto, Japan   Country：Japan  

Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

Manato Deki, Kazushi Sone, Junya Matsushita, Kentarou Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

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Event date： 2017.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Strasburg,France   Country：France  

Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate International conference

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

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Event date： 2017.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Strasburg,France   Country：France  

Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching International conference

Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano

ICNS-12 

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Event date： 2017.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Strasburg,France   Country：France  

m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate International conference

Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

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Event date： 2017.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Strasburg,France   Country：France  

異なるInGaN膜厚の(1-101)GaN基板上太陽電池の作製

久志本真希、宇佐美茂佳、出来真斗、本田善央、天野浩

第9回ナノ構造・エピタキシャル成長講演会 

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Event date： 2017.7

Language：Japanese   Presentation type：Poster presentation  

Venue：北海道大学   Country：Japan  

成長法の異なるGaN自立基板上PNダイオードのキラー転位解析

宇佐美茂佳,安藤悠人、福島颯太、田中敦之、永松謙太郎、出来真斗、久志本真希、新田州吾、本田善央、天野浩

第9回ナノ構造・エピタキシャル成長講演会 

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Event date： 2017.7

Language：Japanese   Presentation type：Poster presentation  

Venue：北海道大学   Country：Japan  

m 面GaN 基板上 厚膜GaN-SBD の逆方向リーク電流

安藤悠人, 永松謙太郎, 田中敦之, 宇佐美茂佳, 出来真斗,　久志本真希, 新田州吾, 本田善央, 天野浩

第9回ナノ構造・エピタキシャル成長講演会 

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Event date： 2017.7

Language：Japanese   Presentation type：Poster presentation  

Venue：北海道大学   Country：Japan  

Growth of III-Nitride Nanorods for Future Optoelectronics Applications International conference

Hiroshi Amano, Tatsuya Hattori, Yoann Robin, Kaddour Lekhal, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Yasuhisa Ushida, Geoffrey Avit, Agnès Trassoudaine

18th International Conference on Light-Matter Coupling in Nanostructures (PLMCN18)  

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Event date： 2017.7

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Germany  

GaN自立基板上PNダイオードの逆方向リークと転位の関係

宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

第64回応用物理学会春季学術講演会 

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Event date： 2017.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：パシフィコ横浜(神奈川県横浜市)   Country：Japan  

O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

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Event date： 2017.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：パシフィコ横浜(神奈川県横浜市)   Country：Japan  

2次元正孔ガスを用いたコレクタトップ縦型GaNHBTの作製

安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

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Event date： 2017.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：パシフィコ横浜(神奈川県横浜市)   Country：Japan  

Si基板上半極性(1-101)GaNストライプレーザー端面への反射膜作製

鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

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Event date： 2017.3

Language：Japanese   Presentation type：Poster presentation  

Venue：パシフィコ横浜(神奈川県横浜市)   Country：Japan  

絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

第64回応用物理学会春季学術講演会 

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Event date： 2017.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：パシフィコ横浜(神奈川県横浜市)   Country：Japan  

窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

松下 淳矢，永松 謙太郎 ，Xu Yang，田中 敦之，久志本 真希，出来 真斗，新田 州吾，本田 善央，天野 浩

先進パワー半導体分科会 第４回講演会 

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Event date： 2016.11

Language：Japanese   Presentation type：Poster presentation  

Venue：つくば国際会議場(茨城県つくば市)   Country：Japan  

二次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

先進パワー半導体分科会 第４回講演会 

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Event date： 2016.11

Language：Japanese   Presentation type：Poster presentation  

Venue：つくば国際会議場(茨城県つくば市)   Country：Japan  

Facet Distribution of Leakage Current and Carrier Concentration in m-Plane GaN Schottky Barrier Diode Fabricated with MOVPE International conference

A. Tanaka, O. 1 Barry, K. Ngamatsu, J. Matsushita, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

International Workshop on Nitride Semiconductors 2016(IWN2016) 

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Event date： 2016.10

Language：English   Presentation type：Poster presentation  

Country：Japan  

Semipolar lasers on structured Si-Subtrates Invited International conference

Maki Kushimoto

Heimbach workshop2016 

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Event date： 2016.9

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Germany  

窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

松下 淳矢，永松 謙太郎 ，Xu Yang，田中 敦之，久志本 真希，出来 真斗，新田 州吾，本田 善央，天野 浩

第77回応用物理学会秋季学術講演会 

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Event date： 2016.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：朱鷺メッセ(新潟県新潟市)   Country：Japan  

