Presentations -
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V-MOSFETにおけるSi/SiO<sub>2</sub>(001)界面における熱酸化過程、水素アニール効果の歪み依存性の第一原理計算による考察 International conference
川内伸悟, 白川裕規, 洗平昌晃, 影島博之, 遠藤哲郎, 白石賢二
第63回応用物理学会春季学術講演会 2016.3.19
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First principal calculation of electronic properties on 4H-AlN/4H-SiC(11-20) and 4H-SiC-4H-AlN(0001) interfaces
K. Endo, H. Shirakawa, M. Araidai, K. Shiraishi
16th International Conference on Silicon Carbide and Related Materials 2015.10.4
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Evaluation of Energy Band Structure of Si<sub>1-x</sub>Sn<sub>x</sub> by Density Functional Theory Calculation and Photoelectron Spectroscopy
Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima
2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (IWDTF) 2015.11.2
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
T. Ohyanagi, N. Takaura, M. Tai, M. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
2013 IEEE International Electron Devices Meeting 2013.12.9
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Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications
N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
2013 Symposia on VLSI Technology and Circuits 2013.6.11
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Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method
A. Ohta, M. Kurosawa, M. Araidai, S. Miyazaki
8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016/IC-PLANTS2016) 2016.3.6
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Two-dimensional structure of Ge atoms segregated on Ag(111) International conference
Shimazu Hiroki, Yuhara Junji, Nakatake Masashi, Ito Kouichi, Ohta Akio, Araidai Masaaki, Kurosawa Masashi
The Physical Society of Japan 2018.9.9
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Ag 誘起層交換成長法によるSi 極薄膜の形成 International conference
黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明
日本表面科学会第35回表面科学学術講演会 2015.12.1
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Ab initio study on the atomic behavior of N, H atoms and O vacancy related defects in SiO<sub>2</sub> layer of MONOS memories
H. Shirakawa, M. Araidai, K. Kamiya, K. Shiraishi
AVS 62nd International Symposium & Exhibition (AVS-62) 2015.10.18
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30aPS-15 Ab-Initio Calculations of Field Emission from Carbon Nanostructures International conference
Araidai Masaaki, Souma Satofumi, Watanabe Kazuyuki
The Physical Society of Japan 2006 Meeting Abstracts of the Physical Society of Japan
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27pPSA-4 Field Emission Mechanism of Nanostructures International conference
Araidai M, Nakamura Y, Watanabe K
The Physical Society of Japan 2004 Meeting Abstracts of the Physical Society of Japan
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25pPSB-7 Ab Initio Calculation of Force on Tip Atoms under Field Emission International conference
Araidai M, Watanabe K
The Physical Society of Japan 2006 Meeting Abstracts of the Physical Society of Japan
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Effect of hydrogen defects on field emission of diamond surfaces International conference
Araidai Masaaki, Watanabe Kazuyuki
The Physical Society of Japan 2003 Meeting Abstracts of the Physical Society of Japan
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21aPS-28 First-Principles Analysis of Field Emission by TD-DFT and RTM International conference
Araidai Masaaki, Souma Satofumi, Watanabe Kazuyuki
The Physical Society of Japan 2005 Meeting Abstracts of the Physical Society of Japan
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20aPS-9 Ab Initio Calculation of Force on Tip Atoms under Field Emission II International conference
Araidai M, Watanabe K
The Physical Society of Japan 2007 Meeting Abstracts of the Physical Society of Japan
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15aPS-5 Time-dependent density-functional calculation of photoabsorption spectra of carbon nanostructure International conference
Noguchi T, Nakaoka N, Araidai M, Watanabe K
The Physical Society of Japan 2004 Meeting Abstracts of the Physical Society of Japan
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First principles examination of the switching mechanism of the phase change memory (TRAM) using superlattice GeTe/Sb<sub>2</sub>Te<sub>3</sub>
M. Takato, H. Shirakawa, M. Araidai, K. Shiraishi
46th Semiconductor Interface Specialists Conference (SISC2015) 2015.12.2
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超格子GeTe/Sb2Te3を用いた相変化メモリのスイッチングメカニズムに関する第一原理計算 International conference
高戸真之, 白川裕規, 洗平昌晃, 白石賢二
日本物理学会 第70回年次大会(2015年) 2015.3.21
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絶縁膜上のIV 族系二次元結晶に関する第一原理計算 International conference
洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二
日本表面科学会第35回表面科学学術講演会 2015.12.1
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First-principles study on two-dimensional crystals of group IV material on insulating film International conference
Araidai M, Kurosawa M, Ohta A, Shiraishi K
The Physical Society of Japan 2016.3.19