Presentations -
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Sb2Te3/GeTe超格子膜からなるTRAMにおけるGeTe配列とスイッチング動作 International conference
大柳孝純, 北村匡史, 加藤重徳, 洗平昌晃, 高浦則克, 白石賢二, 田井光春, 木下勝治, 森川貴博, 秋田憲二
2014年電気化学秋季大会 2014.9.27
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Non-Equilibrium First-Principles Study on Electron Scattering Processes in MTJ
Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi
2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2014.11.30
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Non-Equilibrium First-Principles Study on Electron Scattering Processes in Magnetic Tunnel Junction
M. Araidai, T. Yamamoto, K. Shiraishi
AVS 62nd International Symposium & Exhibition (AVS-62) 2015.10.18
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MONOS型メモリにおける絶縁膜中の原子欠陥に関する第一原理計算 International conference
白川裕規, 洗平昌晃, 神谷克政, 白石賢二
2015年 第62回応用物理学会春季学術講演会 2015.3.11
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MONOSメモリにおけるSiO<sub>2</sub>膜中の窒素原子に起因する原子欠陥の理論的考察 International conference
白川裕規, 洗平昌晃, 神谷克政, 白石賢二
電子デバイス界面テクノロジー研究会（第21回） 2016.1.22
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The electric field effect and the dependence of nanoribbon width in monolayer nanoribbons of IV group materials International conference
Hattori Ayami, Yada Keiji, Araidai Masaaki, Tanaka Yukio
The Physical Society of Japan 2018.9.9
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Edge magnetization and an electric field effect in monolayer nanoribbons of IV group materials International conference
Hattori Ayami, Araidai Masaaki, Tanaka Yukio
The Physical Society of Japan 2018.3.22
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Control of Chemical Reaction between Ag Thin Film and Group-IV Semiconductors International conference
Ito Koichi, Akio Ohta, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
The Surface Science Society of Japan 2016.11.29
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GeSbTe相変化メモリ素子の電気伝導特性におけるスピン軌道相互作用の効果 International conference
洗平昌晃, 加藤重徳, 山本貴博, 白石賢二
日本物理学会 第69回年次大会 2014.3.27
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GaN結晶成長メカニズムの熱力学解析 International conference
関口一樹, 白川裕規, 山本芳裕, 洗平昌晃, 白石賢二
第63回応用物理学会春季学術講演会 2016.3.19
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Multi-Physics Simulation of GaN MOVPE Growth International conference
2017.11.9
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Theoretical Calculations of Franck-Condon Blockade Phenomena International conference
Araidai M, Tsukada M
The Physical Society of Japan 2012.9.26
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First-principles study on two-dimensional crystals of group IV element on insulating film
M. Araidai, M. Kurosawa, A. Ohta, K. Shiraishi
23rd International Colloquium on Scanning Probe Microscopy (ICSPM23) 2015.12.10
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First-Principles Study on Hydrogen Annealing Effect in Si/SiO<sub>2</sub> Interface by Thermal Oxidation
S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, K. Shiraishi
2015 International Conference on Solid State Devices and Materials 2015.9.27
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First-Principles Study on Current-Induced Magnetization Switching in Magnetic Tunnel Junctions
Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi
IVC-19/ICSS-15 and ICN+T 2013 2013.9.9
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First principles study on switching mechanism of superlattice(GeTe)<sub>2</sub>/Sb<sub>2</sub>Te<sub>3</sub> phase change memory
M. Takato, H. Shirakawa, M. Araidai, K. Shiraishi
AVS 62nd International Symposium & Exhibition (AVS-62) 2015.10.18
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First principles examination of the switching mechanism of the phase change memory (TRAM) using superlattice GeTe/Sb<sub>2</sub>Te<sub>3</sub>
M. Takato, H. Shirakawa, M. Araidai, K. Shiraishi
46th Semiconductor Interface Specialists Conference (SISC2015) 2015.12.2
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First principal calculation of electronic properties on 4H-AlN/4H-SiC(11-20) and 4H-SiC-4H-AlN(0001) interfaces
K. Endo, H. Shirakawa, M. Araidai, K. Shiraishi
16th International Conference on Silicon Carbide and Related Materials 2015.10.4
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Evaluation of Energy Band Structure of Si<sub>1-x</sub>Sn<sub>x</sub> by Density Functional Theory Calculation and Photoelectron Spectroscopy
Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima
2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (IWDTF) 2015.11.2
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
T. Ohyanagi, N. Takaura, M. Tai, M. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
2013 IEEE International Electron Devices Meeting 2013.12.9