InGaN成長中のInウェッティングレイヤーのレーザー散乱による観察

山本 哲也,永松 謙太郎,久志本真希,出来真斗,新田 州吾,本田 善央,天野 浩

第77回応用物理学会秋季学術講演会 

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Event date： 2016.9

Language：Japanese   Presentation type：Poster presentation  

Venue：朱鷺メッセ(新潟県新潟市)   Country：Japan  

GaN 自立基板上PIN ダイオードにおける順方向発光パターン解析

宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

第77回応用物理学会秋季学術講演会 

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Event date： 2016.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：朱鷺メッセ(新潟県新潟市)   Country：Japan  

InGaN surface roughness recovery by hydrogen treatment as monitored by in situ laser scattering International conference

Tetsuya Yamamoto, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) 

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Event date： 2016.8

Language：English   Presentation type：Oral presentation (general)  

Venue：Nagoya,Japan   Country：Japan  

Si(001)基板上(1-101)高In 組成InGaN における積層欠陥の形成

久志本真希、本田善央、天野浩

第35 回電子材料シンポジウム 

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Event date： 2016.7

Language：Japanese   Presentation type：Poster presentation  

Venue：ラフォーレ琵琶湖   Country：Japan  

Si基板上(1-101)高In組成InGaN結晶の緩和過程

久志本真希、本田善央、天野浩

第8回窒化物半導体結晶成長講演会 

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Event date： 2016.5

Language：Japanese   Presentation type：Poster presentation  

Venue：京都大学   Country：Japan  

Growth and characterization of semipolar (1-101)high-indium-content quantum wells on Si(001) International conference

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

The 6th International Symposium on Growth of III-Nitrides 

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Event date： 2015.11

Language：English   Presentation type：Poster presentation  

Venue：Hamamatsu, Japan   Country：Japan  

Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate International conference

Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

The 3th International Conference on Light-Emitting Devices and Their Industrial Applications 

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Event date： 2015.4

Language：English   Presentation type：Oral presentation (general)  

Venue：Yokohama,Japan   Country：Japan  

Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001) International conference

T.Mitsunari, T. Yamamoto, M. Kato, A. Tamura, S. Usami, M. Kushimoto, K. Yamashita, Y. Honda, Y. Lacroix, and H. Amano

10th International Symposium on Semiconductor Light Emitting Devices 

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Event date： 2014.12

Language：English   Presentation type：Oral presentation (general)  

Venue：Kaohsiung,Taiwan   Country：Japan  

Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate International conference

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

International Workshop on Nitride Semiconductors 2014(IWN2014) 

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Event date： 2014.8

Language：English   Presentation type：Poster presentation  

Venue：Wroclaw, Poland   Country：Poland  

Growth of (1-101)InGaN stripes on patterned (001)Si substrate International conference

Yasukazu Sone, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

The 15th IUMRS-International Congerence in Asia 

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Event date： 2014.8

Language：English   Presentation type：Poster presentation  

Venue：Fukuoka,Japan   Country：Japan  

Growth optimization of green InGaN multi-quantum well International conference

"T.Mitsunari1, A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacroix3, and H. Amano1,2

Conference on LED and Its Industrial Application '14 

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Event date： 2014.4

Language：English   Presentation type：Oral presentation (general)  

Venue：Yokohama,Japan   Country：Japan  

Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

10th International Conference on Nitride Semiconductors(ICNS-10) 

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Event date： 2013.8

Language：English   Presentation type：Oral presentation (general)  

Venue：Washington DC, USA   Country：United States  

Optical properties of semipolar (1-101) InGaN/GaN multiple quantum well with cavity structure on patterned Si substrae International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures(EDISON18) 

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Event date： 2013.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Matsue, Japan   Country：Japan  

Optical polarization properties in semipolar (1-101) InGaN/GaN multiple quantum well on a patterned Si Substrate International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

International Workshop on Nitride Semiconductors 2012(IWN2012) 

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Event date： 2012.10

Language：English   Presentation type：Oral presentation (general)  

Venue：Sapporo, Japan   Country：Japan  

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN International conference

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

International Workshop on Nitride Semiconductors 2012(IWN2012) 

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Event date： 2012.10

Language：English   Presentation type：Poster presentation  

Venue：Sapporo, Japan   Country：Japan  

Reduction of dislocations and residual stress in GaN grown on patterned Si substrate International conference

T. Tanikawa, T. Mitsunari, M. Kushimoto, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

11th Akasaki Research Center Symposium 

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Event date： 2011.11

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Japan  

AlN基板上UV-C LDのプロセス起因劣化 Invited

笹岡千秋、久志本真希、張梓懿、天野浩

日本学術振興会「結晶加工と評価技術」第145 委員会　第172 回研究会  2021.10.1 

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Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン開催  

世界最短波長深紫外半導体レーザー Invited

久志本 真希

TRiSTAR第１期奥村フェロー主催研究セミナー  2023.5.12 

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Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン  

第3回 光材料・応用技術研究会 Invited

久志本 真希

第3回 光材料・応用技術研究会   2023.11.10 

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Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：グランドエクシブ鳥羽/オンライン